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micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. july 2011 rev 2 1/153 n25q032 32-mbit 3 v, multiple i/o, 4-kbyte subsector erase, xip enabled, serial flash memory with 108 mhz spi bus interface features ? spi-compatible serial bus interface ? 108 mhz (maximum) clock frequency ? 2.7 v to 3.6 v single supply voltage ? supports legacy spi protocol and new quad i/o or dual i/o spi protocol ? quad/dual i/o instructio ns resulting in an equivalent clock frequency up to 432 mhz: ? xip mode for all three protocols ? configurable via volatile or non-volatile registers ( enabling the memory to work in xip mode directly after power on ) ? program/erase suspend instructions ? continuous read of entire memory via single instruction: ?fast read ? quad or dual output fast read ? quad or dual i/o fast read ? flexible to fit application: ? configurable numb er of dummy cycles ? output buffer configurable ? reset function available upon customer request ? 64-byte user-lockable, one-time programmable (otp) area ? erase capability ? subsector (4-kbyte) granularity on the entire memory array. ? sector (64-kbyte) granularity ? write protections ? software write protection applicable to every 64-kbyte sector (volatile lock bit) ? hardware write protection: protected area size defined by five non-volatile bits (bp0, bp1, bp2, and tb bit) ? additional smart protections available upon customer request ? electronic signature ? jedec standard two-byte signature (ba16h) ? additional 2 extended device id (edid) bytes to identify device factory options ? unique id code (uid) with 14 bytes read- only, factory programmed ? more than 100,000 program/erase cycles per sector ? more than 20 years data retention ? packages (all packages rohs compliant): ? f4 = ufdfpn8 4 x 3 mm (mlp8) ? f6 = vdfpn8 6 x 5 mm (mlp8) ? f8 = vdfpn8 8 x 6 mm (mlp8) ? sc = so8n (150 mils body width) ? se = so8w (208 mils body width) ? sf = so16 (300 mils body width) ? 12 = tbga24 6 x 8 mm
contents m25q032 - 3 v 2/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. contents 1 description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2 signal descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2.1 serial data output (dq1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2.2 serial data input (dq0) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2.3 serial clock (c) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2.4 chip select (s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2.5 hold (hold) or reset (reset) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 2.6 write protect/enhanced program supply voltage (w /vpp), dq2 . . . . . . . 16 2.7 v cc supply voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 2.8 v ss ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 3 spi modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 4 spi protocols . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 4.1 extended spi protocol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 4.2 dual i/o spi (dio-spi) protocol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 4.3 quad spi (qio-spi) protocol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 5 operating features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 5.1 extended spi protocol operating features . . . . . . . . . . . . . . . . . . . . . . . 22 5.1.1 read operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 5.1.2 page programming . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 5.1.3 dual input fast program . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 5.1.4 dual input extended fast program . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 5.1.5 quad input fast program . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 5.1.6 quad input extended fast pr ogram . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 5.1.7 subsector erase, sector erase and bulk erase . . . . . . . . . . . . . . . . . . . 23 5.1.8 polling during a write, pr ogram or erase cycle . . . . . . . . . . . . . . . . . . . . 23 5.1.9 active power and standby power modes . . . . . . . . . . . . . . . . . . . . . . . . 24 5.1.10 hold (or reset) cond ition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 5.2 dual spi (dio-spi) protocol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 5.2.1 multiple i/o read identification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
m25q032 - 3 v contents 3/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. 5.2.2 dual command fast reading . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 5.2.3 page programming . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 5.2.4 subsector erase, sector erase and bulk erase . . . . . . . . . . . . . . . . . . 27 5.2.5 polling during a wr ite, program or erase cycle . . . . . . . . . . . . . . . . . . . 27 5.2.6 read and modify registers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 5.2.7 active power and standby power modes . . . . . . . . . . . . . . . . . . . . . . . 27 5.2.8 hold (or reset) condition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 5.3 quad spi (qio-spi)protocol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 5.3.1 multiple i/o read identification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 5.3.2 quad command fast reading . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 5.3.3 quad command page programming . . . . . . . . . . . . . . . . . . . . . . . . . . 28 5.3.4 subsector erase, sector erase and bulk erase . . . . . . . . . . . . . . . . . . 29 5.3.5 polling during a wr ite, program or erase cycle . . . . . . . . . . . . . . . . . . . 29 5.3.6 read and modify registers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 5.3.7 active power and standby power modes . . . . . . . . . . . . . . . . . . . . . . . 30 5.3.8 hold (or reset) condition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 5.3.9 vpp pin enhanced supply voltage feature . . . . . . . . . . . . . . . . . . . . . . 30 6 volatile and non volatile registers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 6.1 legacy spi status register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 6.1.1 wip bit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 6.1.2 wel bit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 6.1.3 block protect bits (bp2, bp1, bp0) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 6.1.4 tb bit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 6.1.5 srwd bit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 6.2 non volatile configuration register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 6.2.1 dummy clock cycles nv configuration bits (nvcr bits from 15 to 12) . 36 6.2.2 xip nv configuration bits (nvcr bits from 11 to 9) . . . . . . . . . . . . . . . . 37 6.2.3 output driver strength nv configuratio n bits (nvcr bits from 8 to 6) . . 37 6.2.4 hold (reset) disable nv configuration bit (nvcr bit 4) . . . . . . . . . . . . 37 6.2.5 quad input nv configuration bit (nvcr bit 3) . . . . . . . . . . . . . . . . . . . . 37 6.2.6 dual input nv configuration bit (nvcr bit 2) . . . . . . . . . . . . . . . . . . . . . 37 6.3 volatile configuration register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38 6.3.1 dummy clock cycle: vcr bits 7:4 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39 6.3.2 xip volatile configuration bits (vcr bit 3) . . . . . . . . . . . . . . . . . . . . . . . 39 6.3.3 wrap: vcr bits 1:0 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39 6.4 volatile enhanced configuration register . . . . . . . . . . . . . . . . . . . . . . . . 39
contents m25q032 - 3 v 4/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. 6.4.1 quad input command vecr<7> . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 6.4.2 dual input command vecr<6> . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41 6.4.3 reset/hold disable vecr<4> . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41 6.4.4 accelerator pin enable: qio-spi pr otocol / qifp/qiefp vecr<3> . . . 41 6.4.5 output driver strength vecr<2:0> . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42 6.5 flag status register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42 6.5.1 p/e controller status bit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42 6.5.2 erase suspend status bit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43 6.5.3 erase status bit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43 6.5.4 program status bit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43 6.5.5 vpp status bit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 6.5.6 program suspend status bit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 6.5.7 protection status bit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 7 protection modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 7.1 spi protocol-related protections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 7.2 specific hardware and software protection . . . . . . . . . . . . . . . . . . . . . . . . 46 8 memory organization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48 9 instructions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52 9.1 extended spi instructions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52 9.1.1 read identification (rdid) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 9.1.2 read data bytes (read) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56 9.1.3 read data bytes at higher speed (fast_read) . . . . . . . . . . . . . . . . 57 9.1.4 read serial flash discovery parameter . . . . . . . . . . . . . . . . . . . . . . . . 58 9.1.5 dual output fast read (dofr) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59 9.1.6 dual i/o fast read . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 9.1.7 quad output fast read . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61 9.1.8 quad i/o fast read . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62 9.1.9 read otp (rotp) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63 9.1.10 write enable (wren) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64 9.1.11 write disable (wrdi) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64 9.1.12 page program (pp) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 9.1.13 dual input fast program (dif p) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 67 9.1.14 dual input extended fast program . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68 9.1.15 quad input fast program . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69
m25q032 - 3 v contents 5/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. 9.1.16 quad input extended fast program . . . . . . . . . . . . . . . . . . . . . . . . . . . 70 9.1.17 program otp instruction (potp) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 71 9.1.18 subsector erase (sse) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73 9.1.19 sector erase (se) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74 9.1.20 bulk erase (be) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75 9.1.21 program/erase suspend . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75 9.1.22 program/erase resume . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 78 9.1.23 read status register (rdsr) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 78 9.1.24 write status register (wrsr) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 78 9.1.25 read lock register (rdlr) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80 9.1.26 write to lock register (wrlr) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 81 9.1.27 read flag status register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 82 9.1.28 clear flag status register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 82 9.1.29 read nv configuration register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83 9.1.30 write nv configuration register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83 9.1.31 read volatile configuration register . . . . . . . . . . . . . . . . . . . . . . . . . . . 84 9.1.32 write volatile configuration register . . . . . . . . . . . . . . . . . . . . . . . . . . . 85 9.1.33 read volatile enhanced configuration re gister . . . . . . . . . . . . . . . . . . 85 9.1.34 write volatile enhanced configuration register . . . . . . . . . . . . . . . . . . 86 9.2 dio-spi instructions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 87 9.2.1 multiple i/o read identification protocol . . . . . . . . . . . . . . . . . . . . . . . . 89 9.2.2 read serial flash discovery parameter . . . . . . . . . . . . . . . . . . . . . . . . 89 9.2.3 dual command fast read (dcfr) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90 9.2.4 read otp (rotp) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 91 9.2.5 write enable (wren) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 91 9.2.6 write disable (wrdi) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 91 9.2.7 dual command page program (dcpp) . . . . . . . . . . . . . . . . . . . . . . . . 92 9.2.8 program otp instruction (potp) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 93 9.2.9 subsector erase (sse) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 94 9.2.10 sector erase (se) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 94 9.2.11 bulk erase (be) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95 9.2.12 program/erase suspend . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95 9.2.13 program/erase resume . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 96 9.2.14 read status register (rdsr) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 96 9.2.15 write status register (wrsr) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 97 9.2.16 read lock register (rdlr) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 97 9.2.17 write to lock register (wrlr) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 98
contents m25q032 - 3 v 6/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. 9.2.18 read flag status register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 98 9.2.19 clear flag status register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 99 9.2.20 read nv configuration register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 99 9.2.21 write nv configuration register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 9.2.22 read volatile configuration register . . . . . . . . . . . . . . . . . . . . . . . . . . 100 9.2.23 write volatile configuration register . . . . . . . . . . . . . . . . . . . . . . . . . . 101 9.2.24 read volatile enhanced configuration re gister . . . . . . . . . . . . . . . . . 101 9.2.25 write volatile enhanced configuration re gister . . . . . . . . . . . . . . . . . 102 9.3 qio-spi instructions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 103 9.3.1 multiple i/o read identification (miordid) . . . . . . . . . . . . . . . . . . . . . 105 9.3.2 read serial flash discovery parameter . . . . . . . . . . . . . . . . . . . . . . . 106 9.3.3 quad command fast read (qcfr) . . . . . . . . . . . . . . . . . . . . . . . . . . 106 9.3.4 read otp (rotp) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 108 9.3.5 write enable (wren) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 109 9.3.6 write disable (wrdi) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110 9.3.7 quad command page program (qcpp) . . . . . . . . . . . . . . . . . . . . . . . 110 9.3.8 program otp instruction (potp) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 112 9.3.9 subsector erase (sse) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 113 9.3.10 sector erase (se) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 113 9.3.11 bulk erase (be) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 114 9.3.12 program/erase suspend . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 114 9.3.13 program/erase resume . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115 9.3.14 read status register (rdsr) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 116 9.3.15 write status register (wrsr) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 117 9.3.16 read lock register (rdlr) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 117 9.3.17 write to lock register (wrlr) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 118 9.3.18 read flag status register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 119 9.3.19 clear flag status register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120 9.3.20 read nv configuration register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120 9.3.21 write nv configuration register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 121 9.3.22 read volatile configuration register . . . . . . . . . . . . . . . . . . . . . . . . . . 122 9.3.23 write volatile configuration register . . . . . . . . . . . . . . . . . . . . . . . . . . 123 9.3.24 read volatile enhanced configuration re gister . . . . . . . . . . . . . . . . . 124 9.3.25 write volatile enhanced configuration re gister . . . . . . . . . . . . . . . . . 125 10 xip operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 126 10.1 enter xip mode by setting the non vola tile configuration register . . . . 128
m25q032 - 3 v contents 7/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. 10.2 enter xip mode by setting the volatile configuration register . . . . . . . 129 10.3 xip mode hold and exit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130 10.4 xip memory reset after a controller reset . . . . . . . . . . . . . . . . . . . . . . . . 131 11 power-up and power-down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 132 11.1 rescue sequence in case of power loss during wrnvcr . . . . . . . . . . 133 12 initial delivery state . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 134 13 maximum rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 135 14 dc and ac parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 136 15 package mechanical . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 143 16 ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150 17 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 152
list of tables m25q032 - 3 v 8/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. list of tables table 1. signal names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 table 2. status register format . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 table 3. non-volatile configurat ion register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 table 4. maximum operative frequency by dummy clock cycles . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 table 5. volatile configuration register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38 table 6. sequence of bytes read during wrap mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39 table 7. volatile enhanced configuration register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 table 8. flag status register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42 table 9. software protection truth table (sectors 0 to 63 , 64 kbyte granularity) . . . . . . . . . . . . . . . 46 table 10. protected area sizes, upper (tb bi t = 0) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 7 table 11. protected area sizes, lower (tb bi t = 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 7 table 12. memory organization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49 table 13. instruction set: extended spi protocol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54 table 14. read identification data-out sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 5 table 15. extended device id table (first byte) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56 table 16. suspend parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 77 table 17. operations allowed / disallowed during device states . . . . . . . . . . . . . . . . . . . . . . . . . . . 77 table 18. protection modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80 table 19. lock register out . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 81 table 20. lock register in . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 82 table 21. instruction set: dio-spi protocol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 88 table 22. instruction set: qio-spi protocol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 104 table 23. nvcr xip bits setting example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 128 table 24. vcr xip bits setting example. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130 table 25. power-up timing and vwi threshold . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 133 table 26. absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 135 table 27. operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 136 table 28. ac measurement conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 136 table 29. capacitance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 136 table 30. dc characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 137 table 31. ac characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 138 table 32. reset conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140 table 33. ufdfpn8 (mlp8) ultra th in dual flat package, no lead, 43 mm dimensions . . . . . . 143 table 34. vdfpn8 (mlp8) very thin dual flat package no leads 65 mm dimensions . . . . . . . . 144 table 35. vdfpn8 (mlp8) very thin dual flat package 8 leads 86x1 mm dimensions . . . . . . . 145 table 36. so8 wide ? 8 lead plastic small outline, 2 08 mils body width, dimensions . . . . . . . . . 146 table 37. so16 wide ? 16 lead plastic small outline, 300 mils body width, dimensions . . . . . . . 147 table 38. tbga 6x8 mm 24-ball, dimensions, symbols a to ee . . . . . . . . . . . . . . . . . . . . . . . . . . . 149 table 39. tbga 6x8 mm 24-ball, dimensions, symbols fd to fff . . . . . . . . . . . . . . . . . . . . . . . . . . 149 table 40. so8n ? 8 lead plastic small outline, 150 m ils body width, dimensions . . . . . . . . . . . . 149 table 41. ordering information scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150 table 42. valid order information line items . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 151 table 43. document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 152
m25q032 - 3 v list of figures 9/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. list of figures figure 1. logic diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 figure 2. so8n, so8w and mlp8 connections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 figure 3. so16 connections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 figure 4. bga connections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 figure 5. bus master and memory devices on the spi bus . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 figure 6. spi modes supported . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 figure 7. hold condition activation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 figure 8. non volatile and vola tile configuration register scheme . . . . . . . . . . . . . . . . . . . . . . . . . 32 figure 9. block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48 figure 10. read identification instruction and data-out seque nce . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56 figure 11. read data bytes instruction and data-out sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57 figure 12. read data bytes at higher speed instruction and data-out sequence . . . . . . . . . . . . . . . 58 figure 13. read serial flash discovery sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59 figure 14. dual output fast read instruction sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 figure 15. dual i/o fast read instruction sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61 figure 16. quad output fast read instruction sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62 figure 17. quad input/ output fast read instruction sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62 figure 18. read otp instruction and data-out sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63 figure 19. write enable instruction sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64 figure 20. write disable instruction sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 figure 21. page program instruction sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 6 figure 22. dual input fast program instruction sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68 figure 23. dual input extended fast program instruction s equence . . . . . . . . . . . . . . . . . . . . . . . . . 69 figure 24. quad input fast program instruction sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70 figure 25. quad input extended fast program instruction s equence . . . . . . . . . . . . . . . . . . . . . . . . . 71 figure 26. program otp instruction sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72 figure 27. how to permanently lock the ot p bytes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73 figure 28. subsector erase instruction seq uence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 4 figure 29. sector erase instruction sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74 figure 30. bulk erase instruction sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75 figure 31. read status register instruction sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 78 figure 32. write status register instruction sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 79 figure 33. read lock register instruction and data-out seq uence . . . . . . . . . . . . . . . . . . . . . . . . . . . 81 figure 34. write to lock register instruction sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 82 figure 35. read flag status register inst ruction sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 82 figure 36. clear flag status register instruction sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83 figure 37. read nv configuration register instruction sequen ce . . . . . . . . . . . . . . . . . . . . . . . . . . . 83 figure 38. write nv configuration register instruction sequ ence. . . . . . . . . . . . . . . . . . . . . . . . . . . . 84 figure 39. read volatile config uration register instruction sequence . . . . . . . . . . . . . . . . . . . . . . . . 84 figure 40. write volatile conf iguration register instruction sequence . . . . . . . . . . . . . . . . . . . . . . . . 85 figure 41. read volatile enhanced configuration register instruction sequence. . . . . . . . . . . . . . . . 86 figure 42. write volatile enhanced configuration regist er instruction sequence. . . . . . . . . . . . . . . . 87 figure 43. multiple i/o read identifi cation instruction and data-out sequence dio-spi . . . . . . . . . . . 89 figure 44. dual read serial flash discovery parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90 figure 45. dual command fast read instruction and data- out sequence dio-spi . . . . . . . . . . . . . . 90 figure 46. read otp instruction and data-out sequence dio- spi . . . . . . . . . . . . . . . . . . . . . . . . . . . 91 figure 47. write enable instruction sequence dio-spi . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 91 figure 48. write disable instruction sequence dio-spi . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 92
list of figures m25q032 - 3 v 10/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. figure 49. dual command page program instruction seq uence dio-spi, 02h . . . . . . . . . . . . . . . . . 92 figure 50. dual command page program instruction seq uence dio-spi, a2h . . . . . . . . . . . . . . . . . 93 figure 51. dual command page program instruction seq uence dio-spi, d2h . . . . . . . . . . . . . . . . . 93 figure 52. program otp instruction sequence dio-spi . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 94 figure 53. subsector erase instruction sequence dio-spi . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 94 figure 54. sector erase instruction sequence dio-spi. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95 figure 55. bulk erase instruction sequence dio-spi . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95 figure 56. program/erase suspend instruction sequence dio- spi . . . . . . . . . . . . . . . . . . . . . . . . . . 96 figure 57. program/erase resume instruction sequence dio- spi . . . . . . . . . . . . . . . . . . . . . . . . . . . 96 figure 58. read status register instruction sequence dio-spi . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 97 figure 59. write status register instruction sequence dio-spi . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 97 figure 60. read lock register instruction and data-out se quence dio-spi. . . . . . . . . . . . . . . . . . . . 98 figure 61. write to lock register instruction sequence dio-spi . . . . . . . . . . . . . . . . . . . . . . . . . . . . 98 figure 62. read flag status register instruction sequence dio-spi . . . . . . . . . . . . . . . . . . . . . . . . . 99 figure 63. clear flag status register instruction sequence dio-spi . . . . . . . . . . . . . . . . . . . . . . . . . 99 figure 64. read nv configuration register instruction se quence dio-spi . . . . . . . . . . . . . . . . . . . 100 figure 65. write nv configuration register instruction sequence dio-spi . . . . . . . . . . . . . . . . . . . 100 figure 66. read volatile co nfiguration register instruction sequence dio-spi . . . . . . . . . . . . . . . . 101 figure 67. write volatile configurat ion register instruction sequence dio-spi . . . . . . . . . . . . . . . . 101 figure 68. read volatile enhanced configuration regi ster instruction sequence dio-spi . . . . . . . 102 figure 69. write volatile enhanced configuration re gister instruction sequence dio-spi . . . . . . . 102 figure 70. multiple i/o read identifi cation instruction and data-out sequence qio-spi . . . . . . . . . . 105 figure 71. quad read serial flash discovery parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 106 figure 72. quad command fast read instruction and data-out sequence qio-spi, 0bh . . . . . . . . 107 figure 73. quad command fast read instruction and data-out sequence qio-spi, 6bh . . . . . . . . 107 figure 74. quad command fast read instruction and data-out sequence qio-spi, ebh . . . . . . . . 108 figure 75. read otp instruction and data-out sequence qi o-spi . . . . . . . . . . . . . . . . . . . . . . . . . . 109 figure 76. write enable instruction sequence qio-spi. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 109 figure 77. write disable instruction sequence qio-spi . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110 figure 78. quad command page program instruction seq uence qio-spi, 02h. . . . . . . . . . . . . . . . 111 figure 79. quad command page program instruction seq uence qio-spi, 12h. . . . . . . . . . . . . . . . 111 figure 80. quad command page program instruction seq uence qio-spi, 32h. . . . . . . . . . . . . . . . 112 figure 81. program otp instruction sequence qio-spi . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 112 figure 82. subsector erase instruction sequence qio-spi. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 113 figure 83. sector erase instruction sequence qio-spi . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 114 figure 84. bulk erase instruction sequence qio-spi . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 114 figure 85. program/erase suspend instruction sequence qio- spi . . . . . . . . . . . . . . . . . . . . . . . . . 115 figure 86. program/erase resume instruction sequence qi o-spi. . . . . . . . . . . . . . . . . . . . . . . . . . 116 figure 87. read status register instruction sequence qio-sp i . . . . . . . . . . . . . . . . . . . . . . . . . . . . 116 figure 88. write status register instruction sequence qio-spi . . . . . . . . . . . . . . . . . . . . . . . . . . . . 117 figure 89. read lock register instruction and data-out sequence qio-spi . . . . . . . . . . . . . . . . . . 118 figure 90. write to lock register instruction sequence qi o-spi . . . . . . . . . . . . . . . . . . . . . . . . . . . 119 figure 91. read flag status register instruction sequence qio-spi . . . . . . . . . . . . . . . . . . . . . . . . 120 figure 92. clear flag status register instruction sequence qio-spi . . . . . . . . . . . . . . . . . . . . . . . . 120 figure 93. read nv configuration register instruction se quence qio-spi . . . . . . . . . . . . . . . . . . . 121 figure 94. write nv configuration register instruction sequence qio-spi . . . . . . . . . . . . . . . . . . . 122 figure 95. read volatile co nfiguration register instruction sequence qio-spi . . . . . . . . . . . . . . . . 123 figure 96. write volatile configurat ion register instruction sequence qio-spi . . . . . . . . . . . . . . . . 124 figure 97. read volatile enhanced configuration regi ster instruction sequence qio-spi . . . . . . . 124 figure 98. write volatile enhanced configuration re gister instruction sequence qio-spi . . . . . . . 125 figure 99. n25q032 read functionality flow chart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 127 figure 100. xip mode directly after power on . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129
m25q032 - 3 v list of figures 11/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. figure 101. xip: enter by vcr 2/2 (qiofr in normal spi protocol example) . . . . . . . . . . . . . . . . . . . 130 figure 102. power-up timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 132 figure 103. ac measurement i/o waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 36 figure 104. reset ac waveforms while a program or erase cycle is in progress . . . . . . . . . . . . . . . . 139 figure 105. serial input timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140 figure 106. write protect setup and hold timing during wrsr when srwd=1 . . . . . . . . . . . . . . . . . 141 figure 107. hold timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 141 figure 108. output timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 142 figure 109. vpp h timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 42 figure 110. ufdfpn8 (mlp8) ultra thin dual flat package, no lead, 43 mm drawing . . . . . . . . . 143 figure 111. vdfpn8 (mlp8) very thin pitch dual flat package, no lead, 65 mm drawing . . . . . . 144 figure 112. vdfpn8 (mlp8) very thin dual flat package 8 leads, 86x1 mm drawing . . . . . . . . . 145 figure 113. so8w ? 8 lead plastic small outline, 208 m ils body width, drawing . . . . . . . . . . . . . . 146 figure 114. so16 wide ? 16 lead plastic small outline, 300 mils body width, drawing. . . . . . . . . . 147 figure 115. tbga - 6 x 8 mm, 24-ball, drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 148 figure 116. so8n ? 8 lead plastic small outline, 150 m ils body width, drawing . . . . . . . . . . . . . . . 149
description n25q032 - 3 v 12/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. 1 description the n25q032 is a 32 mbit (4mb x 8) serial flash memory, with advan ced write protection mechanisms. it is accessed by a high speed spi -compatible bus and f eatures the possibility to work in xip (?exec ution in place?) mode. the n25q032 supports innovative, high-perform ance quad/dual i/o instructions, these new instructions allow to double or quadruple the transfer bandwidth for read and program operations. furthermore the memory can be oper ated with 3 different protocols: z standard spi (extended spi protocol) z dual i/o spi z quad i/o spi the standard spi protocol is enriched by the new quad and dual instructions (extended spi protocol). for dual i/o spi (dio-spi) all the instructions codes, the addresses and the data are always transmitted across two data lines . for quad i/o spi (qio- spi) the instructions codes, the addresses and the data are always transmitted across four data lines thus enabling a tremendous improvement in both random access time and data throughput. the memory can work in ?xip mode?, that means the device only requires the addresses and not the instructions to output the data. this mode dramatically reduces random access time thus enabling many applications requiring fast code execution without shadowing the memory content on a ram. the xip mode can be used with qio-spi, dio-spi , or extended spi protocol, and can be entered and exited using different dedicated in structions to allow ma ximum flexibility: for applications required to enter in xip mode righ t after power up of the device, this can be set as default mode by using dedicated non volatile register (nvr) bits. another feature is the ability to pause and resume program and erase cycles by using dedicated program/erase suspend and resume instructions. the n25q032 memory offers the following additiona l features to be configured by using the non volatile configuration regist er (nvcr) for default /non-vola tile settings or by using the volatile and volatile en hanced configuration registers for volatile settings: z the number of dummy cycles for fast read in structions (single, dual and, quad i/o) according to the operating frequency z the output buffer impedance z the type of spi protocol (ext ended spi, dio-spi or qio-spi) z the required xip mode z the hold (reset) functi onality enabling/disabling z the wrap mode enabling/disabling. the memory is organized as 64 (64-kbyte) main sectors that are further divided into 16 subsectors each (1024 subsectors in total). the memory can be erased a 4-kbyte subsector at a time, a 64-kbyte se ctor at a time, or as a whole. the memory can be write protected by software using a mix of volatile and non-volatile protection features, depending on the applicatio n needs. the protection granularity is of 64- kbyte (sector granularity) for volatile protections.
n25q032 - 3 v description 13/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. the n25q032 has 64 one-time-programmable by tes (otp bytes) that can be read and programmed using two dedicated instructions, read otp (rotp) and program otp (potp), respectively. these 64 bytes can be permanently locked by a particular program otp (potp) sequence. once they have been locked, they become read-only and this state cannot be reversed. many different n25q032 configurations are ava ilable, please refer to the ordering scheme page for the possibilities. additi onal features are available as security options (the security features are described in a dedicated application note). please contact your nearest numonyx sales office for more information. figure 1. logic diagram note: reset functionality is available in devices with a dedicated part number. see section 16: ordering information . note: there is an exposed central pad on the underside of the mlp8 package. this is pulled, internally, to vss, and mu st not be allowed to be connected to any other vo ltage or signal line on the pcb. logic_diagram_x25x s v cc hold/ dq3 v ss dq1 c dq0 w/ v pp /dq2 table 1. signal names signal description i/o c serial clock input dq0 serial data input i/o (1) dq1 serial data output i/o (2) s chip select input w /vpp/ dq2 write protect/enhanced program supp ly voltage/additional data i/o i/o (3) hold/dq3 (4) hold (reset function available upon customer request)/additional data i/o i/o (3) v cc supply voltage ? v ss ground ? 1. provides dual and quad i/o for extended spi protocol instruct ions, dual i/o for dual i/o spi protocol instructions, and quad i/o for quad i/o spi protocol instructions. 2. provides dual and quad instruction input for extended spi protocol, dual instructi on input for dual i/o spi protocol, and quad instruction input for quad i/o spi protocol. 3. provides quad i/o for extended spi protocol instructio ns, and quad i/o for quad i/o spi protocol instructions. 4. reset functionality available with a dedicated part number. see section 16: ordering information .
description n25q032 - 3 v 14/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. figure 2. so8n, so8w and mlp8 connections 1. reset functionality available in devi ces with a dedicated part number. see section 16: ordering information . figure 3. so16 connections 1. du = don?t use. 2. see package mechanical section for package dimensions , and how to identify pin-1. 3. reset functionality available in devi ces with a dedicated part number. see section 16: ordering information . figure 4. bga connections 1. nc = no connect. 2. see figure 115.: tbga - 6 x 8 mm, 24-ball, drawing . 1 2 3 4 8 7 6 5 dq0 v ss c dq1 s v cc hold/dq3 w/v pp /dq2 1 2 3 4 16 15 14 13 du du du du v cc du du 5 6 7 8 12 11 10 9 dq1 v ss du du s dq0 c w/v pp /dq2 hold/dq3 a c d 2 3 c dq v dq v cc c c c c c c c c c c c c c c c c hold/dq3 w/v pp /dq2
n25q032 - 3 v signal descriptions 15/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. 2 signal descriptions 2.1 serial data output (dq1) this output signal is used to transfer data seri ally out of the device. data are shifted out on the falling edge of serial clock (c). when used as an input, it is latched on the rising edge of the serial clock (c). in the extended spi protocol, during the quad and dual input fast program (qifp, difp) instructions and during the quad and dual input extended fast program (qiefp, diefp) instructions, pin dq1 is used also as an input. in the dual i/o spi protocol (dio-spi) the dq1 pin always acts as an input/output. in the quad i/o spi protocol (qio-spi) the dq1 pin always acts as an input/output, with the exception of the program or erase cycle performed with the enhanced program supply voltage (vpp). in this case the device temp orarily goes in extend ed spi protocol. the protocol then becomes qio-spi as so on as the vpp pin voltage goes low. 2.2 serial data input (dq0) this input signal is used to transfer data seri ally into the device. it receives instructions, addresses, and the data to be programmed. values are latched on the rising edge of serial clock (c). data are shifted out on the falling edge of the serial clock (c). in the extended spi protocol, during the qu ad and dual output fa st read (qofr, dofr) and the quad and dual input/output fast read (qiofr, diofr) inst ructions, pin dq0 is also used as an input/output. in the dio-spi protocol the dq0 pin always acts as an input/output. in the qio-spi protocol, the dq0 pin always acts as an input/output, with the exception of the program or erase cycle performed with the enhanced program supply voltage (vpp). in this case the device temporarily goes in exte nded spi protocol. then, the protocol returns to qio-spi as soon as th e vpp pin voltage goes low. 2.3 serial clock (c) this input signal provides the timing for the serial interface. instructions, addresses, or data present at serial data input (dq0) are latched on the rising edge of serial clock (c). data are shifted out on the falling ed ge of the serial clock (c). 2.4 chip select (s ) when this input signal is high, the device is de selected and serial data output (dq1) is at high impedance. unless an internal program, erase or write status register cycle is in progress, the device will be in the standby power mode (this is no t the deep power-down mode). driving chip select (s ) low enables the device, placing it in the active power mode. after power-up, a falling e dge on chip select (s ) is required prior to the start of any instruction.
signal descriptions n25q032 - 3 v 16/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. 2.5 hold (hold ) or reset (reset ) the hold (hold ) signal is used to pause any serial communications with the device without deselecting the device. reset functionality is present in stead of hold in devices with a dedicated part number. see section 16: ordering information . during hold condition, the serial data output (dq1) is in high impedance, and serial data input (dq0) and serial clock (c) are don't care. to start the hold condition, the device must be sele cted, with chip select (s ) driven low. for devices featuring reset instead of hold functionality, the reset (reset ) input provides a hardware reset for the memory. when reset (reset ) is driven high, the memory is in the normal operating mode. when reset (reset ) is driven low, the memory will enter t he reset mode. in this mode, the output is high impedance. driving reset (reset ) low while an internal operation is in progress will affect this operation (write, program or erase cycle) and data may be lost. in the extended spi protocol, during the qofr, qiofr, qifp and the quad extended fast program (qiefp) instructions, the hold (reset ) / dq3 is used as an input/output (dq3 functionality). in qio-spi, the hold (reset ) / dq3 pin acts as an i/o (d q3 functionality), and the hold (reset ) functionality disabled when the device is selected. when the device is deselected (s signal is high), in parts with rese t functionality, it is possible to reset the device unless this functionality is not disabled by mean of dedicated registers bits. the hold (reset) functionality can be disabl ed using bit 3 of the nvcr or bit 4 of the vecr. 2.6 write protect/enhanced program supply voltage (w /vpp), dq2 w /vpp/dq2 can be used as: z a protection control input. z a power supply pin. z i/o in extended spi protocol quad instructions and in qio-spi protocol instructions. when the device is operated in extended spi pr otocol with single or dual instructions, the two functions w or vpp are selected by the voltage range applied to the pin. if the w /vpp input is kept in a low voltage range (0 v to v cc) the pin is seen as a control input. this input signal is used to freeze the size of the area of memory that is protected against program or erase instructions (as specified by the values in the bp[0:3] bits of t he status register. (see table 2.: status register format ). if vpp is in the range of vpph, it acts as an additional power supply during the program or erase cycles (see table 27.: operating conditions ). in this case vpp mu st be stable until the program or erase algorithm is completed. during the extended spi protocol, the qof r and qiofr instructions, and the qio-spi protocol instructions, the pin w /vpp/dq2 is used as an input/ output (dq2 functionality).
n25q032 - 3 v signal descriptions 17/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. using the extended spi protocol the qifp, qiefp and the qio-spi program/erase instructions, it is still possible to use the vpp additional po wer supply to speed up internal operations. however, to enable this possibility it is necessary to set bit 3 of the volatile enhanced configuration register to 0. in this case the w /vpp/dq2 pin is used as an i/o pin until the end of the instruction sequence. after the last input data is shifted in, the ap plication should apply vpp voltage to w /vpp/dq2 within 200 ms to speed up the inte rnal operations. if the vpp voltage is not applied within 200 ms the program/erase operations start with standard speed. the default value of t he vecr bit 3 is 1, and the vpp func tionality for quad i/o modify instruction is disabled. 2.7 v cc supply voltage v cc is the supply voltage. 2.8 v ss ground v ss is the reference for the v cc supply voltage.
spi modes n25q032 - 3 v 18/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. 3 spi modes these devices can be driven by a micro controller with its spi peripheral running in either of the two following modes: cpol=0, cpha=0 cpol=1, cpha=1 for these two modes, input data is latched in on the rising edge of serial clock (c), and output data is available from t he falling edge of serial clock (c). the difference between the two modes, as shown in figure 5 , is the clock polarity when the bus master is in standby mode and not transferring data: c remains at 0 for (cpol=0, cpha=0) c remains at 1 for (cpol=1, cpha=1) figure 5. bus master and memory devices on the spi bus shown here is an example of three devices work ing in extended spi pr otocol for simplicity connected to an mcu, on an spi bus. only one device is selected at a time, so only one device drives the serial data output (dq1) line at a time; the other devices are high impedance. resistors r ensures that the n25q032 is not selected if the bus master leaves the s line in the high impedance state. as the bus master may enter a state where all inputs/outputs are in high impedance at the same time (for example, when the bus master is reset), the clock line (c) must be connected to an external pull-down resistor so that, when all inputs/outputs become high impedance, the s line is pulled high while the c line is pulled low. this ensures that s and c do not become high at the same time, and so that the t shch requirement is met. the typical value of r is 100 k , assuming that the time constant r*c p ai13725b spi bus master spi memory device sdo sdi sck c dq1dq0 s spi memory device c dq1 dq0 s spi memory device c dq1dq0 s cs3 cs2 cs1 spi interface with (cpol, cpha) = (0, 0) or (1, 1) w hold hold w hold rrr v cc v cc v cc v cc v ss v ss v ss v ss r w
n25q032 - 3 v spi modes 19/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. (c p = parasitic capacitance of the bus line) is shorter than the time during which the bus master leaves the spi bus in high impedance. example: c p = 50 pf, that is r*c p = 5 s <=> the application must ensure that the bus master never leaves the spi bus in the high impedance state for a time period shorter than 5 s. the write protect (w ) and hold (hold ) signals should be driven, high or low as appropriate. figure 6. spi modes supported ai13730 c msb cpha dq0 0 1 cpol 0 1 dq1 c msb
spi protocols n25q032 - 3 v 20/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. 4 spi protocols the n25q032 memory can work with 3 different serial protocols: z extended spi protocol. z dual i/o spi (dio-spi) protocol. z quad i/o spi (qio-spi) protocol. it is possible to choose among the three protocols by means of user volatile or non-volatile configuration bits.it's not possible to mix extended spi, dio-spi, a nd qio-spi protocols. the device can operate in xip mode in all 3 protocols. 4.1 extended spi protocol this is an extension of the standard (legacy) spi protocol. instructions are transmitted on a single data line (dq0), while addresses and data are transmitted by one, two or four data lines (dq0, dq1, w /vpp(dq2) and hold / (dq3) according to the instruction. when used in the extended spi protocol, thes e devices can be driven by a micro controller in either of the two following modes: z cpol=0, cpha=0 z cpol=1, cpha=1 please refer to the spi modes for a detailed description of these two modes 4.2 dual i/o spi (dio-spi) protocol dual i/o spi (dio-spi) protocol: instruct ions, addresses and i/o data are always transmitted on two data lines (dq0 and dq1). also when in dio-spi mode, the device can be driven by a micro controller in either of the two following modes: z cpol= 0, cpha= 0 z cpol= 1, cpha= 1 please refer to the spi modes for a detailed description of these two modes. note: extended spi protocol dual i/o instructions allow only address and data to be transmitted over two data lines. however, dio-spi allows instructions, addresses, and data to be transmitted on two data lines. this mode can be set using two ways z volatile: by setting bit 6 of the vecr to 0. the device enters dio-spi protocol immediately after the write enhanced vo latile configuration register sequence completes. the device retu rns to the default working mode (defined by nvcr) on power on. z default/ non-volatile: this is default mode on power-up. by setting bit 2 of the nvcr to 0. the device enters dio-spi protoc ol on the subsequent power-on. after all subsequent power-on sequences, the device still starts in dio-spi protocol unless bit 2 of nvcr is set to 1 (default value, corresponding to extended spi protocol) or bit 3 of nvcr is set to 0 (corresponding to qio-spi protocol) .
n25q032 - 3 v spi protocols 21/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. 4.3 quad spi (qio-spi) protocol quad spi (qio-spi) pr otocol: instructions, addresses, and i/o data are always transmitted on four data lines dq0, dq1, w /vpp(dq2), and hold / (dq3). the exception is the program/erase cycle performed with the vpp, in which case the device temporarily goes to extended spi protocol. go ing temporarily into extended spi protocol allows the application either to: z check the polling bits: wip bit in the status register or program/era se controller bit in the flag status register z perform program/erase suspend functions. note: as soon as the vpp pin voltag e goes low, the protocol retu rns to the qio-spi protocol. in qio-spi protocol the w and hold/ (reset) functionality is disabled when the device is selected (s signal low). when used in the qio-spi mode, these devices can be driven by a micro controller in either of the two following modes: z cpol=0, cpha=0 z cpol=1, cpha=1 please refer to the spi modes for a detailed description of the 2 modes. note: in the extended spi protocol only address and data are allowed to be transmitted on 4 data lines, however in qio-spi protocol, the addres s, data and instructions are transmitted across 4 data lines. this working mode is set in either bit 7 of the volatile enhanced configuration register (vecr) or in bit 3 of the non volatile configuration register (nvcr). this mode can be set using two ways z volatile: by setting bit 7 of the vecr to 0, the device enters qio-spi protocol immediately after the write enhanced vo latile configuration register sequence completes. the device return s to the default working protocol (defined by the nvcr) on the next power on. z default/ non- volatile: this is default protocol on po wer up. by setting bit 3 of the nvcr to 0, the device enters qio-spi prot ocol on the subsequent power-on. after all subsequent power-on sequences, the device still starts in qio-spi protocol unless bit 3 of the nvcr is set to 1 (default valu e, corresponding to extended spi mode).
operating features n25q032 - 3 v 22/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. 5 operating features 5.1 extended spi protoc ol operating features 5.1.1 read operations to read the memory content in extended spi pr otocol different instructions are available: read, fast read, dual output fast read, dual input output fast read, quad output fast read and quad input output fast read, allowing the application to choose an instruction to send addresses and receive data by one, two or four data lines. note: in the extended spi protocol the instruction co de is always sent on one data line (dq0): to use two or four data lines the user must us e either the dio-spi or the qio-spi protocol respectively. for fast read instructions the number of dummy clock cycles is configurable by using vcr bits [7:4] or nvcr bits [15:12]. after a successful reading instruction a reduced tshsl equal to 20 ns is allowed to further improve random access time (in all the othe r cases tshsl should be at least 50 ns). see table 31.: ac characteristics . 5.1.2 page programming to program one data byte, two instructions are required: write enable (wren), which is one byte, and a page program (pp) sequence, which consists of four bytes plus data. this is followed by the internal program cycle (of duration t pp ). to spread this overhead, the page program (pp) instruction allows up to 256 bytes to be programmed at a time (changing bits from ?1? to ?0?), provided that they lie in consecutive addresses on the same page of memory. for optimized timings, it is recommended to use the page program (pp) instruction to program all consecutive targeted bytes in a single sequence versus using several page program (pp) sequences with each containing only a few bytes (see section 5.2.3: page programming and table 31: ac characteristics ). 5.1.3 dual input fast program the dual input fast program (difp) instructi on makes it possible to program up to 256 bytes using two input pins at the same time (by changing bits from ?1? to ?0?). for optimized timings, it is recommended to use the difp instruction to program all consecutive targeted bytes in a single sequence rather using several difp sequences each containing only a few bytes (see section 9.1.13: dual input fast program (difp) ). 5.1.4 dual input extended fast program the dual input extended fast program (diefp ) instruction is an enhanced version of the dual input fast program instru ction, allowing to transmit address across two data lines. for optimized timings, it is recommended to use the diefp instruction to program all consecutive targeted bytes in a single sequence rather than using several diefp sequences, each containing only a few bytes.
n25q032 - 3 v operating features 23/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. 5.1.5 quad input fast program the quad input fast program (qif p) instruction makes it possible to program up to 256 bytes using 4 input pins at the same time (by changing bits from 1 to 0). for optimized timings, it is recommended to use the qifp instruction to program all consecutive targeted bytes in a single sequenc e rather than using several qifp sequences each containing only a few bytes. 5.1.6 quad input ex tended fast program the quad input extended fast program (qiefp) instruction is an enhanced version of the quad input fast program instruction, allowing parallel input on the 4 input pins, including the address being sent to the device. for optimized timings, it is recommended to use the qiefp instruction to program all consecutive targeted bytes in a single sequence rather than using several qiefp sequences each containing only a few bytes. 5.1.7 subsector erase, se ctor erase and bulk erase the page program (pp) instruction a llows bits to be reset from ?1? to?0?. in order to do this the bytes of memory need to be erased to all 1s (ffh). this can be achieved as follows: z a subsector at a time, us ing the subsector erase (sse) instruction. see section 16: ordering information ; z a sector at a time, using the sector erase (se) instruction; z throughout the entire memory, using the bulk erase (be) instruction. this starts an internal erase cycle (of duration t sse , t se or t be ). the erase instruction must be preceded by a write enable (wren) instruction. 5.1.8 polling during a write, program or erase cycle a further improvement in th e time to write status register (wrsr), potp, pp, difp,diefp,qifp, qiefp or eras e (sse, se or be) can be achi eved by not waiting for the worst case delay (tw, tpp, tsse, tse, or t be). the application prog ram can monitor if the required internal operation is completed, by polling the dedicated register bits to establish when the previous write, program or erase cycle is complete. the information on the memory being in progress for a program, erase, or write instruction can be checked either on the write in progress (wip) bit of the status register or in the program/erase controller bit of the flag status register. note: the program/erase controller bit is the opposite state of the wip bit in the status register. in the flag status register additional information can be checked, as eventual program/erase failures by mean of the program or erase error bits.
operating features n25q032 - 3 v 24/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. 5.1.9 active power and standby power modes when chip select (s ) is low, the device is selected, and in the active power mode. when chip select (s ) is high, the device is deselected, but could remain in the active power mode until all internal cycles have completed (program, erase, write status register). the device then goes in to the standby powe r mode. the device consumption drops to i cc1 . 5.1.10 hold (or reset) condition the hold (hold ) signal is used to pause serial communications with the device without resetting the clocking sequence. however, taking this signal low does not terminate any write status register, program or erase cycle that is currently in progress. to enter the hold condition, the device must be selected, with chip select (s ) low. the hold condition starts on the falling edge of the hold (hold ) signal, provided that the serial clock (c) is low (as shown in figure 7 ). the hold condition ends on the rising edge of the hold (hold ) signal, provided that the serial clock (c) is low. if the falling edge does not coincide with serial clock (c) being low, the hold condition starts after serial clock (c) next goes low. similarly, if the rising edge does not coincide with serial clock (c) being low, the hold condi tion ends after serial clock (c) next goes low (this is shown in figure 7 ). during the hold condition, the serial data output (dq1) is high impedance, and serial data input (dq0) and serial clock (c) are don?t care. normally, the device is kept selected, with chip select (s ) driven low for the whole duration of the hold condition. this is to ensure that the state of the internal logic remains unchanged from the moment of entering the hold condition. if chip select (s ) goes high while the device is in the ho ld condition, this has the effect of resetting the internal logic of the device. to restart communication with the device, it is necessary to drive hold (hold ) high, and then to drive chip select (s ) low. this prevents the device from going back to the hold condition. figure 7. hold condition activation reset functionality is available instead of hold in parts with a dedicated part number. see section 16: ordering information . driving reset (reset ) low while an internal operation is in progress will affect this operation (write, program or erase cycle) and data may be lost. on reset going low, the device enters the reset mode and a time of trhsl is then requ ired before the device can be reselected by ai02029d hold c hold condition (standard use) hold condition (non-standard use)
n25q032 - 3 v operating features 25/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. driving chip select (s ) low. for the value of trhsl, see table 31.: ac characteristics . all the lock bits are reset to 0 after a reset low pulse. the hold /reset feature is not available when the hold (reset ) / dq3 pin is used as i/o (dq3 functionality) during quad inst ructions: qofr, qiofr,qifp and qiefp. the hold /reset feature can be disabled by using of the bit 4 of the vecr.
operating features n25q032 - 3 v 26/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. 5.2 dual spi (dio-spi) protocol in the dual spi (dio-spi) protocol all th e instructions, addresses and i/o data are transmitted on two data lines. all the functional ity available in the extended spi protocol is also available in the dio-spi protocol. the di o-spi instructions are comparable with the extended spi instructions; however, in dio-spi , the instructions are multiplexed on the two data lines, dq0 and dq1. the only exceptions are the read, quad re ad, and program instructions, which are not available in dio-spi protocol, and the rdid in struction, which is replaced in the dio-spi protocol by the multiple i/o read id entification (miordid) instruction. the multiple i/o read identification instructio n reads just the standard spi electronic id (3 bytes), while the extended spi protocol rdid instruction allows acce ss to the uid bytes. to help the application code port from extend ed spi to dio-spi protocol, the instructions available in the dio-spi protocol have the same operation code as the extended spi protocol, the only exception being the miordid instruction. 5.2.1 multiple i/o read identification the multiple i/o read identifica tion (miordid) instruction is available to read the device electronic id.with respect to the rdid instruct ion of the extended spi protocol, the output data, shifted out on the 2 data lines dq0 and dq1. since the read id instruction in the dio-spi protocol is limited to 3 bytes of the standard electronic id, the uid bytes are no t read with the miordid instruction 5.2.2 dual command fast reading reading the memory data multiple xing the instruction, the addr esses and the output data on 2 data lines can be achieved in dio-spi prot ocol by mean of the du al command fast read instruction, that has 3 instruction codes (bbh, 3bh and 0bh) to help the application code porting from extended spi protocol to dio-sp i protocol. of course quad and single i/o read instructions are not available in dio-spi mode. for dual command fast read instructions the number of dummy clock cycles is configurable by using vcr bits [7:4] or nvcr bits [15:12]. after a successful reading instruction, a reduce d tshsl equal to 20ns is allowed to further improve random access time (in all the othe r cases tshsl should be at least 50 ns). see table 31.: ac characteristics . 5.2.3 page programming programming the memory by transmitting the in struction, addresses and the output data on 2 data lines can be achieved in dio-spi pr otocol by using the dual command page program instruction, that has 3 instruction co des (d2h, a2h and 02h) to help port from extended spi protocol to dio-spi protocol quad and single input program instructi ons are not available in dio-spi mode.
n25q032 - 3 v operating features 27/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. the dio-spi protocol is similar to the extended spi protocol i.e., to program one data byte two instructions are required: z write enable (wren), which is one byte, and a z dual command page program (dcpp) sequen ce, which consists of four bytes plus data. this is followed by the internal program cycle (of duration tpp). to spread this overhead, the dual command pa ge program (dcpp) inst ruction allows up to 256 bytes to be programmed at a time (changing bits from 1 to 0), provided that they are consecutive addresses on the same page of memory. for optimized timings, it is recommended to use the dcpp instruction to program all consecutive targeted bytes in a single sequence versus using several dcpp sequences with each containing only a few bytes. see table 31.: ac characteristics . 5.2.4 subsector erase, sect or erase and bulk erase similar to the extended spi protocol, in the di o-spi protocol to erase the memory bytes to all 1s (ffh) the subsector erase (sse), the sector erase (se) and the bulk erase (be) instructions are available. these instructions start an internal erase cycle (of duration tsse, tse or tbe). the erase instruction must be preceded by a write enable (wren) instruction. 5.2.5 polling during a write, program or erase cycle similar to the extended spi protocol, in the dio- spi protocol it is possible to monitor if the internal write, program or erase operation is co mpleted, by polling the dedicated register bits by using the read status register (rdsr) or read flag status register (rfsr) instructions, the only obvious difference is that instruction codes, addresses and output data are transmitted across two data lines. 5.2.6 read and modify registers similar to the extended spi protocol, the only ob vious difference is that instruction codes, addresses and output data are transmitted across two data lines 5.2.7 active power and standby power modes similar to the extended spi protocol, when chip select (s ) is low, the device is selected, and in the active power mode. when chip select (s ) is high, the device is deselected, but could remain in the active po wer mode until all internal cyc les have completed (program, erase, write cycles). the device then goes in to the standby power mode. the device consumption drops to icc1. 5.2.8 hold (or reset) condition the hold (or reset i.e. for parts having the reset functionality instead of hold pin) signal has exactly the same behavior in dio-spi pr otocol as do in extended spi protocol, so please refer to section 5.1.10, hold (or reset ) condition? in the extend spi protocol section for further details.
operating features n25q032 - 3 v 28/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. 5.3 quad spi (qio-spi)protocol in the quad spi (qio-spi) prot ocol all the instructions, addresses and i/o data are transmitted on four data lines, with the excepti on of the polling instruct ions performed during a program or erase cycle performed with vpp, in this case the device temporarily goes in extended spi protocol. the protocol again be comes qio-spi as soon as the vpp voltage goes low. all the functionality available in the extended spi protocol are also available in the qio-spi mode, with equivalent instruction transmitted on the 4 data lines dq0, dq1, dq2 and dq3. the exceptions are the read, dual read an d dual program instructions, that are not available in qio-spi protocol, and the rdid in struction, that is re placed in the qio-spi protocol by the multiple i/o read identificati on (miordid) instructi on. the multiple i/o read instruction reads just the standard spi el ectronic id (3 bytes), while with the extended spi protocol rdid instruction is poss ible to access also the uid bytes. to help the application code port from extend ed spi to qio-spi protocol, the instructions available in the qio-spi protocol have the same operation code as in the extended spi protocol, the only exception is the miordid instruction. 5.3.1 multiple i/o read identification the multiple i/o read identifica tion (miordid) instruction is available to read the device electronic id. with respect to the rdid instru ction of the extended spi protocol, the output data, shifted out on the 4 data lines dq0, dq1, dq2 and dq3. since in the qio-spi protocol the read id inst ruction is limited to 3 bytes of the standard electronic id, the uid bytes are no t read with the miordid instruction. 5.3.2 quad command fast reading the array data can be read by the quad command fast read instruction using 3 instructions (ebh, 6bh and 0bh) to help the application code port from extended spi protocol to dio-spi protocol. the instruction, address and output data are transmitted across 4 data lines. the dual and single i/o read instructions are not available in qio-spi protocol. 5.3.3 quad command page programming the memory can be programmed in qio-spi protocol by the quad command page program instruction using (02h, 12h and 32h). the instruction, address and input data are transmitted across 4 data lines the dual and single i/o program instructions are not available in qio-spi protocol programming the memory by multiplexing the in struction, the addresse s and the output data on 4 wires can be achieved in qio-spi pr otocol by mean of the quad command page program instruction, that has 3 instruction codes (02h, 12h and 32h) to help the application code porting from extended spi protocol to qio-spi protocol. similar to the extended spi protocol in the qio-spi protocol, to program one data byte two instructions are required: z write enable (wren), which is one byte, and z quad command page program (qcpp) sequence, which consists of i nstruction (one byte), address (3 bytes) and input data.
n25q032 - 3 v operating features 29/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. this is followed by the internal program cycle (of duration tpp). to spread this overhead, the quad command page program (qcpp) instruction allows up to 256 bytes to be programmed at a time (changi ng bits from 1 to 0), provided that they are in consecutive addresses on the same page of memory. for optimized timings, it is recommended to use the qcpp instruction to program all consecutive targeted bytes in a single se quence versus using several qcpp sequences with each containing only a few bytes. see table 31.: ac characteristics . the qcpp instruction is transmitted across 4 data lines except wh en vpp is raised to vpph. the vpp can be raised to vpph to decrease progra mming time (p rovided that the bit 3 of the vecr has been set to 0 in advance ). when bit 3 of vecr is set to 0 after the quad command page program instruction sequence has been received, the memory temporarily goes in extended spi protocol, and is possible to perform polling instructions (checking the wip bit of the status register or the program/erase controller bit of the flag status register) or program/erase suspend instruction even if dq2 is temporarily used in this vpp functionality . the memory automatically comes back in qio-spi protocol as soon as the vpp pin goes low. 5.3.4 subsector erase, sect or erase and bulk erase similar to the extended spi protocol, subsecto r erase (sse), the sector erase (se) and the bulk erase (be) instructions are used to erase the memory in the qio-spi protocol. these instructions start an internal er ase cycle (of duration tsse, tse or tbe). the erase instruction must be preceded by a write enable (wren) instruction. the erase instructions are transmitted across 4 data lines unless the vpp is raised to vpph. the vpp can be raised to vpph to decrease eras ing time, provided that the bit 3 of the vecr has been set to 0 in advance. in this case, after the erase instruction sequence has been received, the memory temporarily goes in extended spi protocol, and it is possible to perform polling instructions (checking the wip bit of the status register or the program/erase controller bit of the flag st atus register) or program/erase suspend instruction even if dq2 is temporarily used in th is vpp functionalit y. the memory automatically comes back in qio-spi protocol as soon as the vpp pin goes low. 5.3.5 polling during a write, program or erase cycle it is possible to check if the internal write, program or erase operation is completed, by polling the dedicated register bits of the read status regist er (rdsr) or read flag status register (rfsr). when the program or erase cycle is performed with the vpp, the device temporarily goes in single i/o spi mode. the prot ocol became again qio-spi as soon as the vpp pin voltage goes low. 5.3.6 read and modify registers the read and modify register instructions are available and behave in qio-spi protocol exactly as they do in extended spi protocol, the only differenc e is that instruction codes, addresses and output data are transmitted across 4 data lines.
operating features n25q032 - 3 v 30/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. 5.3.7 active power and standby power modes exactly as in extended spi pr otocol, when chip select (s ) is low, the device is selected, and in the active power mode. when chip select (s ) is high, the device is deselected, but could remain in the active po wer mode until all internal (p rogram, erase, write) cycles have completed. the device then goes in to the standby power mode. the device consumption drops to icc1. 5.3.8 hold (or reset) condition the hold (hold ) feature (or reset feature, for parts having the reset functionality instead of hold) is disabled in qio-spi protocol when the device is selected: the hold (or reset )/ dq3 pin always behaves as an i/o pin (dq3 function) when the device is deselected. for parts with reset functionality, it is st ill possible to reset the memory w hen it is deselected (c signal high). 5.3.9 vpp pin enhanced supply voltage feature it is possible in the qio-spi protocol to use th e vpp pin as an enhanced supply voltage, but the intention to use vpp as acce lerated supply voltag e must be declared by setting bit 3 of the vecr to 0. in this case, to accele rate the program cycle the vpp pin must be raised to vpph after the device has received the last data to be programmed within 200ms. if the vpp is not raised within 200ms, the program operation starts with the standard internal cycle speed as if the vpp high voltage were not used, and a flag er ror appears on flag status register bit 3" .
n25q032 - 3 v volatile and non volatile registers 31/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. 6 volatile and non volatile registers the device features many different registers to store, in volatile or non volatile mode, many parameters and operating configurations: z legacy spi status register z 3 configuration registers: ? non volatile configuratio n register (nvcr), 16 bits ? volatile configuration register (vcr), 8 bits ? volatile enhanced configuration register (vecr), 8 bits the non volatile configuration register (nvcr) affects the memory configuration starting from the successive power-on. it can be used to make the memory start in a determined condition. the vcr and vecr affect the memory configur ation after every execution of the related write volatile configuration register (wrvcr) and write enhanced volatile configuration register (wrvecr) instructions. these instruct ions overwrite the memo ry configuration set at por by nvcr. as described in figure 8.: non volatile and volatile configuration register scheme , the working condition of the memory is set by an internal configuration register, which is not accessible by the user. the working parameters of the internal configuration register are loaded from the nvcr during the boot phase of the device. in this sense the nvcr can be seen as having the default settings of the memory. during the normal life of the application, ever y time a write volatile or enhanced volatile configuration register instruction is performed, the new configuration parameters set in the volatile registers are also copied in the internal configuration register, thus instantly affecting the memory behavior. please note that on the next power on the memory will start again in the working protocol set by the non volatile register parameters.
volatile and non volatile registers n25q032 - 3 v 32/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. figure 8. non volatile and volatile configuration register scheme a flag status register (fsr), 8 bits, is also available to check the status of the device, detecting possible errors or a progra m/erase internal cycle in progress. each register can be read and modified by means of dedicated instructions in all the 3 protocols (extended spi, dio-spi, and qio-spi). reading time for all regi sters is comparable; writing time instead is very different: nvcr bits are set as flash cell memory content requiring a longer time to perform internal writing cycles. see table 31.: ac characteristics . nvcr (non volatile configuration register) vcr (volatile configuration register) and vecr (volatile enhanced configuration register) icr (internal configuration register) device behaviour register download executed only during the power on phase registers download executed after a wrvcr or wrvecr instructions, it overwrites nvcr configurations on icr
n25q032 - 3 v volatile and non volatile registers 33/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. 6.1 legacy spi status register the status register contains a number of status and control bits that can be read or set by specific instructions: read status register (r dsr) and write status register (wrsr). this is available in all the 3 protocols (extended spi, dio-spi, and qio-spi). 6.1.1 wip bit the write in progress (wip) bit set to 1 indi cates that the memory is busy with a write status register, program or erase cycle. 0 indicates no cycle is in progress. 6.1.2 wel bit the write enable latch (wel) bit set to 1 indica tes that the internal write enable latch is set. when set to 0 the internal write enable latch is reset and no write status register, program or erase instruction is accepted. 6.1.3 block protect bits (bp2, bp1, bp0) the block protect (bp2, bp1, bp0) bits are non-volatile. they define the size of the area to be software protected against program and er ase instructions. these bits are written with the write status register (wrsr) instruction. when one or more of the block protect (bp2, bp1, bp0) bits is set to 1, the relevant memory area, as defined in table 10.: protected area sizes, upper (tb bit = 0) becomes protected against all pr ogram and erase instructions. the block protect (bp2, bp 1, bp0) bits can be written provided that the hardware protected mode has not been set. the bulk erase (be) instruction is executed if, and only if, all block protect (bp2, bp1, bp0) bits are 0. 6.1.4 tb bit the top/bottom (tb) bit is non-volatile. it can be set and reset with the write status register (wrsr) instruction provided that the write enable (wren) instruction has been issued. table 2. status register format b7 b0 srwd 0 tb bp2 bp1 bp0 wel wip status register write protect top/bottom bit block protect bits write enable latch bit write in progress bit
volatile and non volatile registers n25q032 - 3 v 34/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. the top/bottom (tb) bit is used in conjunct ion with the block protec t (bp2, bp1, bp0) bits to determine if the protected area defined by th e block protect bits starts from the top or the bottom of the memory array: z when tb is reset to '0' (default value), th e area protected by the block protect bits starts from the top of the memory array. z when tb is set to '1', the area protected by the block protect bits starts from the bottom of the memory array. the tb bit cannot be written when the srwd bit is set to '1' and the w pin is driven low. 6.1.5 srwd bit the status register write disable (srwd) bi t is operated in conjunction with the write protect (w /vpp) signal. the status r egister write disable (srwd) bit and the write protect (w /vpp) signal allow the device to be put in the ha rdware protec ted mode (when the status register write disable (srwd) bit is set to '1', and write protect ((w /vpp) is driven low). in this mode, the non-volatile bits of the status register (tb, bp2, bp1, bp0) become read- only bits and the write status register (wrsr) instruction is no longer accepted for execution. 6.2 non volatile configuration register the non volatile configuration register (nvcr) bits affects the default memory configuration after power-on. it can be used to make the memory start in the configuration to fit the application requirements. the device is delivered with non volatile config uration register (nvcr) bits all erased to 1 (ffffh). the purpose of the nvcr is to define the def ault memory settings after the power-on sequence related to many features: z the number of dummy clock cycle for fast read instructions, z xip mode configurations, z output driver strengths, z reset (or hold) disabling z multiple i/o protocol enabling. the nvcr can be read by the read non vo latile configuration register (rdnvcr) instruction and written by the write non volatile configurati on register (wrnvcr) in all the 3 available spi protocols. see the sections that follow as well as table 3.: non-volatile configuration register .
n25q032 - 3 v volatile and non volatile registers 35/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. table 3. non-volatile configuration register bit parameter value description note nvcr<15:12> dummy clock cycles 0000 as '1111' to optimize instruction execution (fastread, dofr,diofr,qofr, qiofr, rotp, rdsfdp) according to the frequency 0001 1 0010 2 0011 3 0100 4 0101 5 0110 6 0111 7 1000 8 1001 9 1010 10 1011 11 1100 12 1101 13 1110 14 1111 target on maximum allowed frequency fc (108mhz) and to guarantee backward compatibility (default) nvcr<11:9> xip enabling at por 000 xip for sio read 001 xip for dofr 010 xip for diofr 011 xip for qofr 100 xip for qiofr 101 reserved 110 reserved 111 xip disabled (default) nvcr<8:6> output driver strength 000 reserved impedance at vcc/2 001 90 010 60 011 45 100 reserved 101 20 110 15 111 30 (default)
volatile and non volatile registers n25q032 - 3 v 36/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. 6.2.1 dummy clock cycles nv configurati on bits (nvcr bits from 15 to 12) the bits from 15 to 12 of the non volatile configuration register store the default settings for the dummy clock cycles number after the fast read instructions (in all the 3 available protocols). the dummy clock cycles number can be set from 1 up to 15 as described here, according to operating frequency (the higher is the operating frequency, the bigger must be the dummy clock cycle number) to optimize the fast read instructions performance. the default values of these bits allow the memory to be safely used with fast read instructions at the maximum frequency (108 mh z). please note that if the dummy clock number is not sufficient for the operating frequency, the memory reads wrong data. table 4. maximum operative frequency by dummy clock cycles nvcr<5> reserved x don?t care default value = 1 nvcr<4> reset/hold disable 0 disabled disable pad hold/reset functionality 1 enabled (default) nvcr<3> quad input command 0 enabled enable command on four input lines 1 disabled (default) nvcr<2> dual input command 0 enabled enable command on two input lines 1 disabled (default) nvcr<1:0> reserved xx don't care default value = "11" table 3. non-volatile configuration register bit parameter value description note maximum allowed frequency (mhz) (1) dummy clock fastread dofr diofr qofr qiofr 1 54 50394320 2 95 85595639 3 105 95 75 70 49 4 108 105 88 83 59 5 108 108 94 94 69 6 108 108 105 105 78 7 108 108 108 108 86 8 108 108 108 108 95 9 108 108 108 108 105 10 108 108 108 108 108 1. all the values are guaranteed by characte rization and not 100% tested in production
n25q032 - 3 v volatile and non volatile registers 37/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. 6.2.2 xip nv configuration bits (nvcr bits from 11 to 9) the bits from 11 to 9 of the non volatile conf iguration register store the default settings for the xip operation, allowing the memory to start working directly on the required xip mode after successive por sequence: the device then accepts only address on one, two, or four wires (skipping the instruction) depending on the nvcr xip bits settings. the default settings for the xip bits of the nvcr enable the memory to start working in extended spi mode after the por sequence (xip directly after por is disabled). 6.2.3 output driver strengt h nv configuration bits (nvcr bits from 8 to 6) the bits from 8 to 6 of the non volatile conf iguration register store the default settings for the output driver strength, enabling to optimi ze the impedance at vcc/2 output voltage for the specific application. the default values of output driver strength bits of the nvcr set the output impedance at vcc/2 equal to 30 ohms. 6.2.4 hold (reset) disable nv configuration bit (nvcr bit 4) the hold (reset) disable bit can be used to disable the hold (reset) functionality of the hold (reset ) / dq3 pin as described in table 3.: non-volatile configuration register . this feature can be useful to avoid accidental hold or reset condition entries in applications that never require the hold (reset) functionality. the default values of hold (reset) bit of t he nvcr is set to enable the hold (reset) functionality. note: reset functionality is available instead of hold in devices with a dedicated part number. see section 16: ordering information . 6.2.5 quad input nv conf iguration bit (nvcr bit 3) the quad input nv configuration bit can be used to make the memory start working in qio- spi protocol directly after the power on sequence. the products are delivered with this set to 1, making the memory default in extended spi protocol. if the application sets this bit to 0, the device will enter in dio-spi prot ocol right after the next power on. please note that in case both qio-spi and di o-spi are enabled (both bit 3 and bit 2 of the non volatile configuration register set to 0), the memory will work in qio-spi. 6.2.6 dual input nv conf iguration bit (nvcr bit 2) the dual input nv configuration bit can be used to make the memory start working in dio- spi protocol directly after the power on sequence. the products are delivered with this set to 1, making the memory default in extended spi protocol, if the application sets this bit to 0 the device will enter in qio-spi protocol right af ter the next power on. please note that in case both qio-spi and di o-spi are enabled (both bit 3 and bit 2 of the non volatile configuration register set to 0), the memory will work in qio-spi.
volatile and non volatile registers n25q032 - 3 v 38/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. 6.3 volatile configuration register the volatile configuration register (vcr) affects the memory configuration after every execution of write volatile configuration regi ster (wrvcr) instructi on: this instruction overwrite the memory configuration set at por by the non volatile co nfiguration register (nvcr). its purpose is to define the dummy clock cycles number and to make the device ready to enter in th e required xip mode. table 5. volatile configuration register bit parameter binary value decimal value description vcr<7:4> dummy clock cycles (1) 0000 as '1111' to optimize instruction exec ution (fastread, dofr, diofr, qofr, qiofr, rotp, rdsfdp) according to the frequency 0001 1 0010 2 0011 3 0100 4 0101 5 0110 6 0111 7 1000 8 1001 9 1010 10 1011 11 1100 12 1101 13 1110 14 1111 15 targets maximum allowed frequency fc (108mhz) and guarantees backward compatibility (default) vcr<3> xip (2) 0 0 ready to enter xip mode 1 1 xip disabled (default) vcr<2> reserved x reserved fixed value = 0b vcr<1:0> wrap 00 0 16-byte wrap: output dat a wraps within an aligned 16-byte boundary starting from the address issued after the command code. 01 1 32-byte wrap: output dat a wraps within an aligned 32-byte boundary starting from the address issued after the command code. 10 2 64-byte wrap: output dat a wraps within an aligned 64-byte boundary starting from the address issued after the command code. 11 3 continous reading (default): all bytes are read sequentially 1. to optimize instruction executio n (fastread, dofr,diofr,qofr, qiofr, rotp) according to the frequency. 2. to make the data on dq0 during the first dummy clock not ?don? t care.? for devices with feature set digit equal to 2 or 4 in the part number (basic xip), th is bit is always don't care."
n25q032 - 3 v volatile and non volatile registers 39/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. 6.3.1 dummy clock cycle: vcr bits 7:4 the bits from 7 to 4 of the volatile configurat ion register, as the bits from 15 to 12 of the non-volatile configuration register, set the dum my clock cycles number after the fast read instructions (in all the 3 available protocol s). the dummy clock cycles number can be set from 1 up to 15 as described in table 5.: volatile configuration register , according to operating frequency (the higher is the opera ting frequency, the bigger must be the dummy clock cycle number, according to table 4.: maximum operative frequency by dummy clock cycles ) to optimize the fast read instructions performance. note: if the dummy clock number is not sufficient for the operating frequency, the memory reads wrong data. 6.3.2 xip volatile confi guration bits (vcr bit 3) the bit 3 of the volatile configuration register is the xip enabling bit, this bit must be set to 0 to enable the memory working on xip mode. for devices with a feature set digit equal to 2 or 4 in the part number (basic xip), this bit is always don't care, and it is possible to operate the memory in xip mode without setting it to 0. see section 16: orde ring information . 6.3.3 wrap: vcr bits 1:0 the bits from 1 to 0 allow the wrap mode to be available for each kind of read instruction and protocol. a specific settin g provides the ability to read th e memory from sequentially (standard) mode to a wrap mode, where the reads can be confined inside the 16, 32, or 64 byte boundary. for wrap setting options, see table 5.: volatile configuration register . the following table shows an example of the sequen ce of bytes in the 16-byte, 32-byte, and 64- byte options, according to the starting address. 6.4 volatile enhanced configuration register the volatile enhanced configuration register (vecr) affects the memory configuration after every execution of write volatile enhanced configuration register (wrvecr) instruction: this instructio n overwrite the memory configuration set during the por sequence by the non volatile configuration register (nvcr). its purpose is: z enabling of qio-spi protocol and dio-spi protocol table 6. sequence of bytes read during wrap mode starting address 16-byte wrap 32-byte wrap 64-byte wrap 0 0-1-2- . . . -15-0-1- . . 0-1-2- . . . -31-0-1- . . 0-1-2- . . . -63-0-1- . . 1 1-2- . . . -15-0-1-2- . . 1-2- . . . -31-0-1-2- . . 1-2- . . . -63-0-1-2- . . 15 15-0-1-2-3- . . . -15-0-1- . . 15-16-17- . . . -31-0-1- . . 15-16-17- . . . -63-0-1- . . 31 31-16-17- . . . -31-16-17- . . 31-0-1-2-3- . . . -31-0-1- . . 31-32-33- . . . -63-0-1- . . 63 63-48-49- . . . -63-48-49- . . 63-32-33- . . . -63-32-33- . . 63-0-1- . . . -63-0-1- . .
volatile and non volatile registers n25q032 - 3 v 40/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. warning: warning: in case of both qio-spi and dio-spi enabled, the memory works in qio-spi z hold (reset) functionality disabling z to enable the vpp functionality in quad i/o modify operations z to define output driver strength (3 bit) 6.4.1 quad input command vecr<7> the quad input command configuration bit can be used to make the memory start working in qio-spi protocol directly after the write volatile enhanced configuration register (wrvecr) instruction. the default value of th is bit is 1, corresponding to extended spi protocol, if this bit is set to 0 the memory works in qio-spi protocol. if vecr bit 7 is set back to 1 the memory start working again in extended spi protocol, unless the bit 6 is set to 0 (in this case the memory start working in dio-spi mode) . please note that in case both qio-spi and di o-spi are enabled (both bit 7and bit 6 of the vecr set to 0), the memory will work in qio-spi. table 7. volatile enhanced configuration register bit parameter value description note vecr<7> quad input command 0 enabled enable command on four input lines 1 disabled (default) vecr<6> dual input command 0 enabled enable command on two input lines 1 disabled (default) vecr<5> reserved x reserved fixed value = 0b vecr<4> reset/hold disable 0 disabled disable pad hold/reset functionality 1 enabled (default) vecr<3> accelerator pin enable in qio-spi protocol or in qifp/qiefp 0 enabled the bit must be considered in case of qifp, qiefp, or qio-spi protocol. it is ?don?t care? otherwise. 1 disabled (default) vecr<2:0> output driver strength 000 reserved impedance at v cc /2 001 90 010 60 011 45 100 reserved 101 20 110 15 111 30 (default)
n25q032 - 3 v volatile and non volatile registers 41/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. 6.4.2 dual input command vecr<6> the dual input command configuration bit can be used to make the memory start working in dio-spi protocol directly after the writ e volatile enhanced configuration register (wrvecr) instruction. the default value of this bit is 1, corresponding to extended spi protocol, if this bit is set to 0 the memory works in dio-spi protocol (unless the volatile enhanced configuration register bit 7 is al so set to 0). if the volatile enhanced configuration register bit 6 is set back to 1 the memory start working again in extended spi protocol. please note that in case both qio-spi and di o-spi are enabled (both bit 7 and bit 6 of the vecr are set to 0), the memory will work in qio-spi. 6.4.3 reset/hold disable vecr<4> the hold (reset) disable bit can be used to disable the hold (reset) functionality of the hold (rese t) / dq3 pin right after the write vola tile enhanced configuration register (wrvecr) instruction. this feature can be useful to avoid accidental hold or reset condition entries in applications that never requir e the hold (reset) functionality. if this bit is set to 0 the hold (reset) functionality is disabled , it is possible to e nable it back by setting this bit to 1. please note that after the ne xt power on the hold (reset) fu nctionality will be enabled again unless the bit 4 of the non volatile configuration regist er is set to 0. note: reset functionality is available instead of hold in devices with a dedicated part number. see section 16: ordering information . 6.4.4 accelerator pin enable: qio- spi protocol / qifp/qiefp vecr<3> the bit 3 of the volatile enhanced configuration register determines wh ether it is possible to use the vpp accelerating voltage to spee d up internal modify operation with quad program and erase instructions (both in extended or qio-spi protocols). if we want to use the vpp voltage with quad i/o modify instructions, we must set previously this bit to 0 (his default value is 1, in this case the vpp pin functionality is disabled in all quad i/o operations: both in exte nded spi and qio-spi protocols). if the volatile enhanced configuration register bi t 3 is set to 0, using the qio-spi protocol, after a quad command page program instruction or an erase instruction is received (with all input data in the program case) and the memo ry is de-selected, the protocol temporarily switches to extended spi protocol until vpp pa sses from vpph to normal i/o value (this transition is mandatory to come back to qio-spi pr otocol), to enable the possibility to perform polling instructions (to ch eck if the internal modify cycl e is finished by means of the wip bit of the status register or of the program/erase controller bit of the flag status register) or program/erase suspend instruction even if the dq2 pin is temporarily used in his vpp functionality. if the volatile enhanced configuration register bit 3 is set to 0, after any quad modify instruction (both in extended spi protocol and qio-spi protocol) there is a maximum allowed time-out of 200ms after the last instruction input is received and the memory is de- selected to raise the vpp signal to vpph, ot herwise the modify instruction start at normal speed, without the vpph enhancement, and a flag error appears on flag status register bit 3.
volatile and non volatile registers n25q032 - 3 v 42/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. 6.4.5 output driver strength vecr<2:0> the bits from 2 to 0 of the vecr set the value of the output driver strength, enabling to optimize the impedance at vcc/2 output voltage for the specific application as described in table 7.: volatile enhanced configuration register . the default values of output driver strength is set by the dedicated bits of the non volatile configuration register (nvcr), the parts are delivered with the output impedance at vcc/2 equal to 30 ohms. 6.5 flag status register the flag status register is a powerful tool to investigate the status of the device, checking information regarding what is actually doing the memory and detecting possible error conditions. the flag status register is composed by 8 bit. three bits (program/era se controller bit, erase suspend bit and program suspend bit) ar e a ?status indicator bit?, they are set and reset automatically by the memory . four bits (erase error bit, program error bit, vpp 1 to 0 error bit and protection error bit) are ?error indicators bits?, they are set by the memory when some program or erase operation fails or the user tries to perform a forbidden operation. the user can clear the error indicato rs bits by mean of the clear flag status register (clfsr) instruction. all the flag status register bits can be read by mean of the read status register (rfsr) instruction. 6.5.1 p/e controll er status bit the bit 7 of the flag status register represen ts the program/erase controller status bit, it indicates whether there is a program/erase internal cycle active. when p/e controller status bit is low (fsr<7>=0) the device is busy; when the bit is high (fsr<7>=1) the device is ready to process a new command. this bit has the same meaning of write in progress (wip) bit of the standard spi status register, but with opposite logic: fsr<7> = not wip it's possible to make t he polling instructions, to check if the internal modify operations are finished, both on the flag status register bi t 7 or on wip bit of the status register. table 8. flag status register bit description note 7 p/e controller (not wip) status 6 erase suspend status 5 erase error 4 program error 3 vpp error 2 program suspend status 1 protection error 0 reserved
n25q032 - 3 v volatile and non volatile registers 43/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. 6.5.2 erase suspend status bit the bit 6 of the flag status register represen ts the erase suspend status bit, it indicates that an erase operation has been suspended or is going to be suspended. the bit is set (fsr<6>=1) within the erase sus pend latency time, that is as soon as the program/erase suspend command (pes) has been i ssued, therefore th e device may still complete the operation before entering the suspend mode. the erase suspend status should be considered valid when the p/e controller bit is high (fsr<7>=1). when a program/erase resume command (per) is issued the erase suspend status bit returns low (fsr<6>=0) 6.5.3 erase status bit the bit 5 of the flag status register represents the erase status bit. it indicates an erase failure or a protection error when an erase operation is issued. when the erase status bit is high (fsr<5>=1) after an erase failure that means that the p/e controller has applied the ma ximum pulses number to the portion to be erased and still failed to verify that it has correctly erased. the erase status bit should be read once the p/e controller status bit is high. the erase status bit is related to all possible erase operations: sector erase, sub sector erase, and bulk erase in all the three available protocols (spi, dio-spi and qio-spi). once the bit 5 is set high, it can only be reset low (fsr<5>=0) by a clear flag status register command (clfsr). if set high it should be reset before a new erase command is issued; otherwise the new command will appear to fail. 6.5.4 program status bit the bit 4 of the flag status register repr esents the program status bit. it indicates: z a program failure z an attempt to program a '1' on '0' when vpp= vpph (only when the pattern is a multiple of 64 bits, otherwise this bit is "don't care"). z a protection error when a program is issued when the program status bit is high (fsr<4>=1) after a program failure that means that the p/e controller has applied the maximum pulses number to the bytes and it still failed to verify that the required data have been correctly programmed. after an attempt to program '1' on '0', the fsr<4> only goes high (fsr<4>=1) if vpp=vpph and the data pattern is a multiple of 64 bits: if vpp is not vpph, fsr<4> remains low and the atte mpt is not shown while if vpp is equal to vpph but the pattern is not a 64 bits multiple the bit 4 is don't care. the program status bit should be read once the p/e controller status bit is high. the program status bit is related to all poss ible program operations in the extended spi protocol: page program, dual and quad input fast program, dual and quad input extended fast program, and otp program.
volatile and non volatile registers n25q032 - 3 v 44/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. the program status bit is related to the following program operations in the dio-spi and qio-spi protocols: dual and quad command page program and otp program. once the bit is set high, it can only be reset low (fsr<4>=0) by a clear flag status register command (clfsr). if set high it should be reset before a new program command is issued, otherwise the new command will appear to fail. 6.5.5 vpp status bit the bit 3 of the flag status register represents the vpp status bit. it indicates an invalid voltage on the vpp pin during program and er ase operations. the vpp pin is sampled at the beginning of a program or erase operation. if vpp becomes invalid during an operation, that is the voltage on vpp pin is below the vpph voltage (9v), the vpp status bit goes high (fsr<3>=1) and in determinate results can occur. once set high, the vpp status bit can only be reset low (fsr<3>=0) by a clear flag status register command (clfsr). if set high it should be reset before a new program or erase command is issued; otherwise, the new command will appear to fail. 6.5.6 program suspend status bit the bit 2 of the flag status register represen ts the program suspend status bit. it indicates that a program operation has been suspended or is going to be suspended. the bit is set (fsr<2>=1) within the program suspend latency time; that is, as soon as the program/erase suspend command (pes) has been i ssued. theref ore the device may still complete the operation before entering the suspend mode. the program suspend status should be consider ed valid when the p/e controller bit is high (fsr<7>=1). when a program/erase resume command (per) is issued the program suspend status bit returns low (fsr<2>=0) 6.5.7 protection status bit the bit 1 of the flag status register represents the protection status bit. it indicates that an erase or program operation has tried to modify the contents of a protected array sector, or that a modify operation has tried to access to a locked otp space. the protection status bit is related to all possible protection violations as follows: n the sector is protected by software protection mode 1 (spm1) lock registers, n the sector is protected by software protection mode 2 (spm2) block protect bits (standard spi status register), n an attempt to program otp when locked, n a write status register comm and (wrsr) on std spi status register when locked by the srwd bit in conjunctio n with the write protect (w /vpp) signal (hardw are protection mode). once set high, the protection st atus bit can only be reset low (fsr<1>=0) by a clear flag status register command (clfsr). if set high it should be reset before a new command is issued, otherwise the new command will appear to fail.
n25q032 - 3 v protection modes 45/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. 7 protection modes there are protocol-related and specific hardwa re and software protection modes. they are described below. 7.1 spi protocol-related protections this applies to all three protocols. the en vironments where non-volatile memory devices are used can be very noisy. no spi device can operate correctly in the presence of excessive noise. to help combat this, the n2 5q032 features the following data protection mechanisms: z power on reset and an internal timer (tvtw) can provide protection against inadvertent changes while the power supply is outside the oper ating specification. z program, erase, and write st atus register instructions are checked to ensure the instruction includes a number of clock pulses th at is a multiple of a byte before they are accepted for execution. z all instructions that modify data must be preceded by a write enable (wren) instruction to set the write enable latch (wel) bit. this bit is returned to its reset state by the following events (in extended spi protocol mode): ?power-up ? write disable (wrdi) instruction completion ? write status register (w rsr) instruction completion ? write to lock register (w rlr) instruction completion ? program otp (potp) instruction completion ? page program (pp) instruction completion ? dual input fast program (difp) instruction completion ? dual input extended fast program (diefp) instruction completion ? quad input fast program (qifp) instruction completion ? quad input extended fast progra m (qiefp) instruction completion ? subsector erase (sse) instruction completion ? sector erase (se) instruction completion ? bulk erase (be) instruction completion ? write non-volatile configuration re gister (wrnvcr) instruction completion this bit is also returned to its reset state after all the analogous events in dio-spi and qio- spi protocol modes.
protection modes n25q032 - 3 v 46/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. 7.2 specific hardware and software protection there are two software protected modes, spm1 and spm2, that can be combined to protect the memory array as required. the spm2 can be locked by hardware with the help of the w input pin. spm1 the first software protected mode (spm1) is managed by specific lo ck registers assigned to each 64 kbyte sector. the lock registers can be read and written using the read lock register (rdlr) and write to lock register (wrlr) instructions. in each lock register two bits control the protection of each sector: the write lock bit and the lock down bit. z write lock bit: the write lock bit determines whether the contents of the sector can be modified (using the program or erase instructions ). when the write lock bit is set to '1', the sector is write protected - any operations that attemp t to change the data in the sector will fail. when the write lock bit is reset to '0', the sect or is not write protected by the lock register, and may be modified. z lock down bit: the lock down bit provides a mechanism for protecting software data from simple hacking and malicious attack. when the lock down bit is set to '1', further modification to the write lock and lock down bits cannot be performed. a powerup is required before changes to these bits can be made. when the lock down bit is reset to '0', the write lock and lock down bits can be changed. the definition of the lock register bits is given in table 19.: lock register out . spm2 the second software protected mode (spm2) uses the block protect bits (bp2, bp1, bp0) and the top/bottom bit (tb bit) to allow part of the memory to be configured as read-only. see section 16: ordering information . as a second level of protection, the write protect signal (applied on the w /vpp pin) can freeze the status register in a read-only mode. in this mode, the block protect bits (bp2, bp1, bp0), the top/bottom (tb) bit, and the status register write disable bit (srwd) are protected. table 9. software protection truth table (sectors 0 to 63, 64 kbyte granularity) sector lock register protection status lock down bit write lock bit 0 0 sector unprotected from program/erase o perations, protection status reversible. 0 1 sector protected from program/erase operations, protection status reversible. 10 sector unprotected from pr ogram/erase operations. sector protection status cannot be changed except by a power-up. 11 sector protected from program/erase operations. sector protection status cannot be changed except by a power-up.
n25q032 - 3 v protection modes 47/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. table 10. protected area sizes, upper (tb bit = 0) status register content memory content tb bit bp2 bit bp1 bit bp0 bit p rotected area unprotected area 0000none all sectors 0001upper 64th sectors 0 to 62 0010upper 32th sectors 0 to 61 0011upper 16th sectors 0 to 59 0100upper eighth sectors 0 to 55 0101upper quarter sectors 0 to 47 0110upper half sectors 0 to 31 0111all sectors none table 11. protected area sizes, lower (tb bit = 1) status register content memory content tb bit bp2 bit bp1 bit bp0 bit p rotected area unprotected area 1000none all sectors 1 0 0 1 lower 64th sectors 1 to 63 1 0 1 0 lower 32nd sectors 2 to 63 1 0 1 1 lower 16th sectors 4 to 63 1 1 0 0 lower eighth sectors 8 to 63 1 1 0 1 lower quarter sectors 16 to 63 1 1 1 0 lower half sectors 32 to 63 1111all sectors none
memory organization n25q032 - 3 v 48/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. 8 memory organization the memory is organized as: z 4,194,304 bytes (8 bits each) z 64 sectors (64 kbytes each) z 1,024 subsectors (4 kbytes each) z 16,384 pages (256 bytes each) z 64 otp bytes located outside the main memory array each page can be individually programmed: bits are programmed from 1 to 0. the device is subsector eraseble, sector eraseble or bulk erasable but not page erasable: bits are erased from 0 to 1. figure 9. block diagram ai13722b hold s w/v pp control logic high voltage generator i/o shift register address register and counter 256 byte data buffer 256 bytes (page size) x decoder y decoder c dq0 dq1 status register 00000h 3fffffh 000ffh 64 otp bytes
n25q032 - 3 v memory organization 49/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. table 12. memory organization sector subsector address range sector subsector address range 63 1023 3ff000h 3fffffh 52 847 34f000h 34ffffh ... ... ... ... ... ... 1008 3f0000h 3f0fffh 832 340000h 340fffh 62 1007 3ef000h 3effffh 51 831 33f000h 33ffffh ... ... ... ... ... ... 992 3e0000h 3e0fffh 816 330000h 330fffh 61 991 3df000h 3dffffh 50 815 32f000h 32ffffh ... ... ... ... ... ... 976 3d0000h 3d0fffh 800 320000h 320fffh 60 975 3cf000h 3cffffh 49 799 31f000h 31ffffh ... ... ... ... ... ... 960 3c0000h 3c0fffh 784 310000h 310fffh 59 959 3bf000h 3bffffh 48 783 30f000h 30ffffh ... ... ... ... ... ... 944 3b0000h 3b0fffh 768 300000h 300fffh 58 943 3af000g 3affffh 47 767 2ff000h 2fffffh ... ... ... ... ... ... 928 3a0000h 3a0fffh 752 2f0000h 2f0fffh 57 927 39f000h 39ffffh 46 751 2ef000h 2effffh ... ... ... ... ... ... 912 390000h 390fffh 736 2e0000h 2e0fffh 56 911 38f000h 38ffffh 45 735 2df000h 2dffffh ... ... ... ... ... ... 896 380000h 380fffh 720 2d0000h 2d0fffh 55 895 37f000h 37ffffh 44 719 2cf000h 2cffffh ... ... ... ... ... ... 880 370000h 370fffh 704 2c0000h 2c0fffh 54 879 36f000h 36ffffh 43 703 2bf000h 2bffffh ... ... ... ... ... ... 864 360000h 360fffh 688 2b0000h 2b0fffh 53 863 35f000h 35ffffh 42 687 2af000h 2affffh ... ... ... ... ... ... 848 350000h 350fffh 672 2a0000h 2a0fffh
memory organization n25q032 - 3 v 50/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. 41 671 29f000h 29ffffh 30 495 1ef000h 1effffh ... ... ... ... ... ... 656 290000h 290fffh 480 1e0000h 1e0fffh 40 655 28f000h 28ffffh 29 479 1df000h 1dffffh ... ... ... ... ... ... 640 280000h 280fffh 464 1d0000h 1d0fffh 39 639 27f000h 27ffffh 28 463 1cf000h 1cffffh ... ... ... ... ... ... 624 270000h 270fffh 448 1c0000h 1c0fffh 38 623 26f000h 26ffffh 27 447 1bf000h 1bffffh ... ... ... ... ... ... 608 260000h 260fffh 432 1b0000h 1b0fffh 37 607 25f000h 25ffffh 26 431 1af000h 1affffh ... ... ... ... ... ... 592 250000h 250fffh 416 1a0000h 1a0fffh 36 591 24f000h 24ffffh 25 415 19f000h 19ffffh ... ... ... ... ... ... 576 240000h 240fffh 400 190000h 190fffh 35 575 23f000h 23ffffh 24 399 18f000h 18ffffh ... ... ... ... ... ... 560 230000h 230fffh 384 180000h 180fffh 34 559 22f000h 22ffffh 23 383 17f000h 17ffffh ... ... ... ... ... ... 544 220000h 220fffh 368 170000h 170fffh 33 543 21f000h 21ffffh 22 367 16f000h 16ffffh ... ... ... ... ... ... 528 210000h 210fffh 352 160000h 160fffh 32 527 20f000h 20ffffh 21 351 15f000h 15ffffh ... ... ... ... ... ... 512 200000h 200fffh 336 150000h 150fffh 31 511 1ff000h 1fffffh 20 335 14f000h 14ffffh ... ... ... ... ... ... 496 1f0000h 1f0fffh 320 140000h 140fffh table 12. memory organization (continued) sector subsector address range sector subsector address range
n25q032 - 3 v memory organization 51/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. 19 319 13f000h 13ffffh 8 143 8f000h 8ffffh ... ... ... ... ... ... 304 130000h 130fffh 128 80000h 80fffh 18 303 12f000h 12ffffh 7 127 7f000h 7ffffh ... ... ... ... ... ... 288 120000h 120fffh 112 70000h 70fffh 17 287 11f000h 11ffffh 6 111 6f000h 6ffffh ... ... ... ... ... ... 272 110000h 110fffh 96 60000h 60fffh 16 271 10f000h 10ffffh 5 95 5f000h 5ffffh ... ... ... ... ... ... 256 100000h 100fffh 80 50000h 50fffh 15 255 ff000h fffffh 4 79 4f000h 4ffffh ... ... ... ... ... ... 240 f0000h f0fffh 64 40000h 40fffh 14 239 ef000h effffh 3 63 3f000h 3ffffh ... ... ... ... ... ... 224 e0000h e0fffh 48 30000h 30fffh 13 223 df000h dffffh 2 47 2f000h 2ffffh ... ... ... ... ... ... 208 d0000h d0fffh 32 20000h 20fffh 12 207 cf000h cffffh 1 31 1f000h 1ffffh ... ... ... ... ... ... 192 c0000h c0fffh 16 10000h 10fffh 11 191 bf000h bffffh 0 15 0f000h 0ffffh ... ... ... ... ... ... 176 b0000h b0fffh 4 04000h 04fffh 10 175 af000h affffh 3 03000h 03fffh 2 02000h 02fffh 160 a0000h a0fffh 1 01000h 01fffh 9 159 9f000h 9ffffh 0 00000h 00fffh ... ... ... 144 90000h 90fffh table 12. memory organization (continued) sector subsector address range sector subsector address range
instructions n25q032 - 3 v 52/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. 9 instructions the device can work in three different protocols: extended spi, dio-spi and qio-spi. each protocol has a dedicated instruction set, and each instruction set features the same functionality: z read, program and erase the memory and the 64 byte otp area, z suspend and resume the program or erase operations, z read and modify all the registers, read the serial flash discovery parameter area (sfdp), and read the device id: please no te that in this ca se there is a small functionality difference among the single and the multiple i/o read id instructions. see section 9.2.1: multiple i/o re ad identification protocol and section 9.3.1: multiple i/o read identification (miordid) . the application can choose in every time of th e device life which protocol to use by setting the dedicated bits either in the non volatile configuration register or the volatile enhanced configuration register. note: in multiple spi protocols, all instructions, addresses, and data are parallel on two lines (dio- spi protocol) or four lines (qio-spi protocol). all instructions, addresses and data are shifted in and out of the device , most significant bit first. serial data input(s) is (are) sampled on the first rising edge of serial clock (c) after chip select (s ) is driven low. then, the one-byte instru ction code must be shifted in to the device, most significant bit first, on serial da ta input(s), each bit being latched on the rising edges of serial clock (c). instru ction code is shifted into the device just on dq0 in extended spi protocol, on dq0 and dq1 in dio-spi pr otocol and on dq0, dq1, dq2, and dq3 in qio-spi protocol. in standard mode every instruction sequence starts with a one-byte instruction code. depending on the instruction, th is might be followed by address bytes, or by data bytes, or by both or none. in xip modes only read operation and exit xip mode can be performed, and to read the memory content no instructions code are needed: the device directly receives addresses and after a configurable number of dummy clock cycles, it outputs the required data. 9.1 extended sp i instructions in extended spi protocol instruction set the inst ruction code is always shifted into the device just on dq0 pin, while depending on the instruction addresses and input/output data can run on single, two or four wires. in the case of a read instructions data by tes (read), read data bytes at higher speed (fast_read), dual output fast read (dofr), dual input/output fast read (diofr), quad output fast read (qofr), quad inpu t/output fast read (qiofr), read otp (rotp), read lock registers (rdlr), read status register (rdsr), read flag status register (rfsr), read nv configuration regi ster (rdnvcr), read vo latile configuration register (rdvcr), read volat ile enhanced configuration regi ster (rdvecr), read serial flash discovery parameter (rdsfdp), and read identification (rdi d) instruction, the shifted-in instruction sequence is followe d by a data-out sequence. chip select (s ) can be driven high after any bit of the data-out sequence is being shifted out.
n25q032 - 3 v instructions 53/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. in the case of a page program (pp), program otp (potp), dual input fast program (difp), dual input extended fast program (diefp), quad input fast program (qifp), quad input extended fast program (qiefp), subsector erase (sse), sector erase (se), bulk erase (be), write status register (wrsr) , clear flag status register (clfsr), write to lock register (wrlr), write configur ation register (wrvcr), write enhanced configuration register (wrvecr), write nv configuration regi ster (wrnvcr), write enable (wren) or write disable (w rdi) instruction, chip select (s ) must be driven high exactly at a byte boundary, otherwise the instru ction is rejected, and is not executed. that is, chip select (s ) must driven high when the number of clock pulses after chip select (s ) being driven low is an exact multiple of eight. all attempts to access the memory array are ignored during: ? write status register cycle ? write non volatile configuration register ? program cycle ? erase cycle the following continue unaffected, with one exception: ? internal write status register cycle, ? write non volatile configuration register, ? program cycle, ? erase cycle the only exception is the prog ram/erase suspend in struction (pes), that can be used to pause all the program and the erase cycles except for: ? program otp (potp), ? bulk erase, ? write status register, ? write non volatile configuration register. the suspended program or erase cycle can be resumed by the program/erase resume instruction (per). during the program/erase cycles, the pollin g instructions (both on the status register and on the flag status register) are also accepted to allow the application to check the end of the internal modify cycles. note: these polling instruct ions don't affect the in ternal cycles performing.
instructions n25q032 - 3 v 54/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. table 13. instruction set: extended spi protocol (page 1 of 2) instruction description one-byte instruction code (bin) one-byte instruction code (hex) address bytes dummy clock cycle data bytes rdid read identification 1001 111x 9eh / 9fh 0 0 1 to 20 read read data bytes 0000 0011 03h 3 0 1 to fast_read read data bytes at higher speed 0000 1011 0bh 3 8 (1) 1 to rdsfdp read serial flash discovery parameter 01011010 5ah 3 8 (1) 1 to dofr dual output fast read 0011 1011 3bh 3 8 (1) 1 to diofr dual input/output fast read 1011 1011 bb 3 8 (1) 1 to qofr quad output fast read 0110 1011 6bh 3 8 (1) 1 to qiofr quad input/output fast read 1110 1011 ebh 3 10 (1 1 to rotp read otp (read of otp area) 0100 1011 4bh 3 8 (1) 1 to 65 wren write enable 0000 0110 06h 0 0 0 wrdi write disable 0000 0100 04h 0 0 0 pp page program 0000 0010 02h 3 0 1 to 256 difp dual input fast program 1010 0010 a2h 3 0 1 to 256 diefp dual input extended fast program 1101 0010 d2h 3 0 1 to 256 qifp quad input fast program 0011 0010 32h 3 0 1 to 256 qiefp quad input extended fast program 0001 0010 12h 3 0 1 to 256 potp program otp (program of otp area) 0100 0010 42h 3 0 1 to 65 sse subsector erase 0010 0000 20h 3 0 0 se sector erase 1101 1000 d8h 3 0 0 be bulk erase 1100 0111 c7h 0 0 0 per program/erase resume 0111 1010 7ah 0 0 0 pes program/erase suspend 0111 0101 75h 0 0 0 rdsr read status register 0000 0101 05h 0 0 1 to wrsr write status register 0000 0001 01h 0 0 1 rdlr read lock register 1110 1000 e8h 3 0 1 to wrlr write to lock register 1110 0101 e5h 3 0 1 rfsr read flag status register 0111 0000 70h 0 0 1 to clfsr clear flag status register 0101 0000 50h 0 0 0 rdnvcr read nv configuration register 1011 0101 b5h 0 0 2 wrnvcr write nv configuration register 1011 0001 b1h 0 0 2 rdvcr read volatile configuration register 1000 0101 85h 0 0 1 to wrvcr write volatile configuration register 1000 0001 81h 0 0 1
n25q032 - 3 v instructions 55/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. 9.1.1 read identification (rdid) the read identification (rdid) instruction allo ws to read the device identification data: ? manufacturer identification (1 byte) ? device identification (2 bytes) ? a unique id code (uid) (17 bytes, of which 14 are factory programmed the manufacturer identification is assigned by jedec, and has the value 20h. the device identification is assigned by the device manufa cturer, and indicates the memory type in the first byte (bah), and the memory capacity of the device in the second byte (16h). the uid is composed by 17 read only bytes, containing the length of the following data in the first byte (set to 10h), 2 bytes of extended device id (edid) to identify the specific device configuration (top, bottom or uniform architecture, hold or reset functionality), and 14 bytes of the optional customized factory da ta (cfd) content. the cfd bytes are factory programmed with specific data for each device. any read identification (rdid) instruction while an erase or program cycle is in progress, is not decoded, and has no effect on the cycle that is in progress. the device is first selected by driving chip select (s ) low. then, the 8-bit instruction code for the instruction is shifted in. after this, th e 24-bit device identification, stored in the memory, the 17 bytes of uid content will be shifte d out on serial data output (dq1). each bit is shifted out du ring the falling edge of serial clock (c). the instruction sequence is shown in figure 10. the read identification (rdid) instruction is terminated by driving chip select (s ) high at any time during data output. when chip select (s ) is driven high, the device is put in the standby powe r mode. once in the standby power mode, the device waits to be selected, so that it can receive, decode and execute instructions. rdvecr read volatile enhanced configuration register 0110 0101 65h 0 0 1 to wrvecr write volatile enhanced configuration register 0110 0001 61h 0 0 1 1. the number of dummy clock cycles is configurable by user table 13. instruction set: extended spi protocol (page 2 of 2) instruction description one-byte instruction code (bin) one-byte instruction code (hex) address bytes dummy clock cycle data bytes table 14. read identification data-out sequence manufacturer identification device identification uid memory type memory capacity edid+cfd length edid cfd 20h bah 16h 10h 2 bytes 14 bytes
instructions n25q032 - 3 v 56/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. figure 10. read identification instruction and data-out sequence 9.1.2 read data bytes (read) the device is first selected by driving chip select (s ) low. the instruction code for the read data bytes (read) instruction is followed by a 3-byte address (a23-a0), each bit being latched-in during the rising edge of serial clock (c). then the memory contents at that address are shifted out on serial data output (dq1), each bit being shifted out at a maximum frequency fr during the falling edge of serial clock (c). the first byte addressed can be at any locati on. the address is automatically incremented to the next higher address after each byte of data is shifted out. the whole memory can, therefore, be read with a single read data bytes (read) instruction. when the highest address is reached, the address counter rolls over to 000000h, allowing the read sequence to be continued indefinitely. the read data bytes (read) instruction is terminated by driv ing chip select (s ) high. chip select (s ) can be driven high at any time during data output. any read data bytes (read) instruction, while an erase or program cycle is in progress, is rejected without having any effects on the cycle that is in progress. table 15. extended device id table (first byte) bit 7 bit 6 bit 5 bit 4 bit 3 bit 2 bit 1 bit 0 reserved reserved reserved vcr xip bit setting: 0 = required, 1 = not required hold/reset function: 0 = hold, 1 = reset addressing: 0 = by byte, architecture: 00 = uniform, c dq0 s 2 13 456789101112131415 instruction 0 dq1 manufacturer identification high impedance msb device identification msb 15 14 13 3 2 1 0 16 17 18 28 29 30 31 msb uid
n25q032 - 3 v instructions 57/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. figure 11. read data bytes instruction and data-out sequence address bits a23 and a22 are ?don?t care.? 9.1.3 read data bytes at higher speed (fast_read) the device is first selected by driving chip select (s ) low. the instruction code for the read data bytes at higher speed (fast_read) instru ction is followed by a 3-byte address (a23- a0) and a configurable number of dummy clo ck cycles, each bit being latched-in during the rising edge of serial clock (c). then the memory contents, at that address, are shifted out on serial data output (dq1) at a maximum frequency fc, during the falling edge of serial clock (c). the first byte addressed can be at any locati on. the address is automatically incremented to the next higher address after each byte of data is shifted out. the whole memory can, therefore, be read with a single read data bytes at higher speed (fast_read) instruction. when the highest address is re ached, the address counter rolls over to 000000h, allowing the read sequence to be continued indefinitely. the read data bytes at higher speed (fast_ read) instruction is terminated by driving chip select (s ) high. chip select (s ) can be driven high at any time during data output. any read data bytes at higher speed (fast_read) instruction, while an erase or program cycle is in progress, is rejected without having any effects on the cycle that is in progress. c dq0 s dq1 23 2 1 345678910 2829303132333435 2221 3210 36 37 38 76543 1 7 0 high impedance data out 1 instruction 24-bit address* 0 msb msb 2 39 data out 2
instructions n25q032 - 3 v 58/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. figure 12. read data bytes at higher speed instruction and data-out sequence *address bits a23 and a22 are ?don?t care.? 9.1.4 read serial fl ash discovery parameter the read serial flash discovery parameter (rds fdp) instruction allows reading the serial flash discovery parameter area (sfdp). this sfdp area is composed of 2048 read-only bytes containing operating characteristics and vendor specific information. the sfdp area is factory programmed. note: data to be written to the sfdp area is in definition phase. if the sfdp area is blank, the device is shipped with all the sfdp bytes at ffh. if only a portion of the sfdp area is written to, the portion not used is shipped with bytes in erased state (ffh). the instruction sequence for rdsfdp has the same structure as that of a fast read instruction. first, the device is selected by driving chip select (s) low. next, the 8-bit instruction code (5ah) and the 24-bit address are shifted in, followed by a configurable number of dummy clock cycles. therefore, the entire sfdp area can be read with a single rdsfdp instruction. when the highest address (7ffh) is reached, the address counter rolls over to 000h, allowing the read sequence to be continued indefinitely. c dq0 s dq1 23 2 1 345678910 28293031 2221 3210 high impedance instruction 24-bit address* 0 c dq0 s dq1 32 33 34 36 37 38 39 40 41 42 43 44 45 46 765432 0 1 data out 1 dummy cycles msb 7 6543210 data out 2 msb msb 7 47 765432 0 1 35
n25q032 - 3 v instructions 59/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. the bytes of sfdp content are shifted out on the serial data output (dq1) starting from the specified address. each bit is shifted out during the falling edg e of serial clock (c). the read sfdp instruction is terminated by driving chip select (s) high at any time during data output. any read serial flash discovery parameter (rds fdp) instruction issued while an erase or program cycle is in progress, is rejected without having any effect on the cycle that is in progress. figure 13. read serial flash discovery sequence *address bits a[23:11] are ?don?t care.? 9.1.5 dual output fast read (dofr) the dual output fast read (dofr) instruction is very similar to th e read data bytes at higher speed (fast_read) instruction, except that the data are shifted out on two pins (pin dq0 and pin dq1) instead of only one. ou tputting the data on two pins instead of one doubles the data transfer bandwidth compared to the read data bytes at higher speed (fast_read) instruction. the device is first selected by driving chip select (s ) low. the instruction code for the dual output fast read instruction is followed by a 3-byte address (a23-a0) and a configurable number of dummy clock cycles, each bit being latched-in during the rising edge of serial clock (c). then the memory contents, at that address, are shifted out on dq0 and dq1 at a maximum frequency fc, during the falling edge of serial clock (c). the first byte addressed can be at any locati on. the address is automatically incremented to the next higher address after each byte of data is shifted out on dq0 and dq1. the whole memory can, therefore, be read with a single dual output fast read (dofr) instruction. c dq0 s dq1 23 2 1 345678910 28293031 2221 3210 high impedance instruction 24-bit address* 0 c dq0 s dq1 32 33 34 36 37 38 39 40 41 42 43 44 45 46 765432 0 1 data out 1 dummy cycles msb 7 6543210 data out 2 msb msb 7 47 765432 0 1 35
instructions n25q032 - 3 v 60/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. when the highest address is reached, the addres s counter rolls over to 00 0000h, so that the read sequence can be continued indefinitely. figure 14. dual output fast read instruction sequence *address bits a23 and a22 are ?don?t care.? 9.1.6 dual i/o fast read the dual i/o fast read (diofr) instruction is very similar to the dual output fast read (dofr), except that the address bits are shif ted in on two pins (pin dq0 and pin dq1) instead of only one. 2 1 3 4 5 6 7 8 9 10 28 29 30 31 0 23 22 21 3 2 1 0 mode 3 mode 2 c dq0 s dq1 high impedance instruction *24-bit address c dq0 s dq1 32 33 34 36 37 38 39 40 41 42 43 44 45 46 753175 1 3 data out 1 dummy cycles msb 7 531 7531 msb msb 47 6420 64 0 2 35 642064 0 2 msb msb data out 2 data out 3 data out n
n25q032 - 3 v instructions 61/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. figure 15. dual i/o fast read instruction sequence *address bits a23 and a22 are ?don?t care.? 9.1.7 quad output fast read the quad output fast read (qofr) instruction is very similar to the dual output fast read (dofr) instruction, except that the data are shifted out on four pins (pin dq0, pin dq1, pin w /vpp/dq2 and pin hold /dq3 (1) instead of only two. outputting the data on four pins instead of one doubles the data transfer bandwidth compared to the dual output fast read (dofr) instruction. the device is first selected by driving chip select (s ) low. the instruction code for the quad output fast read instruction is followed by a 3-byte address (a23-a0) and a configurable number of dummy clock cycles, each bit being latched-in during the rising edge of serial clock (c). then the memory contents, at that a ddress, are shifted out on pin dq0, pin dq1, pin w /vpp/dq2 and pin hold /dq3 (1) at a maximum frequency fc, during the falling edge of serial clock (c). the first byte addressed can be at any locati on. the address is automatically incremented to the next higher address after each byte of data is shifted out on pin dq0, pin dq1, pin w /vpp/dq2 and pin hold /dq3 (1). the whole memory c an, therefore, be read with a single quad output fast read (qofr) instruction. when the highest address is reached, the addres s counter rolls over to 00 0000h, so that the read sequence can be continued indefinitely. note: reset functionality is available instead of hold in devices with a dedicated part number. see section 16: ordering information . 2 1 345678910 11 12 13 14 0 14 12 10 8 mode 3 mode 0 c dq0 s dq1 instruction c dq0 s dq1 23 24 25 27 28 29 30 31 32 33 34 35 36 37 io switches from input to output 38 26 753175 1 3 7 531 6420 7531 64 0 2 642064 0 2 15 16 17 18 19 20 23 21 19 17 15 13 11 9 7531 22 20 18 16 6420 *24-bit address dummy cycles 39 7 6 byte 1 byte 3 byte 2 byte 4
instructions n25q032 - 3 v 62/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. figure 16. quad output fast read instruction sequence *address bits a23 and a22 are ?don?t care.? 9.1.8 quad i/o fast read the quad i/o fast read (qiofr) instruction is very similar to the quad output fast read (qofr), except that the address bits are shifted in on four pins (pin dq0, pin dq1, pin w /vpp/dq2 and pin hold /dq3 (1)) instead of only one. note: reset functionality is available instead of hold in devices with a dedicated part number. see section 16: ordering information . figure 17. quad input/ output fast read instruction sequence *address bits a23 and a22 are ?don?t care.? 2 1 345678910 11 30 0 mode 3 mode 0 c dq0 s instruction 31 32 42 39 40 41 23 22 21 20 40 0 4 4 44 43 45 byte 1 51 1 5 5 73 3 7 7 6 22 6 6 byte 2 dummy (ex.: 10) io switches from input to output dq1 don?t care dq2 don?t care dq3 ?1? 10 *24-bit address 2 1 345678910 11 12 13 14 0 mode 3 mode 0 c dq0 s instruction 15 16 24 21 22 23 40 20 16 12 8 40 0 4 4 26 25 27 51 21 17 13 9 dq1 don?t care byte 1 51 1 5 5 73 3 7 7 73 23 19 15 11 6 22 6 6 62 22 18 14 10 dq2 don?t care byte 2 dummy (ex.: 10) *24-bit address dq3 ?1? io switches from input to output
n25q032 - 3 v instructions 63/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. 9.1.9 read otp (rotp) the device is first selected by driving chip select (s ) low. the instruction code for the read otp (rotp) instruction is followed by a 3- byte address (a23- a0) and a configurable number of dummy clock cycles. ea ch bit is latched in on the rising edge of serial clock (c). then the memory contents at that address are shifted out on serial data output (dq1). each bit is shifted out at the maximum frequenc y, fcmax, on the falling edge of serial clock (c). the address is automatically incremented to the next higher address after each byte of data is shifted out. there is no rollover mechanism with the read ot p (rotp) instruction. this means that the read otp (rotp) instruction mu st be sent with a maximum of 65 bytes to read. all other bytes outside the otp area are ?don?t care.? the read otp (rotp) instruction is terminated by driving chip select (s ) high. chip select (s ) can be driven high at any time during data output. any read otp (rotp) instruction issued while an erase or program cycl e is in progress, is rejected without having any effect on the cycle that is in progress. figure 18. read otp instruction and data-out sequence c dq0 s dq1 23 2 1 345678910 28293031 22 21 3 2 1 0 high impedance instruction 24-bit address 0 c dq0 s dq1 32 33 34 36 37 38 39 40 41 42 43 44 45 46 765432 0 1 data out 1 dummy cycles msb 7 6543210 data out n msb msb 7 47 765432 0 1 35
instructions n25q032 - 3 v 64/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. 9.1.10 write enable (wren) the write enable (wren) instruction se ts the write enable latch (wel) bit. the write enable latch (wel) bit must be set prior to every program or erase instruction: page program (pp), dual input fast program (difp), dual input extended fast program (diefp), quad input fast program (qifp), quad input extended fast program (qiefp), program otp (potp), write to lock regist er (wrlr), subsector erase (sse), sector erase (se), bulk erase (be), write status re gister (wrsr), write vo latile configuration register (wrvcr), write volatile enhanced configuration register (wrvecr) and write nv configuration regist er (wrnvcr) instruction. the write enable (wren) instruction is entered by driving chip select (s ) low, sending the instruction code, and then driving chip select (s ) high. at the end of the por sequence the wel bit is low, so the next modify instruction can be accepted. figure 19. write enable instruction sequence 9.1.11 write disable (wrdi) the write disable (wrdi) instruction resets the write enable latch (wel) bit. the write disable (wrdi) instruction is ente red by driving chip select (s ) low, sending the instruction code, and then driv ing chip select (s ) high. c dq0 ai13731 s dq1 2 1 34567 high impedance 0 instruction
n25q032 - 3 v instructions 65/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. the write enable latch (wel) bit is reset under the fo llowing conditions: z power-up z write disable (wrdi) instruction completion z write status register (wrs r) instruction completion z write to lock register (wrlr) instruction completion z write non volatile configuration regi ster (wrnvcr) instruction completion z write volatile configuration regist er (wrvcr) instruction completion z write volatile enhanced configuration re gister (wrvecr) instruction completion z page program (pp) instruction completion z dual input fast program (d ifp) instruction completion z dual input extended fast progra m (diefp) instruction completion z quad input fast program (qif p) instruction completion z quad input extended fast progra m (qiefp) instruction completion z program otp (potp) instruction completion z subsector erase (sse) instruction completion z sector erase (se) instruction completion z bulk erase (be) in struction completion figure 20. write disable instruction sequence 9.1.12 page program (pp) the page program (pp) instruction allows bytes to be programmed in the memory (changing bits from 1 to 0). before it can be accepted, a write enable (wren) instruction must previously have been executed. after the write enable (wren) instruction has been decoded, the device sets the write enable latch (wel). the page program (pp) in struction is entered by driving chip select (s ) low, followed by the instruction code, three address bytes, and at least one data byte on serial data input (dq0). if the 8 least significant address bits (a7- a0) are not all zero, all transmitted data that go beyond the end of the current page are programmed from the start address of the same page (from the address whose 8 least significant bits (a7-a0) are all zero). chip select (s ) must be driven low for the entire duration of the sequence. if more than 256 bytes are sent to the device, previously latched data are discarded and the last 256 data bytes are guaranteed to be prog rammed correctly within the same page. if less c dq0 s dq1 2 1 34567 high impedance 0 instruction
instructions n25q032 - 3 v 66/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. than 256 data bytes are sent to device, they are correctly programmed at the requested addresses without having any effects on the other bytes of the same page. for optimized timings, it is recommended to use the page program (pp) instruction to program all consecutive targeted bytes in a single sequence versus using several page program (pp) sequences with each containing only a few bytes. see table 31.: ac characteristics . chip select (s ) must be driven high after the eighth bi t of the last data byte has been latched in, otherwise the page program (pp) instruction is not executed. as soon as chip select (s ) is driven high, the self-tim ed page program cycle (whose duration is tpp) is initiated. while the page pr ogram cycle is in progress, the status register and the flag status register may be read to chec k if the internal modify cycle is finished. at some unspecified time before the cycle is completed, the write enable latch (wel) bit is reset. a page program (pp) instruction applied to a pa ge which is protected by the block protect (bp2, bp1, bp0 and tb) bits is not executed. page program cycle can be paused by mean of program/erase sus pend (pes) instruction and resumed by mean of program/erase resume (per) instruction. figure 21. page program instruction sequence *address bits a23 and a22 are ?don?t care.? c dq0 s 42 41 43 44 45 46 47 48 49 50 52 53 54 55 40 c dq0 s 23 2 1 3 4 5 6 7 8 9 10 28 29 30 31 32 33 34 35 22 21 3 2 1 0 36 37 38 instruction *24-bit address 0 765432 0 1 data byte 1 39 51 765432 0 1 data byte 2 765432 0 1 data byte 3 data byte 256 2079 2078 2077 2076 2075 2074 2073 765432 0 1 2072 msb msb msb msb msb
n25q032 - 3 v instructions 67/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. 9.1.13 dual input fast program (difp) the dual input fast program (difp) instruction is very similar to the page program (pp) instruction, except that the data are entered on two pins (pin dq0 and pin dq1) instead of only one. inputting the data on two pins instead of one doubles the data transfer bandwidth compared to the page program (pp) instruction. the dual input fast program (difp) instruction is enter ed by driving chip select (s ) low, followed by the instruction code, three address bytes and at least one data byte on serial data input (dq0). if the 8 least significant address bits (a7-a0) are not all zero, all transmitted data that go beyond the end of the current page are programmed from the start address of the same page (from the address whose 8 least significant bits (a7-a0) are all zero). chip select (s ) must be driven low for the entire duration of the sequence. if more than 256 bytes are sent to the device, previously latched data are discarded and the last 256 data bytes are guaranteed to be prog rammed correctly within the same page. if less than 256 data bytes are sent to device, they are correctly programmed at the requested addresses without having any effects on the other bytes in the same page. for optimized timings, it is recommended to use the dual input fast program (difp) instruction to program all consecutive targeted bytes in a single sequence rather to using several dual input fast program (difp) sequences each containing only a few bytes. see table 31.: ac characteristics . chip select (s ) must be driven high after the eighth bi t of the last data byte has been latched in, otherwise the dual input fast pr ogram (difp) instruction is not executed. as soon as chip select (s ) is driven high, the self-tim ed page program cycle (whose duration is tpp) is init iated. while the dual in put fast program (difp) cycle is in progress, the status register and the flag status register may be read to check if the internal modify cycle is finished. at some unspecified time be fore the cycle is completed, the write enable latch (wel) bit is reset. a dual input fast program (difp) instruction ap plied to a page that belongs to a hardware or software protected sector is not executed. dual input fast program cycle can be paused by mean of program/erase suspend (pes) instruction and resumed by mean of program/erase resume (per) instruction.
instructions n25q032 - 3 v 68/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. figure 22. dual input fast program instruction sequence *address bits a23 and a22 are ?don?t care.? 9.1.14 dual input extended fast program the dual input extended fast program (diefp) in struction is very similar to the dual input fast program (difp), except that the address bi ts are shifted in on two pins (pin dq0 and pin dq1) instead of only one. c dq0 s 23 2 1 345678910 28293031 2221 3210 instruction *24-bit address 0 c dq0 s 34 33 35 36 37 38 39 40 41 42 44 45 46 47 32 43 642064 0 2 642064 0 2 6420 msb msb msb dq1 high impedance 64 2 0 dq1 7531 1 75 3 75 3 7 5 msb 31 1 msb 7531 75 3 1 msb data in 1 data in 4 data in 5 data in 256 data in 3 data in 2
n25q032 - 3 v instructions 69/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. figure 23. dual input extended fast program instruction sequence *address bits a23 and a22 are ?don?t care.? 9.1.15 quad i nput fast program the quad input fast program (qif p) instruction is very sim ilar to the dual input fast program (difp) instruction, except that the data are entered on four pins (pin dq0, pin dq1, pin w /vpp/dq2 and pin hold/ ( dq3) instead of only two. inputting the data on four pins instead of two doubles the data transfer bandwidth compared to the dual input fast program (difp) instruction. the quad input fast program (qifp) instruction is entered by driving chip select (s ) low, followed by the instruction code, three address bytes on serial data input (dq0), and at least one data byte on serial data i/os (dq0, dq1, dq2, dq3). if the 8 least significant address bits (a7-a0) are not all zero, all transmitted data that go beyond the end of the current page are programmed from the start address of the same page (from the address whose 8 least significant bits (a7-a0) are all zero). chip select (s ) must be driven low for the entire duration of the sequence. if more than 256 bytes are sent to the device, previously latched data are discarded and the last 256 data bytes are guaranteed to be prog rammed correctly within the same page. if less than 256 data bytes are sent to device, they are correctly programmed at the requested addresses without having any effects on the other bytes in the same page. for optimized timings, it is recommended to use the quad input fast program (qifp) instruction to program all consecutive targeted bytes in a single sequence rather to using 2 1 345678910 11 12 13 14 0 14 12 10 8 mode 3 mode 0 c dq0 s dq1 instruction c dq0 s dq1 21 22 23 25 26 27 28 29 30 31 32 33 34 35 36 24 7531 75 1 3 7 531 6420 642064 0 2 15 16 17 18 19 20 23 21 19 17 15 13 11 9 7531 22 20 18 16 6420 24-bit address 37 msb 38 6420 7531 msb msb msb data in 4 data in 1 data in 3 data in 2 64 0 2 7531 msb data in 256
instructions n25q032 - 3 v 70/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. several quad input fast program (qifp) sequences each containing only a few bytes see table 31.: ac characteristics . chip select (s ) must be driven high after the eighth bi t of the last data byte has been latched in; otherwise, the quad input fast pr ogram (qifp) instruction is not executed. as soon as chip select (s ) is driven high, the self-tim ed page program cycle (whose duration is tpp) is initiated. wh ile the quad input fast program (qifp) cycle is in progress, the status register may be read to check the value of the write in progress (wip) bit. the write in progress (wip) bit is 1 during the self-t imed page program cycle, and 0 when it is completed. at some unspecified time before th e cycle is completed, the write enable latch (wel) bit is reset. alternately, it is possible to read the flag status register to check if the internal modify cycle is finshed. a quad input fast program (qifp) instruction applied to a page that belongs to a hardware or software protected sector is not executed. a quad input fast program cycle can be paused by mean of program/erase suspend (pes) instruction and resumed by mean of program/erase resume (per) instruction. figure 24. quad input fast program instruction sequence *address bits a23 and a22 are ?don?t care.? 9.1.16 quad input ex tended fast program the quad input extended fast program (qiefp) instruction is very similar to the quad input fast program (qifp), except that the address bits are shifted in on four pins (pin dq0, pin dq1, pin w /vpp/dq2 and pin hold /dq3) instead of only one. dq0 s dq1 23 22 21 51 5151 instruction don?t care msb 51 1 5 73 3 7 dq3 73 62 2 6 dq2 62 6262 don?t care ?1? data in 2 1 345678910 0 37 34 35 36 28 29 30 31 32 33 39 38 40 c 42 41 43 32 1 04 0 4 0 4 0 44 0 04 0 51 62 msb msb msb msb msb 73 7373 don?t care *24-bit address data in data in 2 13 456 *address bit a23 is dont care.
n25q032 - 3 v instructions 71/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. figure 25. quad input extended fast program instruction sequence *address bits a23 and a22 are ?don?t care.? 9.1.17 program otp instruction (potp) the program otp instruction (potp) is used to program at most 64 bytes to the otp memory area (by changing bits from 1 to 0, only). before it can be accepted, a write enable (wren) instruction must previously have be en executed. after the write enable (wren) instruction has been decoded, the device sets the write enable latch (wel) bit. the program otp instruction is en tered by driving chip select (s ) low, followed by the instruction opcode, three address bytes and at least one data byte on serial data input (dq0). chip select (s ) must be driven high after the eighth bit of the last data byte has been latched in, otherwise the program ot p instruction is not executed. there is no rollover mechanism with the progra m otp (potp) instruction. this means that the program otp (potp) instruction must be sent with a maximum of 65 bytes to program, once all 65 bytes have been latched in, any following byte will be discarded. as soon as chip select (s ) is driven high, the self-tim ed page program cycle (whose duration is tpp) is initiated. while the program otp cycle is in progress, the status register may be read to check the value of the write in progress (wip) bit. th e write in progress (wip) bit is 1 during the self-timed program otp cycle, and it is 0 when it is completed. at some unspecified time before the cycle is co mplete, the write enable latch (wel) bit is reset. alternately, it is possible to read the flag status register to check if the internal modify cycle is finished. bit 0 of the otp control byte, that is byte 64 , is used to permanently lock the otp memory array. z when bit 0 of byte 64 = '1', the 64 bytes of the otp memory array can be programmed. z when bit 0 of byte 64 = '0', the 64 bytes of the otp memory array are read-only and cannot be programmed anymore. once a bit of the otp memory has been programmed to '0', it can no longer be set to '1'. dq0 s dq1 instruction don?t care msb dq3 dq2 don?t care ?1? data in 2 1 345678910 0 c 20 17 18 19 11 12 13 14 15 16 22 21 23 25 24 26 msb msb msb msb msb *24-bit address data in data in 2 134 5 6 27 20 16 12 8 04 40 4 0 4 0 4 0 44 0 04 0 26 62 6 2 6 2 6 2 66 2 26 2 15 51 5 1 5 1 5 1 55 1 15 1 21 17 13 9 22 18 14 10 23 19 15 37 73 7 3 7 3 7 3 77 3 37 3 11 7 msb
instructions n25q032 - 3 v 72/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. therefore, as soon as bit 0 of byte 64 (contro l byte) is set to '0', the 64 bytes of the otp memory array become read-only in a permanent way. any program otp (potp) instruct ion issued while an erase or program is in progress is rejected without having any effect on the cycle that is in progress. a program otp cycle cannot be paused by a program/ erase suspend (pes) instruction. figure 26. program otp instruction sequence c dq0 s 42 41 43 44 45 46 47 48 49 50 52 53 54 55 40 c dq0 s 23 2 1 345678910 2829303132333435 2221 3210 36 37 38 instruction 24-bit address 0 765432 0 1 data byte 1 39 51 765432 0 1 data byte 2 765432 0 1 data byte 3 data byte n 765432 0 1 msb msb msb msb msb
n25q032 - 3 v instructions 73/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. figure 27. how to permanently lock the otp bytes 9.1.18 subsector erase (sse) the subsector erase (sse) instruction sets to '1' (ffh) all bits inside the chosen subsector. before it can be accepted, a write enable (wren) instruction must previously have been executed. after the write enable (wren) instru ction has been decoded, the device sets the write enable latch (wel). the subsector erase (sse) instruction is entered by driving chip select (s ) low, followed by the instruction code, and three address by tes on serial data input (dq0). any address inside the subsector is a valid address for the subsector erase (sse) instruction. chip select (s ) must be driven low for the entire duration of the sequence. chip select (s ) must be driven high after the eighth bit of the last address byte has been latched in, otherwise the subsector erase (sse) instruction is not executed. as soon as chip select (s ) is driven high, the self-timed subs ector erase cycle (whose duration is tsse) is initiated. while the su bsector erase cyc le is in progress, the status register may be read to check the value of the write in pr ogress (wip) bit. the wr ite in progress (wip) bit is 1 during the self-timed subsector erase cycle, and is 0 when it is completed. at some unspecified time before the cycle is complete, the write enable latch (wel) bit is reset. alternately, it is possible to read the flag status register to check if the internal modify cycle is finished. a subsector erase (sse) instruction issued to a sector that is hardware or software protected, is not executed. any subsector er ase (sse) instruction, while an erase or program cycle is in progress, is rejected without having any effects on the cycle that is in progress. a subsector erase cycle can be paused by a pr ogram/erase suspend (pes) instruction and resumed by a program/erase resume (per) instruction. byte 0 byte 1 byte 2 byte 64 byte 63 x x x x x x x bit 0 otp control byte 64 data bytes bit 1 to bit 7 are not programmable when bit 0 = 0 the 64 otp bytes become read only ai13587
instructions n25q032 - 3 v 74/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. figure 28. subsector erase instruction sequence *address bits a23 and a22 are ?don?t care.? 9.1.19 sector erase (se) the sector erase (se) in struction sets to '1' (ffh) all bits inside the chosen sector. before it can be accepted, a write enable (wren) instru ction must previously have been executed. after the write enable (wren) instruction ha s been decoded, the device sets the write enable latch (wel). the sector erase (se) instruction is entered by drivin g chip select (s ) low, followed by the instruction code, and three address bytes on se rial data input (dq0). any address inside the sector is a valid addre ss for the sector erase (se) instruction. chip select (s ) must be driven low for the entire duration of the sequence. chip select (s ) must be driven high after the eighth bit of the last address byte has been latched in; otherwise, the sector erase (se) in struction is not executed. as soon as chip select (s ) is driven high, the self-timed sector er ase cycle (whose duration is tse) is initiated. while the sector erase cycle is in progress, the status register may be read to check the value of the write in progress (wip) bit. the write in progress (wip) bit is 1 during the self-timed sector erase cycle, and is 0 when it is completed. at some unspecified time before the cycle is completed, the write en able latch (wel) bit is reset. alternately, it is possible to read the flag status register to check if the internal modify cycle is finished. a sector erase (se) instruction applied to a page that is hardware or software protected is not executed. a sector erase cycle can be p aused by mean of program/erase suspend (pes) instruction and resumed by mean of program/erase resume (per) instruction. figure 29. sector erase instruction sequence *24 bit address c dq0 s 2 1 3456789 293031 instruction 0 23 22 20 1 msb *24 bit address c dq0 s 2 1 3456789 293031 instruction 0 23 22 2 0 1 msb
n25q032 - 3 v instructions 75/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. 9.1.20 bulk erase (be) the bulk erase (be) instruction sets all bits to '1' (ffh). before it can be accepted, a write enable (wren) instruction must previously have been executed. after the write enable (wren) instruction has been decoded, the device sets the write enable latch (wel). the bulk erase (be) instruction is entered by driving chip select (s ) low, followed by the instruction code on serial data input (dq0). chip select (s ) must be driven low for the entire duration of the sequence. chip select (s ) must be driven high after the eighth bi t of the instruction code has been latched in, otherwise the bulk erase instructio n is not executed. as soon as chip select (s ) is driven high, the self -timed bulk erase cycle (whose duration is tbe) is initiated. while the bulk erase cycle is in progress, the status re gister may be read to check the value of the write in progress (wip) bit. the write in progress (wip) bit is 1 during the self-timed bulk erase cycle, and is 0 when it is completed. at some unspecified time before the cycle is completed, the write enable latch (wel) bit is reset. the bulk erase (be) instruction is ignored if one or more sectors are hardware or software protected. the bulk erase (be) cycle cann ot be paused by a program erase suspend (pes) instruction. figure 30. bulk erase instruction sequence 9.1.21 program/erase suspend the program/erase suspend instruction allows the controller to interrupt a program or an erase instruction, in particular: sector eras e, subsector erase, page program, dual input page program, dual input extended page prog ram, quad input page program and quad input extended page program instructions can be suspended and resumed. note: bulk erase, write status register, write no n volatile configuration register, and program otp cannot be suspended. after a program/erase suspend instruction t he bit 2 of the flag status register is immediately set to 1 and, after a latency time, both the wip bit of the status register and the program/erase controller bit (not wip) of th e flag status register are cleared (to 0 and to 1 respectively). the suspended state is reset if a power-off is performed or after resume. after a sector erase instruction has been suspended, another er ase instruction is not allowed; however, it is possible to perform program and reading instructions on all the sectors except the one c dq0 ai13743 s 2 1 34567 0 instruction
instructions n25q032 - 3 v 76/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. whose erase cycle is suspended. any read inst ruction issued on this sector outputs don't care data. after a subsector erase instruction has been su spended, neither an erase instruction or a program instruction is allowed; only a read instruction is allowed on all sectors except the one containing the subsector whose erase cycl e is suspended. any read instruction issued on this sector outputs don't care data. after a program instruction has been suspended, neither a program instruction or an erase instructions is allowed; however, it is possi ble to perform a read instruction on all pages except the one whose program cycle is suspended. any read instruction issued on this page outputs don't care data. it's possible to nest a suspend instruction inside another suspended one just once, meaning that it's possible for example to send to the device an erase instruction, then suspend it, then send a program instruction and in the end suspend it as well. in this case, the next program/erase resume instruction resumes the more recent suspended modify cycle, and another progra m/erase resume instructio n is need to resume also the former modify cycle.
n25q032 - 3 v instructions 77/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. table 16. suspend parameters note: as shown here, the device can be in only one state at a time, such as standby or program. parameter condition typ max unit note erase to suspend sector erase or erase resume to erase suspend 700 s timing not internally controlled program to suspend program resume to program suspend 5 s timing not internally controlled sserase to suspend sub sector erase or sub sector erase resume to erase suspend 50 s timing not internally controlled suspend latency program 7 s any read instruction accepted sub sector erase 15 s any read instruction accepted erase 15 s any instruction accepted but se, sse, be, wrsr, wrnvcr, potp table 17. operations allowed / disallowed during device states operation device states and sector (same/other) in wh ich operation is allowed/disallowed (yes/no) standby state program state erase state (se/sse) subsector erase suspended state program suspended state erase suspended state sector sector sector sector sector sector same other same other same other same other same other same other all reads except rdsr / rfsr yes yes no no no no yes (1) yes yes yes yes (1) yes array program: pp / difp / qifp / diefp / qiefp yes yes no no no no no no no no no yes sector erase yes yes no no no no no no no no no no sub-sector erase yes yes no no no no no no no no no no wrlr / potp / be / wrsr / wrnvcr yes no no no no no wrvcr / wrvecr yes no no yes yes yes rdsr / rfsr yes yes yes yes yes yes program / erase suspend no yes yes no no no 1. the read operation is accepted but the data output is not guaranteed until the program or erase has completed.
instructions n25q032 - 3 v 78/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. 9.1.22 program/erase resume after a program/erase suspend instruction, a program/erase resume instruction is required to continue performing the suspended program or erase sequence. program/erase resume instruction is ignored if the device is not in a program/erase suspended status. the wip bit of the status register and program/erase controller bit (not wip) of the flag status register both switch to the busy state (1 and 0 respectively) after program/erase resume instruction until the program or erase sequence is completed. in this case the next program/erase resume instruction resumes the more recent suspended modify cycle, and another program/ erase resume instruction is needed to resume also the former modify cycle. 9.1.23 read status register (rdsr) the read status register (rdsr) instruction allows the status register to be read. the status register may be read at any time, ev en while a program, erase or write status register cycle is in progress. when one of these cycles is in progress, it is recommended to check the write in progress (wip) bit (or the pr ogram/erase controller bit of the flag status register) before sending a new instruction to the device. it is also possible to read the status register continuously, as shown here. figure 31. read status register instruction sequence 9.1.24 write status register (wrsr) the write status register (wrsr) instruction allows new values to be written to the status register. before it can be accepted, a write ena ble (wren) instruction must previously have been executed. after the write enable (wren) instruction has been decoded and executed, the device sets the write enable latch (wel). the write status register (wrsr) instruct ion is entered by driving chip select (s ) low, followed by the instruction code and the data byte on serial data input (dq0). the write status register (wrs r) instruction has no effect on b1 and b0 of the status register. chip select (s ) must be driven high after the eighth bi t of the data byte has been latched in. if not, the write status register (wrsr) instruct ion is not executed. as soon as chip select (s ) is driven high, the self-tim ed write status register cycl e (whose duration is tw) is c dq0 s 2 1 3456789101112131415 instruction 0 dq1 7 6543210 status register out high impedance msb 7 6543210 status register out msb 7
n25q032 - 3 v instructions 79/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. initiated. while the write status register cycle is in progress, the status register may still be read to check the value of the write in progress (wip) bit. the write in progress (wip) bit is 1 during the self-timed write status register cycl e, and is 0 when it is completed. when the cycle is completed, the write enable latch (wel) is reset. the write status register (wrsr) instruction allows the user to change the values of the block protect (bp2, bp1, bp0) bits, to define the size of the area that is to be treated as read-only, as defined in table 10.: protected area sizes, upper (tb bit = 0) and table 11.: protected area sizes, lower (tb bit = 1) . the write status register (wrsr) instruction also allows the user to set and reset the status register write disable (srwd) bit in accordance with the write protect (w /vpp) signal. the status register write disable (srwd) bit and write protect (w /vpp) signal allow the device to be put in the hardware protected mode (hpm). the write status register (wrsr) instruction is not executed once the hardware protected mode (hpm) is entered. figure 32. write status register instruction sequence when the status register write disable (srwd) bi t of the status register is 0 (its initial delivery state), it is possible to write to the status register provided that the write enable latch (wel) bit has previously been set by a write enable (wren) in struction, regardless of the whether write protect (w /vpp) is driven high or low. when the status register write disable (srwd) bi t of the status register is set to '1', two cases need to be considered, depending on the state of write protect (w /vpp): z if write protect (w /vpp) is driven high, it is possible to write to the status register provided that the write enable latch (wel ) bit has previously been set by a write enable (wren) instruction. z if write protect (w /vpp) is driven low, it is not possi ble to write to th e status register even if the write enable latch (wel) bit ha s previously been set by a write enable (wren) instruction (attempts to write to the status regist er are rejected, and are not accepted for execution). as a consequence, all the data bytes in the memory area that are software protected (spm2) by the block protect (bp2, bp1, bp0) bits and the top/bottom (t/b) bit of the status register , are also hardware protected against data modification. c dq0 s dq1 2 1 3456789101112131415 high impedance instruction status register in 0 765432 0 1 msb
instructions n25q032 - 3 v 80/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. regardless of the order of the two events, the hardware protected mode (hpm) can be entered in either of the following ways: z setting the status register write disable (srwd) bit after driving write protect (w /vpp) low z driving write protect (w /vpp) low after sett ing the status regi ster write disable (srwd) bit. the only way to exit the hardware protected mode (hpm) once entered is to pull write protect (w /vpp) high. if write protect (w /vpp) is permanently tied high, the hardware pr otected mode (hpm) can never be activated, and only the software pr otected mode (spm2), using the block protect (bp2, bp1, bp0) bits and the top/bottom (t/b) bits of the status register, can be used. 9.1.25 read lock register (rdlr) the device is first selected by driving chip select (s ) low. the instruction code for the read lock register (rdlr) instruct ion is followed by a 3-byte address (a23-a0) pointing to any location inside the concerned sector. each addres s bit is latched-in during the rising edge of serial clock (c). then the value of the lock register is shifted out on serial data output (dq1), each bit being shifted out, at a ma ximum frequency fc, during the falling edge of serial clock (c). the read lock register (rdlr) instruction is terminated by driving chip select (s ) high at any time during data output. any read lock register (rdlr) instruction, wh ile an erase, program or write cycle is in progress, is rejected without having any ef fects on the cycle that is in progress. table 18. protection modes w / vpp signal srwd bit mode write protection of the status register memory content protected area (1) unprotected area (1) 10 software protected (spm2) status register is writeable, if the wren instruction has set the wel bit. the values in the srwd, tb, bp2, bp1, and bp0 bits can be changed. protected against pp, difp, diefp, qifp, qiefp, sse, se and be instructions. ready to accept pp, difp, diefp, qifp, qiefp, sse, and se instructions. 00 11 01 hardware protected (hpm) status register is hardware write protected. the values in the srwd, tb, bp2, bp1 and bp0 bits cannot be changed pp, difp, diefp, qifp, qiefp, sse, se and be instructions. pp, difp, diefp, qifp, qiefp, sse, and se instructions. 1. as defined by the values in the block protect (tb, bp2 , bp1, bp0) bits of the status register, as shown in table 2: status register format .
n25q032 - 3 v instructions 81/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. figure 33. read lock register instruction and data-out sequence *address bits a23 and a22 are ?don?t care.? 9.1.26 write to lo ck register (wrlr) the write to lock register (wrlr) instruction allows bits to be changed in the lock registers. before it can be accepted, a write enable (wren) instruction must previously have been executed. after the write enable (wren) instruction has been decoded, the device sets the write enable latch (wel). the write to lock register (wrlr) instruct ion is entered by driving chip select (s ) low, followed by the instruction code, three address bytes (pointing to any address in the targeted sector and one data byte on serial da ta input (dq0). the instruction sequence is shown in figure 22. chip select (s ) must be driven high after the eighth bit of the data byte has been latched in, otherwise the write to lock register (wrlr) instruction is not executed. lock register bits are volatile, and therefore do not require time to be written. when the write to lock register (wrl r) instruction has been succ essfully executed, the write enable latch (wel) bit is reset after a delay time less than tshsl minimum value. any write to lock register (wrlr) instruction, while an erase or program cycle is in progress, is rejected without having any ef fects on the cycle that is in progress. c dq0 s dq1 23 2 1 3 4 5 6 7 8 9 10 28 29 30 31 32 33 34 35 22 21 3 2 1 0 36 37 38 76543 1 0 high impedance lock regist er out instruction *24-bit address 0 msb msb 2 39 table 19. lock register out (1) bit bit name value function b7-b2 reserved b1 sector lock down ?1? the write lock and lock down bits cannot be changed. once a ?1? is written to the lock down bit it cannot be cleared to ?0?, except by a power-up. ?0? the write lock and lock down bits can be changed by writing new values to them. b0 sector write lock ?1? program and erase operations in this se ctor will not be executed. the memory contents will not be changed. ?0? program and erase operations in this sect or are executed and will modify the sector contents. 1. values of (b1, b0) after power-up are defined in section 7: protection modes .
instructions n25q032 - 3 v 82/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. figure 34. write to lock register instruction sequence *address bits a23 and a22 are ?don?t care.? 9.1.27 read flag status register the read flag status register (rfsr) instruct ion allows the flag status register to be read. the status register may be read at any time, even while a program or erase is in progress. when one of these cycles is in pr ogress, it is recommended to check the p/e controller bit (not wip) bit before sending a new instruction to the device. it is also possible to read the flag register continuously, as shown here. figure 35. read flag status register instruction sequence 9.1.28 clear flag status register the clear flag status register (clfsr) instructio n reset the error flag status register bits (erase error bit, program error bit, vpp error bit, protection error bit). it is not necessary to set the wel bit before the clear flag status register instruction is executed. the wel bit will be unchanged after this command is executed. c dq0 s 23 2 1 345678910 2829303132333435 22 21 3 2 1 0 36 37 38 instruction *24-bit address 0 765432 0 1 lock regist er in 39 msb msb table 20. lock register in (1) 1. values of (b1, b0) after power-up are defined in section 7: protection modes . sector bit value all sectors b7-b2 ?0? b1 sector lock down bit value (refer to ta ble 19 ) b0 sector write lock bit value (refer to ta ble 19 ) c dq0 s 2 1 3456789101112131415 instruction 0 dq1 7 6543210 flag status register out high impedance msb 7 6543210 flag status register out msb 7
n25q032 - 3 v instructions 83/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. figure 36. clear flag status register instruction sequence 9.1.29 read nv c onfiguration register the read non volatile configuration register (rdnvcr) instruction allows the non volatile configuration register to be read. figure 37. read nv configurati on register instruction sequence 9.1.30 write nv c onfiguration register the write non volatile configuration register (wrnvcr) instruction allows new values to be written to the non volatile configuration register. before it can be accepted, a write enable (wren) instruct ion must previously have been executed. after the write enable (wren) instruction has been decoded and exec uted, the device sets the write enable latch (wel). the write non volatile configuration register (wrnvcr) instruction is entered by driving chip select (s ) low, followed by the instruction code and the data bytes on serial data input (dq0). chip select (s ) must be driven high after the 16th bit of the data bytes has been latched in. if not, the write non volatile configuration register (wrnvcr) instruction is not executed. as soon as chip select (s ) is driven high, the self-timed write nv configuration register cycle (whose duration is twrnvcr) is initiated. c dq0 s dq1 2 1 345678 high impedance instruction 0 msb c s dq0 2 1 3456789101112131415 instruction 0 dq1 7 6543210 nvcr out high impedance ls byte 15 14 13 12 11 10 9 8 nvcr out ms byte 16 17 18 19 20 21 22 23
instructions n25q032 - 3 v 84/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. while the write non volat ile configuration register cycle is in progress, it is possible to monitor the end of the process by polling status register write in progress (wip) bit or the flag status register program/erase controlle r bit. the write in progress (wip) bit is 1 during the self-timed write non volatile configur ation register cycle, and is 0 when it is completed. when the cycle is completed, the write enable latch (wel) is reset. the write non volatile configuration register (wrnvcr) instruction allows the user to change the values of all the non volatile configuration register bits, described in table 3.: non-volatile configuration register . the write non volatile configuration register impacts the memory behavior only after the next power on sequence. figure 38. write nv configuratio n register instruction sequence 9.1.31 read volatile configuration register the read volatile configuration register (rdvcr) instruction a llows the volatile configuration register to be read. see table 5.: volatile configuration register . figure 39. read volatile configuration register instruction sequence c dq0 s dq1 2 1 3456789101112131415 high impedance instruction nvcr in 0 765432 0 1 ls byte 15 14 13 12 16 17 18 19 20 byte byte ms byte 11 10 9 8 21 22 23 24 c dq0 s 2 1 3456789101112131415 instruction 0 dq1 7 6543210 volatile configuration register out high impedance msb 7 6543210 msb 7 volatile configuration register out
n25q032 - 3 v instructions 85/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. 9.1.32 write volatile configuration register the write volatile configuration register (w rvcr) instruction allows new values to be written to the volatile config uration register. before it can be accepted, a write enable (wren) instruction must have been executed . after the write enable (wren) instruction has been decoded and executed, the device sets the write enable latch (wel). the write volatile configuration register (wrv cr) instruction is entered by driving chip select (s ) low, followed by the instruction code and the data byte on serial data input (dq0). chip select (s ) must be driven high after the eighth bit of the data byte has been latched in. if not, the write volatile c onfiguration register (wrvcr) instruction is not executed. when the new data are latched, the write enable latch (wel) is reset. the write volatile configuratio n register (wrvcr) instruction allows the user to change the values of all the volatile configuration register bits, described in table 5.: volatile configuration register . the write volatile configuration register impacts the memory behavior right after the instruction is receiv ed by the device. figure 40. write volatile configuration register instruction sequence 9.1.33 read volatile enha nced configuration register the read volatile enhanced configuration register (rdvecr) in struction allows the volatile configuration register to be read. c dq0 s dq1 2 1 3456789101112131415 high impedance instruction volatile configuration register in 0 765432 0 1 msb
instructions n25q032 - 3 v 86/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. figure 41. read volatile enhanced configuration register instruction sequence 9.1.34 write volatile enha nced configuration register the write volatile enhanced configuration r egister (wrvecr) instruction allows new values to be written to the volatile enhanced configuration register. before it can be accepted, a write enable (wren) instruction must previously ha ve been executed. after the write enable (wren) instructio n has been decoded and executed, the device sets the write enable latch (wel). the write volatile enhanced configuration regi ster (wrvecr) instru ction is entered by driving chip select (s ) low, followed by the instruction code and the data byte on serial data input (dq0). chip select (s ) must be driven high after the eighth bit of the data byte has been latched in. if not, the write volatile enhanced configur ation register (wrvecr) instruction is not executed. when the new data are latched, the write enable latch (wel) is reset. the write volatile enhanced configuration regist er (wrvecr) instruction allows the user to change the values of all the volatile enhanc ed configuration register bits, described in table 7.: volatile enhanced configuration register . the write volatile enhanced configuration regi ster impacts the memory behavior right after the instruction is rece ived by the device. c dq0 s 2 1 3456789101112131415 instruction 0 dq1 7 6543210 volatile enhanced configuration register out high impedance msb 7 6543210 msb 7 volatile enhanced configuration register out
n25q032 - 3 v instructions 87/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. figure 42. write volatile enhanced configuration register instruction sequence 9.2 dio-spi instructions in dio-spi protocol, instructions, addresses and input/output data alwa ys run in parallel on two wires: dq0 and dq1. in the case of a dual command fast read (dcfr), read otp (rotp), read lock registers (rdlr), read status register (rdsr) , read flag status register (rfsr), read nv configuration register (r dnvcr), read volatile config uration register (rdvcr), read volatile enhanced configuration regist er (rdvecr), read serial flash discovery parameter (rdsfdp), and multiple i/o read identification (miordid ) instruction, the shifted-in instruction sequence is followe d by a data-out sequence. chip select (s ) can be driven high after any bit of the data-out sequence is being shifted out. in the case of a dual command page program (dcpp), program otp (potp), subsector erase (sse), sector erase (se), bulk erase (be), program/erase suspend (pes), program/erase resume (per), write status register (wrsr), clear flag status register (clfsr), write to lock register (wrlr), write volatile conf iguration register (wrvcr), write volatile enhanced configuration re gister (wrvecr), write nv configuration register (wrnvcr), write enable (wren) or write disable (wrdi) instruction, chip select (s ) must be driven high exactly at a byte boundary, otherwise the instruction is rejected, and is not executed. all attempts to access the memory array during a write status register cycle, a write non volatile configuration register, a program cycle, or an erase cycle are ignored. the internal write status register cycle, write non volatile configuration register, program cycle, or erase cycle continues unaffected. the excepti on is the program/erase suspend instruction (pes), that can be used to pause all the program and erase cycles, except for the program otp (potp), the write status register, the bulk erase (be), and the write non volatile configuration register. the suspended program or erase cycle can be resumed by mean of the program/erase resume instruction (per). during the program/ erase cycles also the polling instructions (to check if the internal modify cycle is finished by mean of the wip bit of the status register or of the program/erase controller bit of the flag status register) are also accepted to allow the application checking the end of the internal modify cycl es, of course these polling instructions don't affect the internal cycles performing. c dq0 s dq1 2 1 3456789101112131415 high impedance instruction vecr in 0 765432 0 1 msb
instructions n25q032 - 3 v 88/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. 1) the number of dummy clock cycles is configurable by the user table 21. instruction set: dio-spi protocol instruction description one-byte instruction code (bin) one-byte instruction code (hex) address bytes dummy clock cycle data bytes miordid multiple i/o read identification 1010 1111 afh 0 0 1 to 3 rdsfdp read serial flash discovery parameter 01011010 5ah 3 8 (1) 1 to dcfr dual command fast read 0000 1011 0bh 3 8 (1) 1 to 0011 1011 3bh 3 8 (1) 1 to 1011 1011 bbh 3 8 (1) 1 to rotp read otp 0100 1011 4bh 3 8 (1) 1 to 65 wren write enable 0000 0110 06h 0 0 0 wrdi write disable 0000 0100 04h 0 0 0 dcpp dual command page program 0000 0010 02h 3 0 1 to 256 1010 0010 a2h 3 0 1 to 256 1101 0010 d2h 3 0 1 to 256 potp program otp 0100 0010 42h 3 0 1 to 65 sse subsector erase 0010 0000 20h 3 0 0 se sector erase 1101 1000 d8h 3 0 0 be bulk erase 1100 0111 c7h 0 0 0 per program/erase resume 0111 1010 7ah 0 0 0 pes program/erase suspend 0111 0101 75h 0 0 0 rdsr read status register 0000 0101 05h 0 0 1 to wrsr write status register 0000 0001 01h 0 0 1 rdlr read lock register 1110 1000 e8h 3 0 1 to wrlr write to lock register 1110 0101 e5h 3 0 1 rfsr read flag status register 0111 0000 70h 0 0 1 to clfsr clear flag status register 0101 0000 50h 0 0 0 rdnvcr read nv configuration register 1011 0101 b5h 0 0 2 wrnvcr write nv configuration register 1011 0001 b1h 0 0 2 rdvcr read volatile configuration register 1000 0101 85h 0 0 1 to wrvcr write volatile configuration register 1000 0001 81h 0 0 1 rdvecr read volatile enhanced configuration register 0110 0101 65h 0 0 1 to wrvecr write volatile enhanced configuration register 0110 0001 61h 0 0 1
n25q032 - 3 v instructions 89/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. 9.2.1 multiple i/o read identification protocol the multiple input/output read identification (miordid) instructi on allows to read the device identification data in the dio-spi protocol: ? manufacturer identification (1 byte) ? device identification (2 bytes) unlike the rdid instruction of the extended spi protocol, the multiple input/output instruction can not read the unique id code (uid) (17 bytes). for further details on the manufacturer and device identification codes please refer to section 9.1.1: read identification (rdid) . any multiple input/output read identification (miordid) instructi on while an erase or program cycle is in progress, is not decoded, and has no effect on the cycle that is in progress. the device is first selected by driving chip select (s ) low. then, the 8-bit instruction code for the instruction is shifted in parallel on the 2 pins dq0 and dq1. after this, the 24-bit device identification, stored in the memory , will be shifted out on again in parallel on dq1 and dq0. each two bits are shifted out during the falling edge of serial clock (c). the read identification (rdid) instruction is terminated by driving chip select (s ) high at any time during data output. when chip select (s ) is driven high, the device is put in the standby powe r mode. once in the standby power mode, the device waits to be selected, so that it can receive, decode and execute instructions. figure 43. multiple i/o read identification instruction and data-out sequence dio- spi 9.2.2 read serial fl ash discovery parameter the read serial flash discovery parameter (rds fdp) instruction allows reading the serial flash discovery parameter area (sfdp) in the dio-spi protocol. the instruction functionality is exactly the same as the read serial flash discovery parameter instruction of the extended spi protocol; the only difference is that in the dio-spi protocol instruction code, address and output data are all parallelized on the two pins dq0 and dq1. s 2 1345678 0 c 910 11 12 13 14 15 afh man. code dev. code size code 6420 7531 dq0 dq1 6420 7531 6420 7531
instructions n25q032 - 3 v 90/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. note: the dummy bits can not be parallelized sinc e these clock cycles are requested to perform the internal reading operation. figure 44. dual read serial flash discovery parameter *address bits a[23:11] are ?don?t care.? 9.2.3 dual command fast read (dcfr) the dual command fast read ( dcfr) instruction allows to read the memory in dio-spi protocol, parallelizing the instruction code, the address and the output data on two pins (dq0 and dq1). the dual command fast read (dcfr) instruction can be issued, when the device is set in dio-spi mode, by sending to the memory indifferently one of the 3 instructions codes: 0bh, 3bh or bbh, the effect is exactly the same. the 3 instruction codes are all accepted to help the application code po rting from extended spi protocol to dio-spi protocol. apart for the parallelizing on two pins of the instruction code, the dual command fast read instruction functionality is exactly the same as the dual i/o fast read of the extended spi protocol. figure 45. dual command fast read instruction and data-out sequence dio-spi *address bits a23 and a22 are ?don?t care.? instruction *24-bit address dq0 dq1 s c 22 20 18 16 23 21 19 17 14 12 10 8 15 13 11 9 6420 7531 msb msb 75 1 3 64 0 2 data out 1 64 0 2 data out n 75 1 3 12 13 14 15 2 1 34567 8 9 10 11 0 16 17 18 19 20 21 22 23 24 25 26 27 28 dummy cycles the dummy clock cycle depends on the dummy clock configuration in the nvcr/vcr register (default = 8). instruction *24-bit address dq0 dq1 s c 22 20 18 16 23 21 19 17 14 12 10 8 15 13 11 9 6420 7531 msb msb 75 1 3 64 0 2 data out 1 64 0 2 data out n 75 1 3 12 13 14 15 2 1 34567 8 9 10 11 0 16 17 18 19 20 21 22 23 24 25 26 27 28 dummy cycles
n25q032 - 3 v instructions 91/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. 9.2.4 read otp (rotp) the read otp (rotp) instruction is used to read the 64 bytes otp area in the dio-spi protocol. the instruction functionality is exactly the same as the read otp instruction of the extended spi protocol; the only difference is that in the dio-spi protocol instruction code, address and output data are all para llelized on the two pins dq0 and dq1. note: the dummy bits can not be parallelized sinc e these clock cycles are requested to perform the internal reading operation. figure 46. read otp instruction and data-out sequence dio-spi 9.2.5 write enable (wren) the write enable (wren) instruction se ts the write enable latch (wel) bit. except for the parallelizing of the instructio n code on the two pins dq0 and dq1, the instruction functionality is exactly the same as the write enable (wren) instruction of the extended spi protocol. figure 47. write enable instruction sequence dio-spi 9.2.6 write disable (wrdi) the write disable (wrdi) instruction rese ts the write enable latch (wel) bit. instruction 24-bit address dq0 dq1 s c 22 20 18 16 23 21 19 17 14 12 10 8 15 13 11 9 6420 7531 msb msb 75 1 3 64 0 2 data out 1 64 0 2 data out n 75 1 3 12 13 14 15 2 1 34567 8 9 10 11 0 16 17 18 19 20 21 22 23 24 25 26 27 28 dummy cycles c dq0 dq1 2 134 0 s instruction
instructions n25q032 - 3 v 92/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. except for the parallelizing of the instructio n code on the two pins dq0 and dq1, the instruction functionality is exactly the same as the write disable (wrdi) instruction of the extended spi protocol. figure 48. write disable instruction sequence dio-spi 9.2.7 dual command page program (dcpp) the dual command page program (dcpp) instruction allows to program the memory content in dio-spi protocol, parallelizing the instruction code, the address and the input data on two pins (dq0 and dq1). before it can be accepted, a write enable (wren) instruction must previously have been executed. the dual command page program (dcpp) instruction can be issued, when the de vice is set in dio-spi mode, by sending to the memory indifferently one of the 3 instruct ions codes: 02h, a2h or d2h, the effect is exactly the same. the 3 instruction codes are all accepted to help the application code porting from extended spi prot ocol to dio-spi protocol. apart for the parallelizing on two pins of the instruction code, the dual command page program instruction functionality is exactly th e same as the dual input extended fast program of the extended spi protocol. figure 49. dual command page program instruction sequence dio-spi, 02h *address bits a[23:22] are ?don?t care.? c dq0 dq1 2 134 0 instruction s instruction *24-bit address 12 13 14 15 dq0 dq1 s c 2 1 34567 8 9 10 11 0 22 20 18 16 23 21 19 17 14 12 10 8 15 13 11 9 6420 64 0 2 7531 75 1 3 16 17 18 19 75 1 3 64 0 2 data byte 2 64 0 2 data byte 256 75 1 3 20 21 22 23 data byte 1 1036 1037 1038 1039
n25q032 - 3 v instructions 93/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. figure 50. dual command page program instruction sequence dio-spi, a2h *address bits a[23:22] are ?don?t care.? figure 51. dual command page program instruction sequence dio-spi, d2h *address bits a[23:22] are ?don?t care.? 9.2.8 program otp instruction (potp) the program otp instruction (potp) is used to program at most 64 bytes to the otp memory area (by changing bits from 1 to 0, only). before it can be accepted, a write enable (wren) instruction must previously have been executed. except for parallelizing the instruction code, ad dress, and input data on pins dq0 and dq1, the instruction functionality and the locking otp method are the same as the program otp (potp) instruction of the extended spi protocol. instruction *24-bit address 12 13 14 15 dq0 dq1 s c 2 1 34567 8 9 10 11 0 22 20 18 16 23 21 19 17 14 12 10 8 15 13 11 9 6420 64 0 2 7531 75 1 3 16 17 18 19 75 1 3 64 0 2 data byte 2 64 0 2 data byte 256 75 1 3 20 21 22 23 data byte 1 1036 1037 1038 1039 instruction *24-bit address 12 13 14 15 dq0 dq1 s c 2 1 34567 8 9 10 11 0 22 20 18 16 23 21 19 17 14 12 10 8 15 13 11 9 6420 64 0 2 7531 75 1 3 16 17 18 19 75 1 3 64 0 2 data byte 2 64 0 2 data byte 256 75 1 3 20 21 22 23 data byte 1 1036 1037 1038 1039
instructions n25q032 - 3 v 94/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. figure 52. program otp instruction sequence dio-spi 9.2.9 subsector erase (sse) the subsector erase (sse) instruction sets to '1' (ffh) all bits inside the chosen subsector. before it can be accepted, a write enable (w ren) instruction must have been executed previously. except for parallelizing the instruction code and the address on pi ns dq0 and dq1, the instruction functionality is the same as th e subsector erase (sse) instruction of the extended spi protocol. figure 53. subsector erase instruction sequence dio-spi 9.2.10 sector erase (se) the sector erase (se) in struction sets to '1' (ffh) all bits inside the chosen sector. before it can be accepted, a write enable (wren) inst ruction must previously have been executed. except for parallelizing the instruction code an d the address on the two pins dq0 and dq1, the instruction functionality is the same as the sector erase (se) instruction of the extended spi protocol. instruction 24-bit address data byte 1 12 13 14 15 dq1 s c 2 1 34567 8 9 10 11 0 22 20 18 16 23 21 19 17 14 12 10 8 15 13 11 9 6420 64 0 2 7531 75 1 3 16 17 18 19 75 1 3 75 1 3 64 0 2 64 0 2 data byte 2 data byte n 20 21 22 23 24 25 26 27 dq0 instruction *24-bit address 12 13 14 15 dq0 dq1 c 2 1 34567 8 9 10 11 0 22 20 18 16 23 21 19 17 14 12 10 8 15 13 11 9 6420 7531 s
n25q032 - 3 v instructions 95/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. figure 54. sector erase instruction sequence dio-spi 9.2.11 bulk erase (be) the bulk erase (be) instruction sets all bits to '1' (ffh). before it can be accepted, a write enable (wren) instruction must previously have been executed. except for the parallelizing of the instructio n code on the two pins dq0 and dq1, the instruction functionality is exactly the same as the bulk erase (be) instruction of the extended spi protocol. figure 55. bulk erase instruction sequence dio-spi 9.2.12 program/erase suspend the program/erase suspend (pes) instruction allows the controller to interrupt a program or an erase instruction, in particular: subsec tor erase (sse), sector erase (se) and dual command page program (dcpp) can be suspended and resumed while bulk erase (be), write status register (wrsr), write non vola tile configuration register (wrnvcr), and program otp (potp) cannot be suspended. apart for the parallelizing of the instruction code on the two pins dq0 and dq1, the instruction functionalit y is exactly the same as t he program/erase suspend (pes) instruction of the extended spi protocol. instruction *24-bit address 12 13 14 15 dq0 dq1 c 2 1 34567 8 9 10 11 0 22 20 18 16 23 21 19 17 14 12 10 8 15 13 11 9 6420 7531 s c dq0 s 2 13 0 instruction dq1
instructions n25q032 - 3 v 96/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. figure 56. program/erase suspend instruction sequence dio-spi 9.2.13 program/erase resume after a program/erase suspend instruction, a program/erase resume instruction is required to continue performing the suspended program or erase sequence. except for the parallelizing of the instructio n code on the two pins dq0 and dq1, the instruction functionality is exactly the sa me as the program/erase resume (per) instruction of the extended spi protocol. figure 57. program/erase resume instruction sequence dio-spi 9.2.14 read status register (rdsr) the read status register (rdsr) instruction allows the status register to be read. except for the parallelizing of the instruction code and the output data on the two pins dq0 and dq1, the instruction functionality is exactly th e same as the read status register (rdsr) instruction of the extended spi protocol. c dq0 s dq1 2 134 0 instruction c dq0 dual_program_erase_resum e s dq1 2 134 0 instruction
n25q032 - 3 v instructions 97/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. figure 58. read status register instruction sequence dio-spi 9.2.15 write status register (wrsr) the write status register (wrsr) instruction allows new values to be written to the status register. before it can be accepted, a write ena ble (wren) instruction must previously have been executed. except for the parallelizing of the instruction code and the input data on the two pins dq0 and dq1, the instruction functionality and the protection feature management is exactly the same as the write status regi ster (wrsr) instruction of the extended spi protocol. figure 59. write status register instruction sequence dio-spi *address bits a[23:22] are ?don?t care.? 9.2.16 read lock register (rdlr) the read lock register instruction is us ed to read the lock register content. except for the parallelizing of the instruction code, the address and the output data on the two pins dq0 and dq1, the inst ruction functionality is exactly the same as the read lock register (rdlr) instruction of the extended spi protocol. status register out dq0 dq1 dual_read_sr instruction byte byte s c 2 1 34567 8 9 10 11 0 6420 7531 6420 7531 status register in dq0 dq1 instruction byte s c 2 1 34567 0 6420 7531
instructions n25q032 - 3 v 98/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. figure 60. read lock register instruction and data-out sequence dio-spi *address bits a23 and a22 are ?don?t care.? 9.2.17 write to lock register (wrlr) the write to lock register (wrlr) instruction allows bits to be changed in the lock registers. before it can be accepted, a write enable (wren) instruction must previously have been executed. except for the parallelizing of the instruction code, the address and the input data on the two pins dq0 and dq1, the instruction functionalit y is exactly the same as the write to lock register (wrlr) instruction of the extended spi protocol. figure 61. write to lock register instruction sequence dio-spi *address bits a23 and a22 are ?don?t care.? 9.2.18 read flag status register the read flag status register (rfsr) instruct ion allows the flag status register to be read. except for the parallelizing of the instruction co de and the output data on the two pins dq0 and dq1, the instruction functionality is exactly the same as the read flag status register (rfsr) instruction of the extended spi protocol. in st ruct i on 24-bi t ad d ress* lock regist er out 12 13 14 15 dq0 dq1 s c 2 1 34567 8 9 10 11 0 22 20 18 16 23 21 19 17 14 12 10 8 15 13 11 9 642064 0 2 753175 1 3 16 17 18 19 instruction *24-bit address lock regist er in 12 13 14 15 dq0 dq1 s c 2 1 34567 8 9 10 11 0 22 20 18 16 23 21 19 17 14 12 10 8 15 13 11 9 642064 0 2 753175 1 3 12 13 14 15
n25q032 - 3 v instructions 99/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. figure 62. read flag status register instruction sequence dio-spi 9.2.19 clear flag status register the clear flag status register (clfsr) instructio n reset the error flag status register bits (erase error bit, program error bit, vpp error bit, protection error bit). it is not necessary to set the wel bit before the clear flag status register instruction is executed. the wel bit will be unchanged after this command is executed. figure 63. clear flag status register instruction sequence dio-spi 9.2.20 read nv c onfiguration register the read non volatile configuration register (rdnvcr) instruction allows the non volatile configuration register to be read. flag status register out dq0 dq1 instruction byte byte s c 2 1 34567 8 9 10 11 0 6420 7531 6420 7531 dq0 dq1 instruction s c 2 13 0
instructions n25q032 - 3 v 100/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. figure 64. read nv configuration re gister instruction sequence dio-spi 9.2.21 write nv c onfiguration register the write non volatile configuration register (wrnvcr) instruction allows new values to be written to the non volatile configuration register. before it can be accepted, a write enable (wren) instruction must previously have been executed. except for the parallelizing of the instruction code and the input data on the two pins dq0 and dq1, the instruction functionality is ex actly the same as the write non volatile configuration register (w nvcr) instruction of the extended spi protocol. figure 65. write nv configuration register instruction sequence dio-spi 9.2.22 read volatile configuration register the read volatile configuration register (rdvcr) instruction a llows the volatile configuration register to be read. see table 5.: volatile configuration register . nvcr out ls byte ms byte dq0 dq1 instruction byte byte s c 2 1 34567 8 9 10 11 0 6420 7531 14 12 10 8 15 13 11 9 nvcr in ls byte ms byte dq0 dq1 instruction byte byte s c 2 1 34567 8 9 10 11 0 6420 7531 14 12 10 8 15 13 11 9
n25q032 - 3 v instructions 101/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. figure 66. read volatile configuration register instruction sequence dio-spi 9.2.23 write volatile configuration register the write volatile configuration register (w rvcr) instruction allows new values to be written to the volatile config uration register. before it can be accepted, a write enable (wren) instruction must have been executed previously. except for the parallelizing of the instruction code and the input data on the two pins dq0 and dq1, the instruction functionality is exactl y the same as the write volatile configuration register (wvcr) instruction of the extended spi protocol. figure 67. write volatile configurati on register instruction sequence dio-spi 9.2.24 read volatile enha nced configuration register the read volatile enhanced configuration register (rdvecr) in struction allows the volatile configuration register to be read. volatile configuration register out dq0 dq1 instruction byte byte s c 2 1 34567 8 9 10 11 0 6420 7531 6420 7531 volatile configuration register in dq0 dq1 instruction byte s c 2 1 34567 0 6420 7531
instructions n25q032 - 3 v 102/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. figure 68. read volatile enhanced configuration register instruction sequence dio-spi 9.2.25 write volatile enha nced configuration register the write volatile enhanced configuration r egister (wrvecr) instruction allows new values to be written to the volatile enhanced configuration register. before it can be accepted, a write enable (wren) instruction must previously have been executed. except for the parallelizing of the instruction code and the input data on the two pins dq0 and dq1, the instruction functionality is exactl y the same as the write volatile enhanced configuration register (wrvecr) instru ction of the extended spi protocol. figure 69. write volatile enhanced configuration register instruction sequence dio-spi volatile enhanced configuration register out dq0 dq1 instruction byte byte s c 2 1 34567 8 9 10 11 0 6420 7531 6420 7531 volatile enhanced configuration register in dq0 dq1 instruction byte s c 2 1 34567 0 6420 7531
n25q032 - 3 v instructions 103/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. 9.3 qio-spi instructions in qio-spi protocol, instructions, addresses and input/output data always run in parallel on four wires: dq0, dq1, dq2 and dq3 with the already mentioned exception of the modify instruction (erase and progra m) performed with the vpp=vpph. in the case of a quad command fast read (qcfr), read otp (rotp), read lock registers (rdlr), read status register (rdsr) , read flag status register (rfsr), read nv configuration register (r dnvcr), read volatile config uration register (rdvcr), read volatile enhanced configuration regist er (rdvecr), read serial flash discovery parameter (rdsfdp), and multiple i/o read identification (miordid ) instruction, the shifted-in instruction sequence is followe d by a data-out sequence. chip select (s ) can be driven high after any bit of the data-out sequence is being shifted out. in the case of a quad command page program (qcpp), program otp (potp), subsector erase (sse), sector erase (se), bulk erase (be), program/erase suspend (pes), program/erase resume (per), write status register (wrsr), clear flag status register (clfsr), write to lock register (wrlr), write volatile conf iguration register (wrvcr), write volatile enhanced configuration re gister (wrvecr), write nv configuration register (wrnvcr), write enable (wren) or write disable (wrdi) instruction, chip select (s ) must be driven high exactly at a byte boundary, otherwise the instruction is rejected, and is not executed. all attempts to access the memory array during a write status register cycle, a write non volatile configuration register, a program cycle or an erase cycle are ignored, and the internal write status register cycle, write non volatile configuration register, program cycle or erase cycle continues unaffected, the only exception is the program/erase suspend instruction (pes), that can be used to pause all t he program and the erase cycles but the program otp (potp), write status register (wrsr), bulk erase (be) and write non volatile configuration register. the suspended program or erase cycle can be resumed by mean of the program/erase resume instruction (per). during the program/erase cycles also the po lling instructions (to check if the internal modify cycle is finished by mean of the wip bit of the status register or of the program/erase controller bit of the flag status register) are also accepted to allow the application checking the end of the internal modify cycles, of course these polling instructions don't affect the internal cycles performing.
instructions n25q032 - 3 v 104/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. 1) the number of dummy clock cycles is configurable by the use r. table 22. instruction set: qio-spi protocol instruction description one-byte instruction code (bin) one-byte instruction code (hex) address bytes dummy clock cycle data bytes miordid multiple i/o read identification 1010 1111 afh 0 0 1 to 3 rdsfdp read serial flash discovery parameter 01011010 5ah 3 10 (1) 1 to qcfr quad command fast read 0000 1011 0bh 3 10 (1) 1 to 0110 1011 6bh 3 10 (1) 1 to 1110 1011 ebh 3 10 (1) 1 to rotp read otp (read of otp area) 0100 1011 4bh 3 10 (1) 1 to 65 wren write enable 0000 0110 06h 0 0 0 wrdi write disable 0000 0100 04h 0 0 0 qcpp quad command page program 0000 0010 02h 3 0 1 to 256 0011 0010 32h 3 0 1 to 256 0001 0010 12h 3 0 1 to 256 potp program otp (program of otp area) 0100 0010 42h 3 0 1 to 65 sse subsector erase 0010 0000 20h 3 0 0 se sector erase 1101 1000 d8h 3 0 0 be bulk erase 1100 0111 c7h 0 0 0 per program/erase resume 0111 1010 7ah 0 0 0 pes program/erase suspend 0111 0101 75h 0 0 0 rdsr read status register 0000 0101 05h 0 0 1 to wrsr write status register 0000 0001 01h 0 0 1 rdlr read lock register 1110 1000 e8h 3 0 1 to wrlr write to lock register 1110 0101 e5h 3 0 1 rfsr read flag status register 0111 0000 70h 0 0 1 to clfsr clear flag status register 0101 0000 50h 0 0 0 rdnvcr read nv configuration register 1011 0101 b5h 0 0 2 wrnvcr write nv configuration register 1011 0001 b1h 0 0 2 rdvcr read volatile configuration register 1000 0101 85h 0 0 1 to wrvcr write volatile configuration register 1000 0001 81h 0 0 1 rdvecr read volatile enhanced configuration register 0110 0101 65h 0 0 1 to wrvecr write volatile enhanced configuration register 0110 0001 61h 0 0 1
n25q032 - 3 v instructions 105/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. 9.3.1 multiple i/o read identification (miordid) the multiple input/output read identification (miordid) instructi on allows to read the device identification data in the qio-spi protocol: z manufacturer identification (1 byte) z device identification (2 bytes) unlike the rdid instruction of the extended spi protocol, the multiple input/output instruction can not read the unique id code (uid) (17 bytes). for further details on the manufacturer and device identification codes, see 9.1.1: read identification (rdid) . any multiple input/output read identification (miordid) instructi on while an erase or program cycle is in progress, is not decoded, and has no effect on the cycle that is in progress. the device is first selected by driving chip select (s ) low. then, the 8-bit instruction code for the instruction is shifted in parallel on the 4 pins dq0, dq1, dq2 and dq3. after this, the 24-bit device identification, stored in the memory, will be shif ted out on again in parallel on dq0, dq1, dq2 and dq3. the iden tification bits are shifted out 4 at a time during the falling edge of serial clock (c). the read identification (rdid) instruction is terminated by driving chip select (s ) high at any time during data output. when chip select (s ) is driven high, the device is put in the standby powe r mode. once in the standby power mode, the device waits to be selected, so that it can receive, decode and execute instructions. figure 70. multiple i/o read identification instruction and data-out sequence qio- spi s 2 1 345678 0 c 910 11 12 13 14 15 5151 51 6262 62 7373 73 dq0 4040 40 dq1 dq2 dq3 afh man. code dev. code size code
instructions n25q032 - 3 v 106/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. 9.3.2 read serial fl ash discovery parameter the read serial flash discovery parameter (rds fdp) instruction allows reading the serial flash discovery parameter area (sfdp) in the qio-spi protocol. the instruction functionality is exactly the same as the read serial flash discovery parameter instruction of the extended spi protocol. the only difference is that in the qio-spi protocol instruction code, address and output data are all paralle lized on the four pins dq0, dq1, dq2 and dq3. note: the dummy byte bits can not be parallelized: 10 clock cycles are requested to perform the internal reading operation at highest frequency (108mhz). figure 71. quad read serial flash discovery parameter *address bits a[23:11] are ?don?t care.? 9.3.3 quad command fast read (qcfr) the quad command fast read (qcfr) instructio n allows to read the memory in qio-spi protocol, parallelizing the instru ction code, the address and th e output data on four pins (dq0, dq1, dq2 and dq3). the quad command fast read (qcfr) instruction can be issued, after the device is set in qio-spi mode , by sending to the memory indifferently one of the 3 instructions codes: 0bh, 6bh or ebh, the effect is exactly the same. the 3 instruction codes are all accepted to help the application code porting from extended spi protocol to qio-spi protocol. apart for the parallelizing on four pins of the instruction code, the quad command fast read instruction functionality is exactly th e same as the quad i/ o fast read of the extended spi protocol. 2 1 345678 0 mode 3 mode 0 c dq0 s dq1 910 5151 40 0 4 51 1 5 73 3 7 dq3 7373 dq2 6262 62 2 6 byte 1 byte 2 dummy (ex.: 10) *24 bit address 4040 io switches from input to output instruction 20 16 12 8 40 21 17 13 9 51 22 18 14 10 62 23 19 15 11 73 15 16 17 18 20 19 21 23 22 24 byte 3 byte 4 25 26 27 4040 4040 4040 4040 byte 5 byte 6 the dummy clock cycle depends on the fast read configuration in the nvcr/vcr register (default = 8).
n25q032 - 3 v instructions 107/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. figure 72. quad command fast read instruction and data-out sequence qio-spi, 0bh *address bits a23 and a22 are ?don?t care.? figure 73. quad command fast read instruction and data-out sequence qio-spi, 6bh *address bits a23 and a22 are ?don?t care.? 2 1 345678 0 mode 3 mode 0 c dq0 s dq1 910 5151 40 0 4 51 1 5 73 3 7 dq3 7373 dq2 6262 62 2 6 byte 1 byte 2 dummy (ex.: 10) *24-bit address 4040 io switches from input to output instruction 20 16 12 8 40 21 17 13 9 51 22 18 14 10 62 23 19 15 11 73 15 16 17 18 20 19 21 23 22 24 byte 3 byte 4 25 26 27 4040 4040 4040 4040 byte 5 byte 6 2 1 345678 0 mode 3 mode 0 c dq0 s dq1 910 5151 40 0 4 51 1 5 73 3 7 dq3 7373 dq2 6262 62 2 6 byte 1 byte 2 dummy (ex.: 10) *24-bit address 4040 io switches from input to output instruction 20 16 12 8 40 21 17 13 9 51 22 18 14 10 62 23 19 15 11 73 15 16 17 18 20 19 21 23 22 24 byte 3 byte 4 25 26 27 4040 4040 4040 4040 byte 5 byte 6
instructions n25q032 - 3 v 108/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. figure 74. quad command fast read instruction and data-out sequence qio-spi, ebh *address bits a23 and a22 are ?don?t care.? 9.3.4 read otp (rotp) the read otp (rotp) instruction is used to read the 64 bytes ot p area in the qio-spi protocol. the instruction functionality is exactly the same as the read otp instruction of the extended spi protocol. the only difference is th at in the qio-spi prot ocol instruction code, address and output data are all parallelized on the four pins dq 0, dq1, dq2 and dq3. note: the dummy byte bits can not be parallelized: 10 clock cycles are requested to perform the internal reading operation at highest frequency (108mhz). 2 1 345678 0 mode 3 mode 0 c dq0 s dq1 910 5151 40 0 4 51 1 5 73 3 7 dq3 7373 dq2 6262 62 2 6 byte 1 byte 2 dummy (ex.: 10) *24-bit address 4040 io switches from input to output instruction 20 16 12 8 40 21 17 13 9 51 22 18 14 10 62 23 19 15 11 73 15 16 17 18 20 19 21 23 22 24 byte 3 byte 4 25 26 27 4040 4040 4040 4040 byte 5 byte 6
n25q032 - 3 v instructions 109/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. figure 75. read otp instruction and data-out sequence qio-spi 9.3.5 write enable (wren) the write enable (wren) instru ction sets the write enable latch (wel) bit. except for the parallelizing of the instruction code on th e four pins dq0, dq1, dq2 and dq3, the instruction functionality is exactly the same as the write enable instruction of the extended spi protocol. figure 76. write enable instruction sequence qio-spi dat a out 1 dat a out n 2 1 345678 0 c dq0 s dq1 910 51 40 0 4 51 1 5 73 3 7 dq3 73 dq2 62 62 2 6 dummy (ex.: 10) 40 instruction 20 16 12 8 40 21 17 13 9 51 22 18 14 10 62 23 19 15 11 73 15 16 17 18 20 19 21 23 22 c quad_writ e_enable 1 0 s instruction dq1 dq3 dq2 dq0
instructions n25q032 - 3 v 110/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. 9.3.6 write disable (wrdi) the write disable (wrdi) instruction rese ts the write enable latch (wel) bit. except for the parallelizing of the instruction code on the four pins dq0, dq1, dq2 and dq3, the instruction functionality is exac tly the same as the write disable (wrdi) instruction of the extended spi protocol. figure 77. write disable instruction sequence qio-spi 9.3.7 quad command page program (qcpp) the quad command page program (qcpp) instruction allows to program the memory content in dio-spi protocol, parallelizing the instruction code, the address and the input data on four pins (dq0, dq1, dq2 and dq3) . before it can be accepted, a write enable (wren) instruction must previously have been executed. the quad command page program (qcpp) instruction can be issued, when the device is set in qio-spi mode, by sending to the memory indifferently one of th e 3 instructions codes: 02h, 12h or 32h, the effect is exactly the same. the 3 instruction codes are all accepted to help the application code porting from extended spi protocol to qio-spi protocol. apart for the parallelizing on four pins of the instruction code, the quad command page program instruction functionality is exactly th e same as the quad input extended fast program of the extended spi protocol. c quad_writ e_disable 1 0 instruction dq1 dq3 dq2 dq0 s
n25q032 - 3 v instructions 111/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. figure 78. quad command page program instruction sequence qio-spi, 02h *address bits a[23:22] are ?don?t care.? figure 79. quad command page program instruction sequence qio-spi, 12h *address bits a[23:22] are ?don?t care.? 2 1 345678910 11 12 13 14 0 mode 3 mode 0 c dq0 dq1 15 517 514 515 516 519 518 5151 data in dq3 dq2 62 6 262 *24-bit address msb 40 20 16 12 8 21 17 13 9 22 18 14 10 23 19 15 11 40 4040 40 62 73 51 1 5 1 5 6 22 6 2 6 73 3 7 3 7 40 0 4 0 4 51 51 51 62 7373 73 73 msb msb msb msb msb data in 254 255 256 1 2 3 4 s 2 1 345678910 11 12 13 14 0 mode 3 mode 0 c dq0 dq1 15 5151 data in dq3 dq2 62 6 262 *24-bit address msb 40 20 16 12 8 21 17 13 9 22 18 14 10 23 19 15 11 40 4040 40 62 73 51 1 5 1 5 6 22 6 2 6 73 3 7 3 7 40 0 4 0 4 51 51 51 62 7373 73 73 msb msb msb msb msb data in 254 255 256 1 2 3 4 517 514 515 516 519 518 s
instructions n25q032 - 3 v 112/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. figure 80. quad command page program instruction sequence qio-spi, 32h *address bits a[23:22] are ?don?t care.? 9.3.8 program otp instruction (potp) the program otp instruction (potp) is used to program at most 64 bytes to the otp memory area (by changing bits from 1 to 0, only). before it can be accepted, a write enable (wren) instruction must previously have been executed. except for the parallelizing of the instruction code, address and input data on the four pins dq0, dq1, dq2 and dq3, the in struction functionality (as we ll as the locking otp method) is exactly the same as the program otp (potp) instruction of the extended spi protocol. figure 81. program otp instruction sequence qio-spi 2 1 345678910 11 12 13 14 0 mode 3 mode 0 c dq0 dq1 15 5151 data in dq3 dq2 62 6 262 *24-bit address msb 40 20 16 12 8 21 17 13 9 22 18 14 10 23 19 15 11 40 4040 40 62 73 51 1 5 1 5 6 22 6 2 6 73 3 7 3 7 40 0 4 0 4 51 51 51 62 7373 73 73 msb msb msb msb msb data in 254 255 256 1 2 3 4 517 514 515 516 519 518 s instruction 24-bit address dq0 20 16 12 8 40 23 19 15 11 73 dq2 22 18 14 10 dq1 21 17 13 9 51 6 2 40 51 62 73 dq3 4040 5151 7373 6262 2 1 345678 0 c 910 11 12 13 14 s dat a byte1 dat a byte 2 dat a byte n
n25q032 - 3 v instructions 113/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. 9.3.9 subsector erase (sse) the subsector erase (sse) instruction sets to '1' (ffh) all bits inside the chosen subsector. before it can be accepted, a write enable (wren) instruction must previously have been executed. except for the parallelizing of the instruction code and the address on the four pins dq0, dq1, dq2 and dq3, the instruction functionalit y is exactly the same as the subsector erase (sse) instruction of the extended spi protocol. figure 82. subsector erase instruction sequence qio-spi *address bits a[23:22] are ?don?t care.? 9.3.10 sector erase (se) the sector erase (se) in struction sets to '1' (ffh) all bits inside the chosen sector. before it can be accepted, a write enable (wren) inst ruction must previously have been executed. except for the parallelizing of the instruction code and the address on the four pins dq0, dq1, dq2 and dq3, the instruction functionalit y is exactly the same as the sector erase (se) instruction of the extended spi protocol. c s instruction *24-bit address dq0 20 16 12 8 40 dq3 23 19 15 11 73 dq2 22 18 14 10 dq1 21 17 13 9 51 6 2 2 1 3456789 0
instructions n25q032 - 3 v 114/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. figure 83. sector erase instruction sequence qio-spi *address bits a[23:22] are ?don?t care.? 9.3.11 bulk erase (be) the bulk erase (be) instruction sets all bits to '1' (ffh). before it can be accepted, a write enable (wren) instruction must previously have been executed. except for parallelizing the inst ruction code on the four pins dq0, dq1, dq2 and dq3, the instruction functionality is exactly the same as the bulk erase (be) instruction of the extended spi protocol. figure 84. bulk erase instruction sequence qio-spi 9.3.12 program/erase suspend the program/erase suspend (pes) instruction allows the controller to interrupt a program or an erase instruction. in particular, subsec tor erase (sse), sector erase (se), and dual command page program (dcpp) can be suspended and resumed while bulk erase (be), c instruction *24-bit address dq0 20 16 12 8 40 dq3 23 19 15 11 73 dq2 22 18 14 10 dq1 21 17 13 9 51 6 2 2 1 3456789 0 s c s 1 0 instruction dq0 dq1 dq2 dq3
n25q032 - 3 v instructions 115/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. write status register (wrsr), write non vola tile configuration register (wrnvcr), and program otp (potp) cannot be suspended. except for parallelizing the instruction code on four pins (dq0, dq1, dq2, dq3) the instruction functionality is the same as the program/erase sus pend (pes) instru ction of the extended spi protocol. figure 85. program/erase suspend instruction sequence qio-spi 9.3.13 program/erase resume after a program/erase suspend instruction, a program/erase resume instruction is required to continue performing the suspended program or erase sequence. except for parallelizing the instruction co de on four pins (dq0, dq1, dq2, dq3) the instruction functionality is the same as the program/erase resume (per) instruction of the extended spi protocol. instruction s c 1 0 dq3 dq0 dq2 dq1
instructions n25q032 - 3 v 116/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. figure 86. program/erase resume instruction sequence qio-spi 9.3.14 read status register (rdsr) the read status register (rdsr) instruction allows the status register to be read. except for the parallelizing of the instruction code and the output data on the four pins dq0, dq1, dq2 and dq3, the instruction fu nctionality is exactly the same as the read status register (rdsr) instruction of the extended spi protocol. figure 87. read status register instruction sequence qio-spi instruction s c 1 0 dq3 dq0 dq2 dq1 c s 2 1 3 4 5 6 7 8 9 10 11 12 13 14 15 status register out 0 dq0 dq1 dq3 dq2 instruction 4040 40 5151 51 6262 62 7373 73 40 0 4 51 1 5 73 3 7 62 2 6 4040 5151 6262 7373 40 51 62 73 16 17 18
n25q032 - 3 v instructions 117/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. 9.3.15 write status register (wrsr) the write status register (wrsr) instruction allows new values to be written to the status register. before it can be accepted, a write ena ble (wren) instruction must previously have been executed. the instruction code and the input data are sent on four pins dq0, dq1, dq2 and dq3. the instruction functionality is exac tly the same as the write status register (wrsr) instruction of the extended spi protocol. however, the pr otection feature management is different. in particular, once srwd bit is set to '1' the device enters in the hardware protected mode (hpm) independently from write protect (w/vpp) signal value. to exit the hpm mode is needed to switch temporarily to the extended spi protocol. figure 88. write status register instruction sequence qio-spi 9.3.16 read lock register (rdlr) the read lock register instruction is used to read the lock register content. apart from parallelizing the instruction code , the address, and the output data on four pins (dq0, dq1, dq2, dq3) the instruction func tionality is the same as th e read lock register (rdlr) instruction of the extended spi protocol. status register in c s 2 13 0 40 51 62 73 dq2 dq0 dq3 dq1
instructions n25q032 - 3 v 118/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. figure 89. read lock register instruction and data-out sequence qio-spi *address bits a23 and a22 are ?don?t care.? 9.3.17 write to lock register (wrlr) the write to lock register (wrlr) instruction allows bits to be changed in the lock registers. before it can be accepted, a write enable (wren) instruction must previously have been executed. except for the parallelizing of the instruction code, the address and the input data on the four pins dq0, dq1, dq2 and dq3, the instruct ion functionality is exactly the same as the write to lock register (wrlr) instruction of the extended spi protocol. c s 2 1 3 4 5 6 7 8 9 10 11 12 13 14 15 lock regist er out 0 dq0 dq1 dq3 dq2 instruction 20 16 12 8 40 21 17 13 9 51 22 18 14 10 62 23 19 15 11 73 5151 40 0 4 51 1 5 73 3 7 7373 6262 62 2 6 4040 *24-bit address
n25q032 - 3 v instructions 119/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. figure 90. write to lock register instruction sequence qio-spi *address bits a23 and a22 are ?don?t care.? 9.3.18 read flag status register the read flag status register (rfsr) instruct ion allows the flag status register to be read. except for the parallelizing of th e instruction code and the output data on the four pins dq0, dq1, dq2 and dq3, the instruction functionality is exactly the same as the read flag status register (rfsr) instruction of the extended spi protocol. c s instruction *24-bit address lock regist er in dq0 20 16 12 8 40 dq3 23 19 15 11 73 dq2 22 18 14 10 dq1 21 17 13 9 51 6 2 40 51 62 73 2 1 3456789 0
instructions n25q032 - 3 v 120/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. figure 91. read flag status register instruction sequence qio-spi 9.3.19 clear flag status register the clear flag status register (clfsr) instructio n reset the error flag status register bits (erase error bit, program error bit, vpp error bit, protection error bit). it is not necessary to set the wel bit before the clear flag status register instruction is executed. the wel bit will be unchanged after this command is executed. figure 92. clear flag status register instruction sequence qio-spi 9.3.20 read nv c onfiguration register the read non volatile configuration register (rdnvcr) instruction allows the non volatile configuration register to be read. s 2 1 345678 0 mode 3 mode 0 c dq0 dq1 910 dq3 dq2 instruction 4040 40 5151 51 6262 62 7373 73 11 12 13 14 15 5151 40 0 4 51 1 5 73 3 7 7373 6262 62 2 6 4040 flag status register out c 1 0 s instruction dq3 dq1 dq2 dq0
n25q032 - 3 v instructions 121/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. figure 93. read nv configuration re gister instruction sequence qio-spi 9.3.21 write nv c onfiguration register the write non volatile configuration register (wrnvcr) instruction allows new values to be written to the non volatile configuration register. before it can be accepted, a write enable (wren) instruction must previously have been executed. except for the parallelizing of the instruction co de and the input data on the four pins dq0, dq1, dq2 and dq3, the instruction functiona lity is exactly the same as the write non volatile configuration register (wrnvcr) instruction of the extended spi protocol. c s 2 1 345 instruction 0 ls byte ms byte dq0 dq1 dq3 4 0 12 8 5 1 13 9 6 2 14 10 7 3 15 11 dq2 nonvolatile configuration register out
instructions n25q032 - 3 v 122/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. figure 94. write nv configuration register instruction sequence qio-spi 9.3.22 read volatile configuration register the read volatile configuration register (rdvcr) instruction a llows the volatile configuration register to be read. c s 2 1345 instruction nonvolatile configuration register in 0 ls byte ms byte dq0 dq1 dq3 dq2 4 0 12 8 5 1 13 9 6 2 14 10 7 3 15 11
n25q032 - 3 v instructions 123/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. figure 95. read volatile configuration register instruction sequence qio-spi 9.3.23 write volatile configuration register the write volatile configuration register (w rvcr) instruction allows new values to be written to the volatile config uration register. before it can be accepted, a write enable (wren) instruction must previously have been executed. except for the parallelizing of the instruction co de and the input data on the four pins dq0, dq1, dq2 and dq3, the instruction functionality is exactly the same as the write volatile configuration register (w rvcr) instruction of the extended spi protocol. c s 2 1 3 4 5 6 7 8 9 10 11 12 13 14 15 volatile configuration register out 0 dq0 dq1 dq3 dq2 instruction 4040 40 5151 51 6262 62 7373 73 5151 40 0 4 51 1 5 73 3 7 7373 6262 62 2 6 4040
instructions n25q032 - 3 v 124/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. figure 96. write volatile configuration register instruction sequence qio-spi 9.3.24 read volatile enha nced configuration register the read volatile enhanced configuration register (rdvecr) in struction allows the volatile configuration register to be read. figure 97. read volatile enhanced configuration register instruction sequence qio-spi volatile configuration register in c s 2 13 0 40 51 62 73 dq0 dq1 dq3 dq2 c s 2 1 3 4 5 6 7 8 9 10 11 12 13 14 15 volatile enhanced configuration register out 0 dq0 dq1 dq3 dq2 instruction 4040 40 5151 51 6262 62 7373 73 5151 40 0 4 51 1 5 73 3 7 7373 6262 62 2 6 4040
n25q032 - 3 v instructions 125/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. 9.3.25 write volatile enha nced configuration register the write volatile enhanced configuration r egister (wrvecr) instruction allows new values to be written to the volatile enhanced configuration register. before it can be accepted, a write enable (wren) instruction must previously have been executed. except for the parallelizing of the instruction co de and the input data on the four pins dq0, dq1, dq2 and dq3, the instruction functionality is exactly the same as the write volatile enhanced configuration register (wrvecr) instruction of the extended spi protocol. figure 98. write volatile enhanced configuration register instruction sequence qio-spi c s 2 13 volatile enhanced configuration register in 0 dq0 dq1 dq3 dq2 instruction 40 51 62 73
xip operations n25q032 - 3 v 126/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. 10 xip operations xip (execution in place) mode is availabl e in each protocol: extended spi, dio-spi, and qio-spi. xip mode allows the memory to be read simply by sending an address to the device and then receiving the data on one, two, or four pins in parallel, depending on the customer requirements. it offe rs maximum flexibility to the ap plication, save s instruction overhead, and allows a dramatic reduction to the random access time. you can enable xip mode in two ways: z using the volatile configuratio n register: this is dedicated to applications that boot in spi mode (extended spi, dio-spi or qio-spi) and then during the application life need to switch to xip mode to direct ly execute some code in the flash. z using the non volatile configuration register : this is dedicated to applications that need to boot directly in xip mode. setting to 0 the bit 3 of the volatile configuratio n register the device is ready to enter in xip mode right after the next fast read instruction (by 1, 2 or 4 pin). while acting on the non volatile configuration register (bit 11 to bit 9, depending on which xip type is required, single, dual or quad i/o) the memory enters in the selected xip mode only after the next power-on sequence. th e non volatile configuration register xip configuration bits allows the memory to start di rectly in the required xip mode (single, dual or quad) after the power on. the xip mode status must be confirmed forci ng the xip confirmation bit to "0", the xip confirmation bit is the value on the dq0 pin during the first dummy clock cycle after the address in xip reading instruction. forcing the bit "1" on dq0 during the first dummy clock cycle after the address (xip co nfirmation bit) the memory returns in the previous standard read mode, that means it will codi fy as an instructio n code the next byte received on the input pin(s) after the next chip select. instead , if the xip mode is confirmed (by forcing the xip confirmation bit to 0), after the device ne xt de-selection and selection cycle, the memory codify the first 3 bytes received on the inputs pin(s) as a new address. besides not confirming the xip mode during the firs t dummy clock cycle, it is possible to exit the xip mode by mean of a dedicated rescue sequence. note: for devices with a feature set digit equal to 2 or 4 in the part number (basic xip), it is not necessary to set the vola tile configuration register bit 3 to enter xip mode: it is possible to enter xip mode directly by setting xip conf irmation bit to 0 during the first dummy clock cycle after a fast read instruction.see section 16: ordering information .
n25q032 - 3 v xip operations 127/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. figure 99. n25q032 read functionality flow chart spi standard mode (no xip, vcr <3> = 1) spi mode (no xip) but ready to enter xip vcr<3> = 0 ? read instructions ? xip confirmation bit = 0 ? power on nvcr check is xip enabled ? xip mode xip confirmation bit = 0 ? yes yes no no yes yes yes no no no
xip operations n25q032 - 3 v 128/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. 10.1 enter xip mode by setting the non volatile configuration register to use the non volatile configur ation register method to enter in xip mode it is necessary to set the non volatile configuration register bits from 11 to 9 with the pattern corresponding to the required xip mode by mean of the write non volatile configuration register (wrnvcr) instruction. (see table 23.: nvcr xip bits setting example .) this instruction doesn't affect the xip state until the next power on sequence. in this case, after the next power on sequence, the memory directly accept addresses and then, after the dummy clock cycles (configurable), outputs the data as described in table 23.: nvcr xip bits setting example . for example to enable xip on qiof r in normal spi protocol with six dummy clock cycles the following pattern must be issued: table 23. nvcr xip bi ts setting example b1h (wrnvcr opcode) + 0110 100 111 x 1 11 xx 6 dummy cycles for fast read instructions xip set as default; quad i/o mode output buffer driver strength default don?t care hold/reset not disabled extended spi protocol don?t care
n25q032 - 3 v xip operations 129/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. figure 100. xip mode di rectly after power on 10.2 enter xip mode by setting the volatile configuration register to use the volatile configuration register method to enter xip mode, it is necessary to write a 0 to bit 3 of the volatile configuration regi ster to make the devi ce ready to enter xip mode (2). this instruction doesn't permit to en ter xip state directly: a fast read instruction (either single, dual or quad) is needed once to start the xip reading. after the fast read instruction (single, dual or quad) the xip confirmation bit must be set to 0. (first bit on dq0 during the first dumm y cycle after the address has been received), then after the next de-select and select cycle (s pin set to 1 and then to 0) the memory codify the first 3 bytes received on the input pin(s) directly as an address, without any instruction code, and after the dummy clock cycl es (configurable) directly outputs the data. for example to enable the xip (without ente r) with six dummy clock cycles, the pattern in table 24.: vcr xip bits setting example must be issued, and after that it is possible to enter, for example, in xip mode from extended spi re ad mode by mean of quad input output fast read instruction, as described in table 24.: vcr xip bits setting example . note: for devices with a feature set digit equal to 2 or 4 in the part number (basic xip), it is not necessary to set the volatile conf iguration register bit 3 to enter in xip mode: it is possible to enter directly in xip mode by setting xip confirmation bit to 1 during the first dummy clock cycle after a fast read instruction. see section 16: orderi ng information . vd nvcr check: xip enabled t vsi (<100) dq0 s 2 1 345678910 11 12 13 14 0 mode 3 mode 0 c 15 16 dq1 dq2 dq3 40 20 16 12 8 51 21 17 13 9 73 23 19 15 11 62 22 18 14 10 dummy (ex.: 6) *24-bit address 40 0 4 4 byte 1 51 1 5 5 73 3 7 7 6 22 6 6 byte 2 io switches from input to output xb xb is the xip confirmation bit and should be set as follows: 0 to keep xip state; 1 to exit xip mode and return to standard read mode. table 24. vcr xip bits setting example 81h (wrvcr opcode) + 0110 0 011 6 dummy cycles
xip operations n25q032 - 3 v 130/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. figure 101. xip: enter by vcr 2/2 (q iofr in normal spi protocol example) 10.3 xip mode hold and exit the xip mode does require at least one addition al clock cycle to allow the xip confirmation bit to be sent to the memory on dq0 during the first dummy clock cycle. the device decodes the xip confirmation bit with the scheme: z xip confirmation bit=0 means to hold xip mode z xip confirmation bit=1 means to exit xip mode and comes back to read mode, that means codifying the first by te after the next chip select as an instruction code. in dual i/o xip mode, the values of dq1 du ring the first dummy clock cycle after the addresses is always don't care. in quad i/o xip mode, the values of dq3, dq2 and dq1 during the first dummy clock cycle after the addresses are always don't care. in dual and single i/o xip m ode, in presence of the reset pin enabled (in devices with a dedicated part number), a low pulse on that pi n resets the xip protocol as defined by the volatile configuration register, reporting the memory at the state of last power up, as defined by the non volatile conf iguration register. in quad i/o xip modes, it is possible to reset the memory (for devices with a dedica ted part number) only when the device is deselected. see section 16: ordering information . ready for xip reserved table 24. vcr xip bits setting example 2 1 345678910 11 12 13 14 0 mode 3 mode 0 c dq0 s instruction 15 16 40 20 16 12 8 17 18 20 19 22 21 23 51 21 17 13 9 dq1 don?t care byte 1 73 23 19 15 11 62 22 18 14 10 dq2 don?t care 40 0 4 4 51 1 5 5 73 3 7 7 6 22 6 6 byte 2 dummy (ex.: 6) *24-bit address dq3 ?1? io switches from input to output xb xb is the xip confirmation bit and should be set as follows: 0 to keep xip state; 1 to exit xip mode and return to standard read mode.
n25q032 - 3 v xip operations 131/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. 10.4 xip memory reset after a controller reset if during the application life the system controlle r is reset during operation, and the device features the reset func tionality (in devices with a dedicat ed part number), and the feature has not been disabled, after the controller resets, the memory returns to por state and there is no issue. see section 16: ordering information . in all the other cases, it is possible to exit the memory from the xip mode by sending the following rescue sequence at the first chip selection after a system reset: dq0= '1' for: 7 clock cycles within s low (s becomes high before 8th clock cycle) + 13 clock cycles within s low (s becomes high before 14th clock cycle) + 25 clock cycles within s low (s becomes high before 26th clock cycle) the global effect is only to exit from xip without any other reset.
power-up and power-down n25q032 - 3 v 132/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. 11 power-up and power-down at power-up and power-down, the device must not be selected (that is chip select (s ) must follow the voltage applied on vcc) until vcc reaches the correct value: z vcc(min) at power-up z vss at power-down a safe configuratio n is provided in section 3: spi modes . to avoid data corruption and inadvertent write operations during power-up, a power on reset (por) circuit is included. the logic inside the device is held reset while vcc is less than the power on reset (por) threshold voltage, vwi - all operations are disabled, and the device does not respond to any instruction. during a standard power-up phase the device ignores all the instructions but rdsr and rfsr (they can be used to check the memory internal state according to figure 102.: power-up timing . after power-up, the device is in the following state: z the device is in the standby power mode z the write enable latch (wel) bit is reset z the write in progress (wip) bit is reset z the lock registers are configured as: (wri te lock bit, lock do wn bit) = (0,0). normal precautions must be taken for supply line decoupling, to st abilize the vcc supply. each device in a system should have the v cc line decoupled by a suitable capacitor close to the package pins (generally, this ca pacitor is of the order of 100 nf). at power-down, when vcc drops from the oper ating voltage, to below the power on reset (por) threshold voltage, vwi, all operations are disabled and the device does not respond to any instruction (the designer needs to be aware that if power-down occurs while a program or erase cycle is in progress , some data corruption may result). vpph must be applied only when vcc is stable and in the vcc(min) to vcc(max) voltage range. figure 102. power-up timing vcc tim e v cc (m ax) v cc (m in) v wi c h ip s e le c tio n n o t a llo w e d p ollin g allowed t vtw =t vtr d evice fu lly accessible spi protocol chip re s e t wip = 1 wel = 0 starting protocol defined by nvcr wip = 0 wel = 0
n25q032 - 3 v power-up and power-down 133/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. 11.1 rescue sequence in case of power loss during wrnvcr if a power loss occurs during a write non volat ile configuration register instruction, after the next power on the device could eventually wake up in a not determined state, for example a not required protocol or xip mode. in that case a particular rescue sequence must be used to recover the device at a fixed state (extended spi prot ocol without xip) until the next power up. then to fix the problem definitively is recommended to run the write non volatile configuration register again. the rescue sequence is composed of two parts that have to be run in the correct order. during all the sequence the tshsl must be 50ns at least. the sequence is: dq0 (pad data) equal to '1' for: 7 clock cycles within s low (s becomes high before 8th clock cycle) + 13 clock cycles within s low s becomes high before 14th clock cycle) + 25 clock cycles within s low (s becomes high before 26th clock cycle) to exit from xip. dq0 (pad data) and dq3 (pad hold) equal to '1' for: 8 clock cycles within s low (s becomes high before 9th clock cycle) to force normal spi protocol. table 25. power-up timing and v wi threshold symbol parameter min max unit t vtr (1) 1. these parameters are characterized only. v cc (min) to read 150 s t vtw (1) v cc (min) to device fu lly accessible 150 s v wi (1) write inhibit voltage 1.5 2.5 v
initial delivery state n25q032 - 3 v 134/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. 12 initial delivery state the device is delivered with the memory array erased: all bits are set to 1 (each byte contains ffh). the status register contai ns 00h (all status register bits are 0).
n25q032 - 3 v maximum rating 135/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. 13 maximum rating stressing the device outside the ratings liste d here may cause permanent damage to the device. these are stress ratings only, and operation of the device at these, or any other conditions outside those indicated in the operat ing sections of this specification, is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. table 26. absolute maximum ratings symbol parameter min max unit t stg storage temperature ?65 150 c t lead lead temperature during soldering see (1) 1. compliant with jedec std. j-std-020c (for small body, sn-pb or pb assembly), the numonyx ecopack? 7191395 specification, and the eur opean directive on restrictions on hazardous substances (rohs) 2002/95/eu. c v io input and output voltage (with respect to ground) ?0.6 v cc +0.6 v v cc supply voltage ?0.6 4.0 v vpp fast program/erase voltage ?0.2 10.0 v v esd electrostatic discharge voltage (human body model) (2) 2. jedec std jesd22-a114a (c1 = 100 pf, r1 = 1500 , r2 = 500 ). ?2000 2000 v
dc and ac parameters n25q032 - 3 v 136/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. 14 dc and ac parameters this section summarizes the operating and measurement conditions, and the dc and ac characteristics of the de vice. the parameters in the dc and ac characteristics tables that follow are derived from tests performed under the measurement conditions summarized in the relevant tables. designers should check th at the operating conditions in their circuit match the measurement conditions wh en relying on the quoted parameters. 1) output buffers are configurable by user. 2) for quad/dual operations: 0 to vcc. figure 103. ac measurement i/o waveform note: for 0.8vcc: for quad/d ual operations, this is v cc ; for 0.2vcc: for quad/dual operations, this is 0v table 27. operating conditions symbol parameter min typ max unit v cc supply voltage 2.7 3.6 v vpp h supply voltage on vpp 8.5 9.5 v t a ambient operating temperature ?40 85 c table 28. ac measurement conditions symbol parameter min max unit c l load capacitance 30 (1) pf input rise and fall times 5 ns input pulse voltages 0.2v cc to 0.8v cc (2) v input timing reference voltages 0.3v cc to 0.7v cc v output timing reference voltages v cc / 2 v ai07455 0.8v cc 0.2v cc 0.7v cc 0.3v cc input and output timing reference levels input levels 0.5v cc table 29. capacitance (1) 1. sampled only, not 100% tested, at t a =25 c and a frequency of 54 mhz. symbol parameter test condition min max unit c in/out input/output capacitance (dq0/dq1/dq2/dq3) v out = 0 v 8 pf c in input capacitance (other pins) v in = 0 v 6 pf
n25q032 - 3 v dc and ac parameters 137/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. note: the ac characteristi cs data is preliminary. table 30. dc characteristics symbol parameter test condition (in addiction to those in table 27.: operating conditions ) min max unit ili input leakage current 2 a ilo output leakage current 2 a icc1 standby current s = vcc, vin = vss or vcc 100 a icc3 operating current (fast read single i/o) c = 0.1vcc / 0.9vcc at 108 mhz, dq1 = open 15 ma c = 0.1vcc / 0.9vcc at 54 mhz, dq1 = open 6ma operating current (fast read dual i/o) c = 0.1vcc / 0.9vcc at 108 mhz 18 ma operating current (fast read quad i/o) c = 0.1vcc / 0.9vcc at 108 mhz 20 ma icc4 operating current (p age program single, dual and quad i/o) s = vcc 20 ma icc5 operating current (wrsr) s = vcc 20 ma icc6 operating current (se) s = vcc 20 ma vil input low voltage ? 0.5 0.3vcc v vih input high voltage 0.7vcc vcc+0.4 v vol output low voltage iol = 1.6 ma 0.4 v voh output high voltage ioh = ?100 ua vcc?0.2 v
dc and ac parameters n25q032 - 3 v 138/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. table 31. ac characteristics (page 1 of 2) symbol alt. parameter min typ (2) max unit fc fc clock frequency for the all the instructions (extended spi, dio-spi and qio-spi protocol) but the read instruction d.c. 108 mhz fr clock frequency for re ad instructions d.c. 54 mhz tch (1) tclh clock high time 4 ns tcl (2) tcll clock low time 4 ns tclch (3) clock rise time (4) (peak to peak) 0.1 v/ns tchcl (3) clock fall time (4) (peak to peak) 0.1 v/ns tslch tcss s active setup time (relative to c) 4 ns tchsl 4 ns tdvch tdsu data in setup time 2 ns tchdx tdh data in hold time 3 ns tchsh s active hold time (relative to c) 4 ns tshch s not active setup time (relative to c) 4 ns tshsl tcsh s deselect time after a correct read instruction 20 ns s deselect time after a not correct read or after any different instruction 50 ns tshqz (3) tdis output disable time 8 ns tclqv tv clock low to output valid under 30 pf 7 ns clock low to output valid under 10 pf 5 ns tclqx tho output hold time 1 ns thlch hold setup time (relative to c) 4 ns tchhh hold hold time (relative to c) 4 ns thhch hold setup time (relative to c) 4 ns tchhl hold hold time (relative to c) 4 ns thhqx (3) tlz hold to output low-z 8 ns thlqz (3) thz hold to output high-z 8 ns twhsl (5) write protect setup time 20 ns tshwl (5) write protect hold time 100 ns tvpphsl (6) enhanced program supply voltage high (vpph) to chip select low for single and dual i/o page program 200 ns tw write status regi ster cycle time 1.3 8 ms tcfsr clear flag status register cycle time 40 ns
n25q032 - 3 v dc and ac parameters 139/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. figure 104. reset ac waveforms while a program or erase cycle is in progress see table 32.: reset conditions . twnvcr write non volatile configuration register cycle time 0.2 3 s twvcr write volatile configuration register cycle time 40 ns twrvecr write volatile enhanced configurationregister cycle time 40 ns tpp (7) page program cycle time (256 bytes) 0.5 5 ms page program cycle time (n bytes) int(n/8) 0.015 (8) 5 page program cycle time vpp=vpph (256 bytes) 0.4 5 program otp cycle time (64 bytes) 0.2 ms tsse subsector erase cycle time 0.3 3 s tse sector erase cycle time 0.7 3 s sector erase cycle time vpp=vpph 0.6 3 tbe bulk erase cycle time 30 60 s bulk erase cycle time (with vpp=vpph) 25 60 s 1. tch + tcl must be greater than or equal to 1/ fc. 2. typical values given for ta = 25 c 3. value guaranteed by characterization, not 100% tested in production. 4. expressed as a slew-rate. 5. only applicable as a constraint for a wrsr instruction when srwd is set to '1'. 6. vpph should be kept at a valid level until the program or eras e operation has completed and its result (success or failure) is known. 7. when using the page program (pp) instruction to program consecutive bytes, optimized timings are obtained with one sequence including all the bytes versus seve ral sequences of only a few bytes (1 < n < 256). 8. int(a) corresponds to the upper integer part of a. for example int(12/8) = 2, int(32/8) = 4 int(15.3) =16. table 31. ac characteristics (page 2 of 2) symbol alt. parameter min typ (2) max unit re se t trlrh s trhsl tshrv
dc and ac parameters n25q032 - 3 v 140/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. figure 105. serial input timing table 32. reset conditions symbol alt. parameter conditions min typ max unit trlrh (1)(2) trst reset pulse width 50 ns trhsl (1) trec reset recovery time device selected (s low), while decoding any modify instruction, during all read operations, clfsr, wrdi, wren, wrlr, wrvcr, wrvecr. 40 ns under completion of an internal erase or program cycle related to potp, pp, diefp, difp, qiefp, qifp, se, be, per, pes. 30 s under completion of an sse operation. t sse ms under completion of an wrsr operation. t w ms under completion of an wrnvcr operation. t wnvcr ms device deselected (s high) and in xip mode. 40 ns device deselected (s high) and in standby mode. 40 ns tshrv (1) s# deselect to r valid deselect to r valid in quad output or in qio-spi. 2ns 1. all values are guaranteed by characteri zation and not 100% tested in production. 2. the device reset is possible but not guaranteed if trlrh < 50 ns. c dq0 ai13728 s msb in dq1 tdvch high impedance lsb in tslch tchdx tchcl tclch tshch tshsl tchsh tchsl
n25q032 - 3 v dc and ac parameters 141/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. figure 106. write protect setup and hol d timing during wrsr when srwd=1 figure 107. hold timing c dq0 s dq1 high impedance w/v pp twhsl tshwl ai07439c c dq1 ai13746 s dq0 hold tchhl thlch thhch tchhh thhqx thlqz
dc and ac parameters n25q032 - 3 v 142/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. figure 108. output timing figure 109. vpp h timing c dq1 ai13729 s lsb out dq0 addr. lsb in tshqz tch tcl tclqx tclqv tclqx tclqv s c dq0 v pp v pph ai13726-b tvpphsl end of command (identified by wip polling)
n25q032 - 3 v package mechanical 143/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. 15 package mechanical to meet environmental requirements, numonyx offers these devices in rohs compliant packages, which have a lead-free second leve l interconnect. the cate gory of second level interconnect is marked on the package and on the inner box label in compliance with jedec standard jesd97. maximum ratings related to soldering conditions are also marked on the inner box label. figure 110. ufdfpn8 (mlp8) ultra thin dual flat package, no lead, 43 mm drawing 1. drawing is not to scale. top view b e a d d 0.10 c d 0.10 c 2x 2x bottom view side view c d 0.05 c a f 0.10 c a1 seating plane 6 0.20 dia typ. a3 asme y14.5m - 1994 interpret dim and tol per third angle projection (nd-1) x e e n-1 n j 0.10 m c a b j 0.05 m c 3 6 (datum a) (datum b) see detail "a" 2 1 even terminal/side e datum a or b detail "a" terminal tip e/2 3 nx b 2 12 nx l e2 d2 d2 table 33. ufdfpn8 (mlp8) ultra thin dual flat package, no lead, 43 mm dimensions mm symbol aa1a3 d2 e2 e n nd b l d e typ 0.55 0.02 ? ? 0.80 0.20 0.80 8 4 0.30 0.60 4 3 min 0.45 0 0.127 0 0.70 0. 10 ? ? ? 0.25 0.55 3.90 2.90 max 0.60 0.05 0.15 12 0.90 0.30 ? ? ? 0.35 0.65 4.10 3.10
package mechanical n25q032 - 3 v 144/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. figure 111. vdfpn8 (mlp8) very thin pitch dual flat package, no lead, 65 mm drawing 1. drawing is not to scale. 2. the circle in the top view of the package indicates the position of pin 1. d e a2 a a3 a1 e1 d1 e e2 d2 l b r1 ddd bbb c cab aaa ca a b aaa cb m 0.10 ca 0.10 cb 2x table 34. vdfpn8 (mlp8) very thin dual flat package no leads 65 mm dimensions mm symbol aa1a2a3b dd1d2ee1e2 er1l qaaabbbddd typ 0.85 ? 0.65 0.20 0.40 6 5.75 3.40 5 4.75 4 1.27 0.10 0.60 ? ? ? ? min 0.80 0 ? ? 0.35 ? ? 3.20 ? ? 3.80 ? 0 0.50 ? ? ? ? max 1 0.05 ? ? 0.48 ? ? 3.60 ? ? 4.30 ? ? 0.75 12 0.15 0.10 0.05
n25q032 - 3 v package mechanical 145/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. figure 112. vdfpn8 (mlp8) very thin dual flat package 8 leads, 86x1 mm drawing 1. drawing is not to scale. 2. the circle in the top view of the package indicates the position of pin 1. c l c l d e a1 a 8x b (ne-1) x e l eee c a b fff c e aaa c aaa c b a 2x 2x 1 2 3 4 5 6 7 8 pin 1 id r 0.20 ddd c ?0,3 iso e d2 e2 // bbb c k m m table 35. vdfpn8 (mlp8) very thin dual flat package 8 leads 86x1 mm dimensions mm symbol aa1b dd2ee2 e k l typ 0.85 ? 0.4 8 5.16 6 4.8 1.27 (basic) ?0.5 min ? 0 0.35 ? ? ? ? 1.27 (basic) 0.2 0.45 max 1 0.05 0.48 ? ? ? ? 1.27 (basic) ?0.6
package mechanical n25q032 - 3 v 146/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. figure 113. so8w ? 8 lead plastic small outline, 208 mils body width, drawing 1. drawing is not to scale. e n cp b e a2 d c l a1 k e1 a 1 table 36. so8 wide ? 8 lead plastic small outline, 208 mils body width, dimensions mm symbol aa1a2b c d ee1 e k l typ 1.91 0.10 1.80 ? 0.20 5.28 5.28 7.90 1.27 4 0.64 min 1.78 0.05 1.70 0.36 0.1 55.085.087.70 ? 0 0.51 max 2.16 0.25 1.91 0.48 0.2 55.495.498.10 ? 8 0.80
n25q032 - 3 v package mechanical 147/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. figure 114. so16 wide ? 16 lead plastic small outline, 300 mils body width, drawing 1. drawing is not to scale. e 16 d c h 1 8 9 l a1 a ddd a2 b e h x 45? table 37. so16 wide ? 16 lead plastic small outline, 300 mils body width, dimensions mm symbol aa1b c d e e h h l ddd typ??????1.27????? min 2.35 0.10 0.33 0.23 10.10 7.40 ? 10 0.25 0.40 0 ? max 2.65 0.30 0.51 0.32 10.50 7.60 ? 10.65 0.75 1.27 8 0.10
package mechanical n25q032 - 3 v 148/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. figure 115. tbga - 6 x 8 mm, 24-ball, drawing 1. drawing is not to scale. ?
n25q032 - 3 v package mechanical 149/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. figure 116. so8n ? 8 lead plastic small outline, 150 mils body width, drawing 1. drawing is not to scale. table 38. tbga 6x8 mm 24-ball, dimensions, symbols a to ee mm symbol aa1a2 bdd1ee1edee typ ? 0.20 ? 0.35 5.90 ? 7.90 ? ? ? min ? ? 0.79 0.40 6.00 4 8 4 1 1 max 1.20 ? ? 0.45 6.10 ? 8.10 ? ? ? table 39. tbga 6x8 mm 24-ball, dimensions, symbols fd to fff mm symbol fd fe md me n aaa bbb ddd eee fff typ??5524 balls????? min1 2 5524 balls????? max ? ? 5 5 24 balls 0.15 0.10 0.10 0.15 0.08 e1 8 ccc b e a d c 1 e h x 45? a2 k 0.25 mm l l1 a1 gauge plane table 40. so8n ? 8 lead plastic small out line, 150 mils body width, dimensions mm symbol a a1 a2 b c ccc d e e1 e h k l l1 typ??????4.9063.901.27???1.04 min ? 0.10 1.25 0.28 0.17 ? 4.80 5.80 3.80 ? 0.25 0 0.40 ? max 1.75 0.25 ? 0.48 0.23 0.10 5 6.20 4 ? 0.50 8 1.27 ?
ordering information n25q032 - 3 v 150/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. 16 ordering information note: all packages are rohs compliant table 41. ordering information scheme example: n25q032 a 1 3 e f8 4 0 e device type n25q = serial flash memory, quad i/o, xip device density 032 = 032 mbit technology a = 65 nm feature set 1 = byte addressability, hold pin, numonyx xip 2 = byte addressability, hold pin, basic xip 3 = byte addressability, reset pin, numonyx xip 4 = byte addressability, reset pin, basic xip operating voltage 3 = vcc = 2.7 v to 3.6 v block structure e = uniform (no boot sectors) package f4 = ufdfpn8 4 x 3 mm (mlp8) f6 = vdfpn8 6 x 5 mm (mlp8) f8 = vdfpn8 8 x 6 mm (mlp8) sc = so8n (so8 narrow 150 mils body width) se = so8w (so8 wide 208 mils body width) sf = so16w (so16 wide 300 mils body width) 12 = tbga24 6 x 8 mm temperature and test flow 4 = industrial temperature range, ?40 to 85 c: device tested with standard test flow a = automotive temperature range, ?40 to 125 c; device tested with high reliability certified test flow h = industrial temperature range, ?40 to 85 c; device tested with high reliability certified test flow security features (1) 0 = no extra security packing options e = tray packing f = tape and reel packing g = tube packing 1. additional secure options are ava ilable upon request. for security featur es options please refer to an:309025
n25q032 - 3 v ordering information 151/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. note: for further information on line items not listed here or on any aspect of this device, please contact your nearest numonyx sales office. note: 1 applies to all part numbers: packing information details: e= tray, f= tape-n-reel, g= tube (16th digit of part number). table 42. valid order information line items part number features block structure package temperature and test flow security n25q032a13e1240e n25q032a13e1240f byte addressability, hold pin, numonyx xip uniform tbga24 6x8 mm industrial temp; standard test flow default n25q032a13ef640e n25q032a13ef640f byte addressability, hold pin, numonyx xip uniform vdfpn8 6 x 5 mm industrial temp; standard test flow default n25q032a13esc40f n25q032a13esc40g byte addressability, hold pin, numonyx xip uniform so8n industrial temp; standard test flow default n25q032a13ese40f n25q032a13ese40g byte addressability, hold pin, numonyx xip uniform so8w industrial temp; standard test flow default
revision history n25q032 - 3 v 152/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. 17 revision history table 43. document revision history date revision changes 10-may 2010 1 initial release. 14-jan-2011 2 revised package information.
m25q032 - 3 v 153/153 micron technology, inc., reserves the right to change products or specifications without notice. ?2010 micron technology, inc. all rights reserved. 8000 s. federal way, p.o. box 6, bo ise, id 83707-0006, tel: 208-368-3900 www.micron.com/productsupport cust omer comment line: 800-932-4992 micron and the micron logo are trademarks of micron technology, inc. all other trademarks are the propert y of their respective owners. this data sheet contains minimum and maximum limits sp ecified over the power supply and temperature range set forth herein. although considered final, these specif ications are subject to change, as further product development and data characterization sometimes occur.

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